Abstract
Single-layer graphene derived from chemical vapor deposition (CVD) holds promise for scalable radio frequency (RF) electronic applications. However, prevalent low-frequency flicker noise (1/f noise) in CVD graphene field-effect transistors is often up-converted to higher frequencies, thus limiting RF device performance. Here, we achieve an order of magnitude reduction in 1/f noise in field-effect transistors based on CVD graphene transferred onto silicon oxide substrates by utilizing a processing protocol that avoids aqueous chemistry after graphene transfer. Correspondingly, the normalized noise spectral density (10-7-10-8μm2 Hz-1) and noise amplitude (4 × 10-8-10-7) in these devices are comparable to those of exfoliated and suspended graphene. We attribute the reduction in 1/f noise to a decrease in the contribution of fluctuations in the scattering cross-sections of carriers arising from dynamic redistribution of interfacial disorder.
| Original language | English |
|---|---|
| Article number | 073108 |
| Journal | Applied Physics Letters |
| Volume | 108 |
| Issue number | 7 |
| DOIs | |
| Publication status | Published - Feb 15 2016 |
Fingerprint
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
Reducing flicker noise in chemical vapor deposition graphene field-effect transistors. / Arnold, Heather N.; Sangwan, Vinod K.; Schmucker, Scott W.; Cress, Cory D.; Luck, Kyle A.; Friedman, Adam L.; Robinson, Jeremy T.; Marks, Tobin J; Hersam, Mark C.
In: Applied Physics Letters, Vol. 108, No. 7, 073108, 15.02.2016.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Reducing flicker noise in chemical vapor deposition graphene field-effect transistors
AU - Arnold, Heather N.
AU - Sangwan, Vinod K.
AU - Schmucker, Scott W.
AU - Cress, Cory D.
AU - Luck, Kyle A.
AU - Friedman, Adam L.
AU - Robinson, Jeremy T.
AU - Marks, Tobin J
AU - Hersam, Mark C
PY - 2016/2/15
Y1 - 2016/2/15
N2 - Single-layer graphene derived from chemical vapor deposition (CVD) holds promise for scalable radio frequency (RF) electronic applications. However, prevalent low-frequency flicker noise (1/f noise) in CVD graphene field-effect transistors is often up-converted to higher frequencies, thus limiting RF device performance. Here, we achieve an order of magnitude reduction in 1/f noise in field-effect transistors based on CVD graphene transferred onto silicon oxide substrates by utilizing a processing protocol that avoids aqueous chemistry after graphene transfer. Correspondingly, the normalized noise spectral density (10-7-10-8μm2 Hz-1) and noise amplitude (4 × 10-8-10-7) in these devices are comparable to those of exfoliated and suspended graphene. We attribute the reduction in 1/f noise to a decrease in the contribution of fluctuations in the scattering cross-sections of carriers arising from dynamic redistribution of interfacial disorder.
AB - Single-layer graphene derived from chemical vapor deposition (CVD) holds promise for scalable radio frequency (RF) electronic applications. However, prevalent low-frequency flicker noise (1/f noise) in CVD graphene field-effect transistors is often up-converted to higher frequencies, thus limiting RF device performance. Here, we achieve an order of magnitude reduction in 1/f noise in field-effect transistors based on CVD graphene transferred onto silicon oxide substrates by utilizing a processing protocol that avoids aqueous chemistry after graphene transfer. Correspondingly, the normalized noise spectral density (10-7-10-8μm2 Hz-1) and noise amplitude (4 × 10-8-10-7) in these devices are comparable to those of exfoliated and suspended graphene. We attribute the reduction in 1/f noise to a decrease in the contribution of fluctuations in the scattering cross-sections of carriers arising from dynamic redistribution of interfacial disorder.
UR - http://www.scopus.com/inward/record.url?scp=84959214675&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84959214675&partnerID=8YFLogxK
U2 - 10.1063/1.4942468
DO - 10.1063/1.4942468
M3 - Article
AN - SCOPUS:84959214675
VL - 108
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 7
M1 - 073108
ER -