Rationally Designing High-Performance Bulk Thermoelectric Materials

Gangjian Tan, Li Dong Zhao, Mercouri G Kanatzidis

Research output: Contribution to journalReview article

395 Citations (Scopus)

Abstract

There has been a renaissance of interest in exploring highly efficient thermoelectric materials as a possible route to address the worldwide energy generation, utilization, and management. This review describes the recent advances in designing high-performance bulk thermoelectric materials. We begin with the fundamental stratagem of achieving the greatest thermoelectric figure of merit ZT of a given material by carrier concentration engineering, including Fermi level regulation and optimum carrier density stabilization. We proceed to discuss ways of maximizing ZT at a constant doping level, such as increase of band degeneracy (crystal structure symmetry, band convergence), enhancement of band effective mass (resonant levels, band flattening), improvement of carrier mobility (modulation doping, texturing), and decrease of lattice thermal conductivity (synergistic alloying, second-phase nanostructuring, mesostructuring, and all-length-scale hierarchical architectures). We then highlight the decoupling of the electron and phonon transport through coherent interface, matrix/precipitate electronic bands alignment, and compositionally alloyed nanostructures. Finally, recent discoveries of new compounds with intrinsically low thermal conductivity are summarized, where SnSe, BiCuSeO, MgAgSb, complex copper and bismuth chalcogenides, pnicogen-group chalcogenides with lone-pair electrons, and tetrahedrites are given particular emphasis. Future possible strategies for further enhancing ZT are considered at the end of this review.

Original languageEnglish
Pages (from-to)12123-12149
Number of pages27
JournalChemical Reviews
Volume116
Issue number19
DOIs
Publication statusPublished - Oct 12 2016

Fingerprint

Chalcogenides
Carrier concentration
Thermal conductivity
Doping (additives)
Bismuth
Electrons
Texturing
Carrier mobility
Crystal symmetry
Fermi level
Alloying
Precipitates
Copper
Nanostructures
Stabilization
Crystal structure
Modulation
Renaissance

ASJC Scopus subject areas

  • Chemistry(all)

Cite this

Rationally Designing High-Performance Bulk Thermoelectric Materials. / Tan, Gangjian; Zhao, Li Dong; Kanatzidis, Mercouri G.

In: Chemical Reviews, Vol. 116, No. 19, 12.10.2016, p. 12123-12149.

Research output: Contribution to journalReview article

Tan, Gangjian ; Zhao, Li Dong ; Kanatzidis, Mercouri G. / Rationally Designing High-Performance Bulk Thermoelectric Materials. In: Chemical Reviews. 2016 ; Vol. 116, No. 19. pp. 12123-12149.
@article{289f6bba56d14b2f9a0785c8ad6d205a,
title = "Rationally Designing High-Performance Bulk Thermoelectric Materials",
abstract = "There has been a renaissance of interest in exploring highly efficient thermoelectric materials as a possible route to address the worldwide energy generation, utilization, and management. This review describes the recent advances in designing high-performance bulk thermoelectric materials. We begin with the fundamental stratagem of achieving the greatest thermoelectric figure of merit ZT of a given material by carrier concentration engineering, including Fermi level regulation and optimum carrier density stabilization. We proceed to discuss ways of maximizing ZT at a constant doping level, such as increase of band degeneracy (crystal structure symmetry, band convergence), enhancement of band effective mass (resonant levels, band flattening), improvement of carrier mobility (modulation doping, texturing), and decrease of lattice thermal conductivity (synergistic alloying, second-phase nanostructuring, mesostructuring, and all-length-scale hierarchical architectures). We then highlight the decoupling of the electron and phonon transport through coherent interface, matrix/precipitate electronic bands alignment, and compositionally alloyed nanostructures. Finally, recent discoveries of new compounds with intrinsically low thermal conductivity are summarized, where SnSe, BiCuSeO, MgAgSb, complex copper and bismuth chalcogenides, pnicogen-group chalcogenides with lone-pair electrons, and tetrahedrites are given particular emphasis. Future possible strategies for further enhancing ZT are considered at the end of this review.",
author = "Gangjian Tan and Zhao, {Li Dong} and Kanatzidis, {Mercouri G}",
year = "2016",
month = "10",
day = "12",
doi = "10.1021/acs.chemrev.6b00255",
language = "English",
volume = "116",
pages = "12123--12149",
journal = "Chemical Reviews",
issn = "0009-2665",
publisher = "American Chemical Society",
number = "19",

}

TY - JOUR

T1 - Rationally Designing High-Performance Bulk Thermoelectric Materials

AU - Tan, Gangjian

AU - Zhao, Li Dong

AU - Kanatzidis, Mercouri G

PY - 2016/10/12

Y1 - 2016/10/12

N2 - There has been a renaissance of interest in exploring highly efficient thermoelectric materials as a possible route to address the worldwide energy generation, utilization, and management. This review describes the recent advances in designing high-performance bulk thermoelectric materials. We begin with the fundamental stratagem of achieving the greatest thermoelectric figure of merit ZT of a given material by carrier concentration engineering, including Fermi level regulation and optimum carrier density stabilization. We proceed to discuss ways of maximizing ZT at a constant doping level, such as increase of band degeneracy (crystal structure symmetry, band convergence), enhancement of band effective mass (resonant levels, band flattening), improvement of carrier mobility (modulation doping, texturing), and decrease of lattice thermal conductivity (synergistic alloying, second-phase nanostructuring, mesostructuring, and all-length-scale hierarchical architectures). We then highlight the decoupling of the electron and phonon transport through coherent interface, matrix/precipitate electronic bands alignment, and compositionally alloyed nanostructures. Finally, recent discoveries of new compounds with intrinsically low thermal conductivity are summarized, where SnSe, BiCuSeO, MgAgSb, complex copper and bismuth chalcogenides, pnicogen-group chalcogenides with lone-pair electrons, and tetrahedrites are given particular emphasis. Future possible strategies for further enhancing ZT are considered at the end of this review.

AB - There has been a renaissance of interest in exploring highly efficient thermoelectric materials as a possible route to address the worldwide energy generation, utilization, and management. This review describes the recent advances in designing high-performance bulk thermoelectric materials. We begin with the fundamental stratagem of achieving the greatest thermoelectric figure of merit ZT of a given material by carrier concentration engineering, including Fermi level regulation and optimum carrier density stabilization. We proceed to discuss ways of maximizing ZT at a constant doping level, such as increase of band degeneracy (crystal structure symmetry, band convergence), enhancement of band effective mass (resonant levels, band flattening), improvement of carrier mobility (modulation doping, texturing), and decrease of lattice thermal conductivity (synergistic alloying, second-phase nanostructuring, mesostructuring, and all-length-scale hierarchical architectures). We then highlight the decoupling of the electron and phonon transport through coherent interface, matrix/precipitate electronic bands alignment, and compositionally alloyed nanostructures. Finally, recent discoveries of new compounds with intrinsically low thermal conductivity are summarized, where SnSe, BiCuSeO, MgAgSb, complex copper and bismuth chalcogenides, pnicogen-group chalcogenides with lone-pair electrons, and tetrahedrites are given particular emphasis. Future possible strategies for further enhancing ZT are considered at the end of this review.

UR - http://www.scopus.com/inward/record.url?scp=84991628891&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84991628891&partnerID=8YFLogxK

U2 - 10.1021/acs.chemrev.6b00255

DO - 10.1021/acs.chemrev.6b00255

M3 - Review article

VL - 116

SP - 12123

EP - 12149

JO - Chemical Reviews

JF - Chemical Reviews

SN - 0009-2665

IS - 19

ER -