Reduced graphene oxide thin films as ultrabarriers for organic electronics

Hisato Yamaguchi, Jimmy Granstrom, Wanyi Nie, Hossein Sojoudi, Takeshi Fujita, Damien Voiry, Mingwei Chen, Gautam Gupta, Aditya D. Mohite, Samuel Graham, Manish Chhowalla

Research output: Contribution to journalArticle

37 Citations (Scopus)

Abstract

Encapsulation of electronic devices based on organic materials that are prone to degradation even under normal atmospheric conditions with hermetic barriers is crucial for increasing their lifetime. A challenge is to develop ultrabarriers that are impermeable, flexible, and preferably transparent. Another important requirement is that they must be compatible with organic electronics fabrication schemes (i.e., must be solution processable, deposited at room temperature and be chemically inert). Here, a lifetime increase of 1300 h for poly(3-hexylthiophene) (P3HT) films encapsulated by uniform and continuous thin (≈10 nm) films of reduced graphene oxide (rGO) is reported. This level of protection against oxygen/water vapor diffusion is substantially better than conventional polymeric barriers such as Cytop, which degrades after only 350 h despite being 400 nm thick. Analysis using atomic force microscopy, X-ray photoelectron spectroscopy, and high-resolution transmission electron microscopy suggest that the superior oxygen gas/moisture barrier property of rGO is due to the close interlayer distance packing and absence of pinholes within the impermeable sheets. These material properties can be correlated to the enhanced lag time of 500 h. The results provide new insight for the design of high-performance and solution-processable transparent ultrabarriers for a wide range of encapsulation applications.

Original languageEnglish
Article number1300986
JournalAdvanced Energy Materials
Volume4
Issue number4
DOIs
Publication statusPublished - Mar 11 2014

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Graphite
Encapsulation
Oxides
Graphene
Oxide films
Electronic equipment
Oxygen
Thin films
Steam
High resolution transmission electron microscopy
Water vapor
Atomic force microscopy
Materials properties
Moisture
X ray photoelectron spectroscopy
Gases
Fabrication
Degradation
Temperature
poly(3-hexylthiophene)

Keywords

  • gas barrier
  • graphene oxide
  • organic electronics
  • solution processing

ASJC Scopus subject areas

  • Renewable Energy, Sustainability and the Environment
  • Materials Science(all)

Cite this

Reduced graphene oxide thin films as ultrabarriers for organic electronics. / Yamaguchi, Hisato; Granstrom, Jimmy; Nie, Wanyi; Sojoudi, Hossein; Fujita, Takeshi; Voiry, Damien; Chen, Mingwei; Gupta, Gautam; Mohite, Aditya D.; Graham, Samuel; Chhowalla, Manish.

In: Advanced Energy Materials, Vol. 4, No. 4, 1300986, 11.03.2014.

Research output: Contribution to journalArticle

Yamaguchi, H, Granstrom, J, Nie, W, Sojoudi, H, Fujita, T, Voiry, D, Chen, M, Gupta, G, Mohite, AD, Graham, S & Chhowalla, M 2014, 'Reduced graphene oxide thin films as ultrabarriers for organic electronics', Advanced Energy Materials, vol. 4, no. 4, 1300986. https://doi.org/10.1002/aenm.201300986
Yamaguchi H, Granstrom J, Nie W, Sojoudi H, Fujita T, Voiry D et al. Reduced graphene oxide thin films as ultrabarriers for organic electronics. Advanced Energy Materials. 2014 Mar 11;4(4). 1300986. https://doi.org/10.1002/aenm.201300986
Yamaguchi, Hisato ; Granstrom, Jimmy ; Nie, Wanyi ; Sojoudi, Hossein ; Fujita, Takeshi ; Voiry, Damien ; Chen, Mingwei ; Gupta, Gautam ; Mohite, Aditya D. ; Graham, Samuel ; Chhowalla, Manish. / Reduced graphene oxide thin films as ultrabarriers for organic electronics. In: Advanced Energy Materials. 2014 ; Vol. 4, No. 4.
@article{27fde6c61a8d40d59257c4bd95950ec4,
title = "Reduced graphene oxide thin films as ultrabarriers for organic electronics",
abstract = "Encapsulation of electronic devices based on organic materials that are prone to degradation even under normal atmospheric conditions with hermetic barriers is crucial for increasing their lifetime. A challenge is to develop ultrabarriers that are impermeable, flexible, and preferably transparent. Another important requirement is that they must be compatible with organic electronics fabrication schemes (i.e., must be solution processable, deposited at room temperature and be chemically inert). Here, a lifetime increase of 1300 h for poly(3-hexylthiophene) (P3HT) films encapsulated by uniform and continuous thin (≈10 nm) films of reduced graphene oxide (rGO) is reported. This level of protection against oxygen/water vapor diffusion is substantially better than conventional polymeric barriers such as Cytop, which degrades after only 350 h despite being 400 nm thick. Analysis using atomic force microscopy, X-ray photoelectron spectroscopy, and high-resolution transmission electron microscopy suggest that the superior oxygen gas/moisture barrier property of rGO is due to the close interlayer distance packing and absence of pinholes within the impermeable sheets. These material properties can be correlated to the enhanced lag time of 500 h. The results provide new insight for the design of high-performance and solution-processable transparent ultrabarriers for a wide range of encapsulation applications.",
keywords = "gas barrier, graphene oxide, organic electronics, solution processing",
author = "Hisato Yamaguchi and Jimmy Granstrom and Wanyi Nie and Hossein Sojoudi and Takeshi Fujita and Damien Voiry and Mingwei Chen and Gautam Gupta and Mohite, {Aditya D.} and Samuel Graham and Manish Chhowalla",
year = "2014",
month = "3",
day = "11",
doi = "10.1002/aenm.201300986",
language = "English",
volume = "4",
journal = "Advanced Energy Materials",
issn = "1614-6832",
publisher = "Wiley-VCH Verlag",
number = "4",

