Reducing flicker noise in chemical vapor deposition graphene field-effect transistors

Heather N. Arnold, Vinod K. Sangwan, Scott W. Schmucker, Cory D. Cress, Kyle A. Luck, Adam L. Friedman, Jeremy T. Robinson, Tobin J Marks, Mark C Hersam

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Abstract

Single-layer graphene derived from chemical vapor deposition (CVD) holds promise for scalable radio frequency (RF) electronic applications. However, prevalent low-frequency flicker noise (1/f noise) in CVD graphene field-effect transistors is often up-converted to higher frequencies, thus limiting RF device performance. Here, we achieve an order of magnitude reduction in 1/f noise in field-effect transistors based on CVD graphene transferred onto silicon oxide substrates by utilizing a processing protocol that avoids aqueous chemistry after graphene transfer. Correspondingly, the normalized noise spectral density (10-7-10-8μm2 Hz-1) and noise amplitude (4 × 10-8-10-7) in these devices are comparable to those of exfoliated and suspended graphene. We attribute the reduction in 1/f noise to a decrease in the contribution of fluctuations in the scattering cross-sections of carriers arising from dynamic redistribution of interfacial disorder.

Original languageEnglish
Article number073108
JournalApplied Physics Letters
Volume108
Issue number7
DOIs
Publication statusPublished - Feb 15 2016

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Arnold, H. N., Sangwan, V. K., Schmucker, S. W., Cress, C. D., Luck, K. A., Friedman, A. L., Robinson, J. T., Marks, T. J., & Hersam, M. C. (2016). Reducing flicker noise in chemical vapor deposition graphene field-effect transistors. Applied Physics Letters, 108(7), [073108]. https://doi.org/10.1063/1.4942468