RE 5Co 4Si 14 (RE = Ho, Er, Tm, Yb)

Suicides grown from Ga flux showing exceptional resistance to chemical and thermal attack

James R. Salvador, Christos Malliakas, Jeff R. Gour, Mercouri G Kanatzidis

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

The compounds RE 5Co 4Si 14 (RE = Ho, Er, Tm, and Yb) have been synthesized from a Ga flux and characterized by X-ray diffraction. They can also be made by direct combination of the elements with arc melt alloying. All crystallize in the Lu 5Co 4Si 14 structure type in the monoclinic space group P2 1/c with lattice parameters: a = 12.3765(15) Å, b = 7.8142(9) Å, c = 7.7330(9) Å, β= 98.867(2)°; a = 12.337(2) Å, b = 7.7990(14) Å, c = 7.7144(15) Å, β= 98.85(3)°; a = 12.3140(16) Å, b = 7.778(1) Å, c = 7.705(1) Å, β= 98.815(2)°; and a = 12.255(3) Å, b = 7.7537(16) Å, c = 7.6730(15) Å, β= 98.95(3)° for Ho 5Co 4Si 14, Er 5Co 4Si 14, Tm 5Co 4Si 14, and Yb 5Co 4Si 14, respectively. The compounds are composed of a dense Si/Co framework that is assembled from [Co 4Si 10] slabs and [Si 4] zigzag chains. Crystals of the title compounds proved to be remarkably resistant to thermal oxidative attack (up to 1000° C) as well as chemical attack from concentrated mineral acids and bases. The origin of this behavior can be traced to the details of the crystal structure and the Si-rich nature of the crystal framework.

Original languageEnglish
Pages (from-to)1636-1645
Number of pages10
JournalChemistry of Materials
Volume17
Issue number7
DOIs
Publication statusPublished - Apr 5 2005

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Fluxes
Chemical attack
Crystals
Alloying
Lattice constants
Minerals
Crystal structure
X ray diffraction
Acids
Hot Temperature

ASJC Scopus subject areas

  • Materials Chemistry
  • Materials Science(all)

Cite this

RE 5Co 4Si 14 (RE = Ho, Er, Tm, Yb) : Suicides grown from Ga flux showing exceptional resistance to chemical and thermal attack. / Salvador, James R.; Malliakas, Christos; Gour, Jeff R.; Kanatzidis, Mercouri G.

In: Chemistry of Materials, Vol. 17, No. 7, 05.04.2005, p. 1636-1645.

Research output: Contribution to journalArticle

@article{3d056cb4c6aa433b8cebcac8f5d4d62d,
title = "RE 5Co 4Si 14 (RE = Ho, Er, Tm, Yb): Suicides grown from Ga flux showing exceptional resistance to chemical and thermal attack",
abstract = "The compounds RE 5Co 4Si 14 (RE = Ho, Er, Tm, and Yb) have been synthesized from a Ga flux and characterized by X-ray diffraction. They can also be made by direct combination of the elements with arc melt alloying. All crystallize in the Lu 5Co 4Si 14 structure type in the monoclinic space group P2 1/c with lattice parameters: a = 12.3765(15) {\AA}, b = 7.8142(9) {\AA}, c = 7.7330(9) {\AA}, β= 98.867(2)°; a = 12.337(2) {\AA}, b = 7.7990(14) {\AA}, c = 7.7144(15) {\AA}, β= 98.85(3)°; a = 12.3140(16) {\AA}, b = 7.778(1) {\AA}, c = 7.705(1) {\AA}, β= 98.815(2)°; and a = 12.255(3) {\AA}, b = 7.7537(16) {\AA}, c = 7.6730(15) {\AA}, β= 98.95(3)° for Ho 5Co 4Si 14, Er 5Co 4Si 14, Tm 5Co 4Si 14, and Yb 5Co 4Si 14, respectively. The compounds are composed of a dense Si/Co framework that is assembled from [Co 4Si 10] slabs and [Si 4] zigzag chains. Crystals of the title compounds proved to be remarkably resistant to thermal oxidative attack (up to 1000° C) as well as chemical attack from concentrated mineral acids and bases. The origin of this behavior can be traced to the details of the crystal structure and the Si-rich nature of the crystal framework.",
author = "Salvador, {James R.} and Christos Malliakas and Gour, {Jeff R.} and Kanatzidis, {Mercouri G}",
year = "2005",
month = "4",
day = "5",
doi = "10.1021/cm047959w",
language = "English",
volume = "17",
pages = "1636--1645",
journal = "Chemistry of Materials",
issn = "0897-4756",
publisher = "American Chemical Society",
number = "7",

