Reduction of native oxides on GaAs during atomic layer growth of Al 2O3

Hang Dong Lee; Tian Feng; Lei Yu; Daniel Mastrogiovanni; Alan Wan; Torgny Gustafsson; Eric Garfunkel

doi:10.1063/1.3148723

Reduction of native oxides on GaAs during atomic layer growth of Al ₂O₃

Hang Dong Lee, Tian Feng, Lei Yu, Daniel Mastrogiovanni, Alan Wan, Torgny Gustafsson, Eric Garfunkel

Rutgers University

Research output: Contribution to journal › Article › peer-review

75 Citations (Scopus)

Abstract

The reduction of surface "native" oxides from GaAs substrates following reactions with trimethylaluminum (TMA) precursor is studied using medium energy ion scattering spectroscopy (MEIS) and x-ray photoelectron spectroscopy (XPS). MEIS measurements after one single TMA pulse show that ∼65% of the native oxide is reduced, confirmed by XPS measurement, and a 5 Å thick oxygen-rich aluminum oxide layer is formed. This reduction occurs upon TMA exposure to as-received GaAs wafers.

Original language	English
Article number	222108
Journal	Applied Physics Letters
Volume	94
Issue number	22
DOIs	https://doi.org/10.1063/1.3148723
Publication status	Published - 2009

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.3148723

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abstract = "The reduction of surface {"}native{"} oxides from GaAs substrates following reactions with trimethylaluminum (TMA) precursor is studied using medium energy ion scattering spectroscopy (MEIS) and x-ray photoelectron spectroscopy (XPS). MEIS measurements after one single TMA pulse show that ∼65% of the native oxide is reduced, confirmed by XPS measurement, and a 5 {\AA} thick oxygen-rich aluminum oxide layer is formed. This reduction occurs upon TMA exposure to as-received GaAs wafers.",

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AU - Lee, Hang Dong

AU - Feng, Tian

AU - Yu, Lei

AU - Mastrogiovanni, Daniel

AU - Wan, Alan

AU - Gustafsson, Torgny

AU - