Reduced contact resistance in inkjet printed high-performance amorphous indium gallium zinc oxide transistors

Jonathan W. Hennek, Yu Xia, Ken Everaerts, Mark C Hersam, Antonio Facchetti, Tobin J Marks

Research output: Contribution to journalArticle

58 Citations (Scopus)

Abstract

Solution processing of amorphous metal oxide materials to fabricate thin-film transistors (TFTs) has received great recent interest. We demonstrate here an optimized "ink" and printing process for inkjet patterning of amorphous indium gallium zinc oxide (a-IGZO) TFTs and investigate the effects of device structure on derived electron mobility. Bottom-gate top-contact (BGTC) TFTs are fabricated and shown to exhibit electron mobilities comparable to a-Si:H. Furthermore, a record electron mobility of 2.5 cm 2 V -1 s -1 is demonstrated for bottom-gate bottom-contact (BGBC) TFTs. The mechanism underlying such impressive performance is investigated using transmission line techniques, and it is shown that the semiconductor-source/drain electrode interface contact resistance is nearly an order of magnitude lower for BGBC transistors versus BGTC devices.

Original languageEnglish
Pages (from-to)1614-1619
Number of pages6
JournalACS Applied Materials and Interfaces
Volume4
Issue number3
DOIs
Publication statusPublished - Mar 28 2012

Fingerprint

Zinc Oxide
Gallium
Indium
Thin film transistors
Contact resistance
Zinc oxide
Electron mobility
Transistors
Ink
Oxides
Oxide films
Printing
Electric lines
Metals
Semiconductor materials
Electrodes
Processing

Keywords

  • contact resistance
  • device structure
  • inkjet printing
  • metal oxide semiconductor
  • thin-film transistor
  • transparent electronics

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Reduced contact resistance in inkjet printed high-performance amorphous indium gallium zinc oxide transistors. / Hennek, Jonathan W.; Xia, Yu; Everaerts, Ken; Hersam, Mark C; Facchetti, Antonio; Marks, Tobin J.

In: ACS Applied Materials and Interfaces, Vol. 4, No. 3, 28.03.2012, p. 1614-1619.

Research output: Contribution to journalArticle

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