}

TY - JOUR

T1 - RE 5Co 4Si 14 (RE = Ho, Er, Tm, Yb)

T2 - Suicides grown from Ga flux showing exceptional resistance to chemical and thermal attack

AU - Salvador, James R.

AU - Malliakas, Christos

AU - Gour, Jeff R.

AU - Kanatzidis, Mercouri G

PY - 2005/4/5

Y1 - 2005/4/5

N2 - The compounds RE 5Co 4Si 14 (RE = Ho, Er, Tm, and Yb) have been synthesized from a Ga flux and characterized by X-ray diffraction. They can also be made by direct combination of the elements with arc melt alloying. All crystallize in the Lu 5Co 4Si 14 structure type in the monoclinic space group P2 1/c with lattice parameters: a = 12.3765(15) Å, b = 7.8142(9) Å, c = 7.7330(9) Å, β= 98.867(2)°; a = 12.337(2) Å, b = 7.7990(14) Å, c = 7.7144(15) Å, β= 98.85(3)°; a = 12.3140(16) Å, b = 7.778(1) Å, c = 7.705(1) Å, β= 98.815(2)°; and a = 12.255(3) Å, b = 7.7537(16) Å, c = 7.6730(15) Å, β= 98.95(3)° for Ho 5Co 4Si 14, Er 5Co 4Si 14, Tm 5Co 4Si 14, and Yb 5Co 4Si 14, respectively. The compounds are composed of a dense Si/Co framework that is assembled from [Co 4Si 10] slabs and [Si 4] zigzag chains. Crystals of the title compounds proved to be remarkably resistant to thermal oxidative attack (up to 1000° C) as well as chemical attack from concentrated mineral acids and bases. The origin of this behavior can be traced to the details of the crystal structure and the Si-rich nature of the crystal framework.

AB - The compounds RE 5Co 4Si 14 (RE = Ho, Er, Tm, and Yb) have been synthesized from a Ga flux and characterized by X-ray diffraction. They can also be made by direct combination of the elements with arc melt alloying. All crystallize in the Lu 5Co 4Si 14 structure type in the monoclinic space group P2 1/c with lattice parameters: a = 12.3765(15) Å, b = 7.8142(9) Å, c = 7.7330(9) Å, β= 98.867(2)°; a = 12.337(2) Å, b = 7.7990(14) Å, c = 7.7144(15) Å, β= 98.85(3)°; a = 12.3140(16) Å, b = 7.778(1) Å, c = 7.705(1) Å, β= 98.815(2)°; and a = 12.255(3) Å, b = 7.7537(16) Å, c = 7.6730(15) Å, β= 98.95(3)° for Ho 5Co 4Si 14, Er 5Co 4Si 14, Tm 5Co 4Si 14, and Yb 5Co 4Si 14, respectively. The compounds are composed of a dense Si/Co framework that is assembled from [Co 4Si 10] slabs and [Si 4] zigzag chains. Crystals of the title compounds proved to be remarkably resistant to thermal oxidative attack (up to 1000° C) as well as chemical attack from concentrated mineral acids and bases. The origin of this behavior can be traced to the details of the crystal structure and the Si-rich nature of the crystal framework.

UR - http://www.scopus.com/inward/record.url?scp=18144426752&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=18144426752&partnerID=8YFLogxK

U2 - 10.1021/cm047959w

DO - 10.1021/cm047959w

M3 - Article

VL - 17

SP - 1636

EP - 1645

JO - Chemistry of Materials

JF - Chemistry of Materials

SN - 0897-4756

IS - 7

ER -