Raman scattering from nonequilibrium molecular conduction junctions

Michael Galperin, Mark A Ratner, Abraham Nitzan

Research output: Contribution to journalArticle

39 Citations (Scopus)

Abstract

Raman scattering is a potentially important probe of structure, dynamics, and thermal properties of single-molecule conduction junctions. We combine a nonequilibrium Green's function description of the junction with a generalized scattering theory of the Raman process, which provides the first theoretical description of Raman scattering from such systems. The voltage dependence of the Raman flux shows a characteristic behavior at the conductance threshold resulting from (a) partial populations in the ground and excited molecular levels that give rise to two scattering pathways as well as interference between them and (b) junction heating that affects the Raman intensities. Comparing "effective temperatures" obtained from Raman scattering and heat balance serves to establish the integrity of this concept for nonequilibrium junctions.

Original languageEnglish
Pages (from-to)758-762
Number of pages5
JournalNano Letters
Volume9
Issue number2
DOIs
Publication statusPublished - Feb 11 2009

Fingerprint

Raman scattering
Raman spectra
conduction
Scattering
Green's function
heat balance
Thermodynamic properties
scattering
integrity
dynamic characteristics
Fluxes
Heating
Molecules
Green's functions
thermodynamic properties
Electric potential
interference
heating
thresholds
probes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanical Engineering

Cite this

Raman scattering from nonequilibrium molecular conduction junctions. / Galperin, Michael; Ratner, Mark A; Nitzan, Abraham.

In: Nano Letters, Vol. 9, No. 2, 11.02.2009, p. 758-762.

Research output: Contribution to journalArticle

Galperin, Michael ; Ratner, Mark A ; Nitzan, Abraham. / Raman scattering from nonequilibrium molecular conduction junctions. In: Nano Letters. 2009 ; Vol. 9, No. 2. pp. 758-762.
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