Reducing flicker noise in chemical vapor deposition graphene field-effect transistors

Heather N. Arnold, Vinod K. Sangwan, Scott W. Schmucker, Cory D. Cress, Kyle A. Luck, Adam L. Friedman, Jeremy T. Robinson, Tobin J. Marks, Mark C. Hersam

Research output: Contribution to journalArticlepeer-review

14 Citations (Scopus)

Abstract

Single-layer graphene derived from chemical vapor deposition (CVD) holds promise for scalable radio frequency (RF) electronic applications. However, prevalent low-frequency flicker noise (1/f noise) in CVD graphene field-effect transistors is often up-converted to higher frequencies, thus limiting RF device performance. Here, we achieve an order of magnitude reduction in 1/f noise in field-effect transistors based on CVD graphene transferred onto silicon oxide substrates by utilizing a processing protocol that avoids aqueous chemistry after graphene transfer. Correspondingly, the normalized noise spectral density (10-7-10-8μm2 Hz-1) and noise amplitude (4 × 10-8-10-7) in these devices are comparable to those of exfoliated and suspended graphene. We attribute the reduction in 1/f noise to a decrease in the contribution of fluctuations in the scattering cross-sections of carriers arising from dynamic redistribution of interfacial disorder.

Original languageEnglish
Article number073108
JournalApplied Physics Letters
Volume108
Issue number7
DOIs
Publication statusPublished - Feb 15 2016

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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