}

TY - JOUR

T1 - Reduced graphene oxide thin films as ultrabarriers for organic electronics

AU - Yamaguchi, Hisato

AU - Granstrom, Jimmy

AU - Nie, Wanyi

AU - Sojoudi, Hossein

AU - Fujita, Takeshi

AU - Voiry, Damien

AU - Chen, Mingwei

AU - Gupta, Gautam

AU - Mohite, Aditya D.

AU - Graham, Samuel

AU - Chhowalla, Manish

PY - 2014/3/11

Y1 - 2014/3/11

N2 - Encapsulation of electronic devices based on organic materials that are prone to degradation even under normal atmospheric conditions with hermetic barriers is crucial for increasing their lifetime. A challenge is to develop ultrabarriers that are impermeable, flexible, and preferably transparent. Another important requirement is that they must be compatible with organic electronics fabrication schemes (i.e., must be solution processable, deposited at room temperature and be chemically inert). Here, a lifetime increase of 1300 h for poly(3-hexylthiophene) (P3HT) films encapsulated by uniform and continuous thin (≈10 nm) films of reduced graphene oxide (rGO) is reported. This level of protection against oxygen/water vapor diffusion is substantially better than conventional polymeric barriers such as Cytop, which degrades after only 350 h despite being 400 nm thick. Analysis using atomic force microscopy, X-ray photoelectron spectroscopy, and high-resolution transmission electron microscopy suggest that the superior oxygen gas/moisture barrier property of rGO is due to the close interlayer distance packing and absence of pinholes within the impermeable sheets. These material properties can be correlated to the enhanced lag time of 500 h. The results provide new insight for the design of high-performance and solution-processable transparent ultrabarriers for a wide range of encapsulation applications.

AB - Encapsulation of electronic devices based on organic materials that are prone to degradation even under normal atmospheric conditions with hermetic barriers is crucial for increasing their lifetime. A challenge is to develop ultrabarriers that are impermeable, flexible, and preferably transparent. Another important requirement is that they must be compatible with organic electronics fabrication schemes (i.e., must be solution processable, deposited at room temperature and be chemically inert). Here, a lifetime increase of 1300 h for poly(3-hexylthiophene) (P3HT) films encapsulated by uniform and continuous thin (≈10 nm) films of reduced graphene oxide (rGO) is reported. This level of protection against oxygen/water vapor diffusion is substantially better than conventional polymeric barriers such as Cytop, which degrades after only 350 h despite being 400 nm thick. Analysis using atomic force microscopy, X-ray photoelectron spectroscopy, and high-resolution transmission electron microscopy suggest that the superior oxygen gas/moisture barrier property of rGO is due to the close interlayer distance packing and absence of pinholes within the impermeable sheets. These material properties can be correlated to the enhanced lag time of 500 h. The results provide new insight for the design of high-performance and solution-processable transparent ultrabarriers for a wide range of encapsulation applications.

KW - gas barrier

KW - graphene oxide

KW - organic electronics

KW - solution processing

UR - http://www.scopus.com/inward/record.url?scp=84900634238&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84900634238&partnerID=8YFLogxK

U2 - 10.1002/aenm.201300986

DO - 10.1002/aenm.201300986

M3 - Article

VL - 4

JO - Advanced Energy Materials

JF - Advanced Energy Materials

SN - 1614-6832

IS - 4

M1 - 1300986

ER -