REAL-TIME DIAGNOSIS OF ETCHING AND DEPOSITION PROCESS BY SPECTROSCOPIC ELLIPSOMETRY.

D. E. Aspnes, Robert P. H. Chang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

Recent advances in instrumentation and data analysis have made spectroscopic ellipsometry a routine analytic tool with submonolayer sensitivity for monitoring and controlling cleaning, etching, deposition, or other processes that take place in relatively high-pressure or reactive environments. We discuss representative applications in chemical etching, plasma processing, and MOCVD to illustrate analytical procedures and to indicate other potential uses of the technique.

Original languageEnglish
Title of host publicationMaterials Research Society Symposia Proceedings
EditorsA.Wayne Johnson, Daniel J. Ehrlich, Howard R. Schlossberg
PublisherNorth-Holland
Pages217-224
Number of pages8
Volume29
ISBN (Print)0444008942
Publication statusPublished - 1984

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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  • Cite this

    Aspnes, D. E., & Chang, R. P. H. (1984). REAL-TIME DIAGNOSIS OF ETCHING AND DEPOSITION PROCESS BY SPECTROSCOPIC ELLIPSOMETRY. In A. W. Johnson, D. J. Ehrlich, & H. R. Schlossberg (Eds.), Materials Research Society Symposia Proceedings (Vol. 29, pp. 217-224). North-Holland.