Reconfiguration and dissociation of bonded hydrogen in silicon by energetic ions

S. V S Nageswara Rao, S. K. Dixit, G. Lüpke, N. H. Tolk, Leonard C Feldman

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We report in situ infrared measurements of ion-induced reconfiguration and dissociation of bonded hydrogen associated with various defects in silicon at low temperatures. Defect-associated Si-H complexes were prepared by low-temperature proton implantation in silicon followed by room-temperature annealing. As a result of subsequent low-temperature He3 ion irradiation, we observed (1) ion-induced dissociation of Si-H complexes, (2) a notable difference in the dissociation rate of interstitial- and vacancy-type defects, and, unexpectedly, (3) the growth of bond-centered hydrogen, which is generally observed in association with low-temperature proton implantation. These findings provide insight into the mechanisms responsible for the dissociation of hydrogen bonds in silicon and thus have important implications for bond-selective nanoscale engineering and the long-term reliability of state-of-the-art silicon semiconductor and photovoltaic devices.

Original languageEnglish
Article number045204
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume83
Issue number4
DOIs
Publication statusPublished - Jan 28 2011

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Silicon
Hydrogen
dissociation
Ions
silicon
hydrogen
implantation
defects
ions
Ion implantation
Defects
Protons
Temperature
protons
ion irradiation
semiconductor devices
Ion bombardment
interstitials
Vacancies
engineering

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

Reconfiguration and dissociation of bonded hydrogen in silicon by energetic ions. / Nageswara Rao, S. V S; Dixit, S. K.; Lüpke, G.; Tolk, N. H.; Feldman, Leonard C.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 83, No. 4, 045204, 28.01.2011.

Research output: Contribution to journalArticle

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