Abstract
We report in situ infrared measurements of ion-induced reconfiguration and dissociation of bonded hydrogen associated with various defects in silicon at low temperatures. Defect-associated Si-H complexes were prepared by low-temperature proton implantation in silicon followed by room-temperature annealing. As a result of subsequent low-temperature He3 ion irradiation, we observed (1) ion-induced dissociation of Si-H complexes, (2) a notable difference in the dissociation rate of interstitial- and vacancy-type defects, and, unexpectedly, (3) the growth of bond-centered hydrogen, which is generally observed in association with low-temperature proton implantation. These findings provide insight into the mechanisms responsible for the dissociation of hydrogen bonds in silicon and thus have important implications for bond-selective nanoscale engineering and the long-term reliability of state-of-the-art silicon semiconductor and photovoltaic devices.
| Original language | English |
|---|---|
| Article number | 045204 |
| Journal | Physical Review B - Condensed Matter and Materials Physics |
| Volume | 83 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - Jan 28 2011 |
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ASJC Scopus subject areas
- Condensed Matter Physics
- Electronic, Optical and Magnetic Materials
Cite this
Reconfiguration and dissociation of bonded hydrogen in silicon by energetic ions. / Nageswara Rao, S. V S; Dixit, S. K.; Lüpke, G.; Tolk, N. H.; Feldman, Leonard C.
In: Physical Review B - Condensed Matter and Materials Physics, Vol. 83, No. 4, 045204, 28.01.2011.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Reconfiguration and dissociation of bonded hydrogen in silicon by energetic ions
AU - Nageswara Rao, S. V S
AU - Dixit, S. K.
AU - Lüpke, G.
AU - Tolk, N. H.
AU - Feldman, Leonard C
PY - 2011/1/28
Y1 - 2011/1/28
N2 - We report in situ infrared measurements of ion-induced reconfiguration and dissociation of bonded hydrogen associated with various defects in silicon at low temperatures. Defect-associated Si-H complexes were prepared by low-temperature proton implantation in silicon followed by room-temperature annealing. As a result of subsequent low-temperature He3 ion irradiation, we observed (1) ion-induced dissociation of Si-H complexes, (2) a notable difference in the dissociation rate of interstitial- and vacancy-type defects, and, unexpectedly, (3) the growth of bond-centered hydrogen, which is generally observed in association with low-temperature proton implantation. These findings provide insight into the mechanisms responsible for the dissociation of hydrogen bonds in silicon and thus have important implications for bond-selective nanoscale engineering and the long-term reliability of state-of-the-art silicon semiconductor and photovoltaic devices.
AB - We report in situ infrared measurements of ion-induced reconfiguration and dissociation of bonded hydrogen associated with various defects in silicon at low temperatures. Defect-associated Si-H complexes were prepared by low-temperature proton implantation in silicon followed by room-temperature annealing. As a result of subsequent low-temperature He3 ion irradiation, we observed (1) ion-induced dissociation of Si-H complexes, (2) a notable difference in the dissociation rate of interstitial- and vacancy-type defects, and, unexpectedly, (3) the growth of bond-centered hydrogen, which is generally observed in association with low-temperature proton implantation. These findings provide insight into the mechanisms responsible for the dissociation of hydrogen bonds in silicon and thus have important implications for bond-selective nanoscale engineering and the long-term reliability of state-of-the-art silicon semiconductor and photovoltaic devices.
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U2 - 10.1103/PhysRevB.83.045204
DO - 10.1103/PhysRevB.83.045204
M3 - Article
VL - 83
JO - Physical Review B-Condensed Matter
JF - Physical Review B-Condensed Matter
SN - 1098-0121
IS - 4
M1 - 045204
ER -