Raman studies of steric hindrance and surface relaxation of stepped H-terminated silicon surfaces

Melissa A. Hines, Yves J. Chabal, Timothy D. Harris, Alex Harris

Research output: Contribution to journalArticle

45 Citations (Scopus)

Abstract

Polarized angle-resolved Raman spectra of the Si-H stretching vibrations on stepped H-terminated Si(111) surfaces confirm the constrained orientation of the step dihydride derived from ab initio cluster calculations. They further show that the step normal modes involve little concerted motion of the step atoms, indicating that step relaxation reduces the steric interaction much further than predicted.

Original languageEnglish
Pages (from-to)2280-2283
Number of pages4
JournalPhysical Review Letters
Volume71
Issue number14
DOIs
Publication statusPublished - 1993

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silicon
dihydrides
Raman spectra
vibration
atoms
interactions

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Raman studies of steric hindrance and surface relaxation of stepped H-terminated silicon surfaces. / Hines, Melissa A.; Chabal, Yves J.; Harris, Timothy D.; Harris, Alex.

In: Physical Review Letters, Vol. 71, No. 14, 1993, p. 2280-2283.

Research output: Contribution to journalArticle

Hines, Melissa A. ; Chabal, Yves J. ; Harris, Timothy D. ; Harris, Alex. / Raman studies of steric hindrance and surface relaxation of stepped H-terminated silicon surfaces. In: Physical Review Letters. 1993 ; Vol. 71, No. 14. pp. 2280-2283.
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