Rapid thermal oxidation of silicon in N2O between 800 and 1200°C: Incorporated nitrogen and interfacial roughness

M. L. Green, D. Brasen, K. W. Evans-Lutterodt, L. C. Feldman, K. Krisch, W. Lennard, H. T. Tang, L. Manchanda, M. T. Tang

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128 Citations (Scopus)

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Physics & Astronomy