Real-time measurements of interfacial charge transfer rates at silicon/liquid junctions

Malcolm D E Forbes, Nathan S Lewis

Research output: Contribution to journalArticle

39 Citations (Scopus)
Original languageEnglish
Pages (from-to)3682-3683
Number of pages2
JournalJournal of the American Chemical Society
Volume112
Issue number9
Publication statusPublished - Apr 25 1990

ASJC Scopus subject areas

  • Chemistry(all)

Cite this

Real-time measurements of interfacial charge transfer rates at silicon/liquid junctions. / Forbes, Malcolm D E; Lewis, Nathan S.

In: Journal of the American Chemical Society, Vol. 112, No. 9, 25.04.1990, p. 3682-3683.

Research output: Contribution to journalArticle

@article{5e12ce1cf24c499c994dc732af11206d,
title = "Real-time measurements of interfacial charge transfer rates at silicon/liquid junctions",
author = "Forbes, {Malcolm D E} and Lewis, {Nathan S}",
year = "1990",
month = "4",
day = "25",
language = "English",
volume = "112",
pages = "3682--3683",
journal = "Journal of the American Chemical Society",
issn = "0002-7863",
publisher = "American Chemical Society",
number = "9",

}

TY - JOUR

T1 - Real-time measurements of interfacial charge transfer rates at silicon/liquid junctions

AU - Forbes, Malcolm D E

AU - Lewis, Nathan S

PY - 1990/4/25

Y1 - 1990/4/25

UR - http://www.scopus.com/inward/record.url?scp=0025041072&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0025041072&partnerID=8YFLogxK

M3 - Article

VL - 112

SP - 3682

EP - 3683

JO - Journal of the American Chemical Society

JF - Journal of the American Chemical Society

SN - 0002-7863

IS - 9

ER -