Reduced contact resistance in inkjet printed high-performance amorphous indium gallium zinc oxide transistors

Jonathan W. Hennek, Yu Xia, Ken Everaerts, Mark C. Hersam, Antonio Facchetti, Tobin J. Marks

Research output: Contribution to journalArticle

58 Citations (Scopus)


Solution processing of amorphous metal oxide materials to fabricate thin-film transistors (TFTs) has received great recent interest. We demonstrate here an optimized "ink" and printing process for inkjet patterning of amorphous indium gallium zinc oxide (a-IGZO) TFTs and investigate the effects of device structure on derived electron mobility. Bottom-gate top-contact (BGTC) TFTs are fabricated and shown to exhibit electron mobilities comparable to a-Si:H. Furthermore, a record electron mobility of 2.5 cm 2 V -1 s -1 is demonstrated for bottom-gate bottom-contact (BGBC) TFTs. The mechanism underlying such impressive performance is investigated using transmission line techniques, and it is shown that the semiconductor-source/drain electrode interface contact resistance is nearly an order of magnitude lower for BGBC transistors versus BGTC devices.

Original languageEnglish
Pages (from-to)1614-1619
Number of pages6
JournalACS Applied Materials and Interfaces
Issue number3
Publication statusPublished - Mar 28 2012



  • contact resistance
  • device structure
  • inkjet printing
  • metal oxide semiconductor
  • thin-film transistor
  • transparent electronics

ASJC Scopus subject areas

  • Materials Science(all)

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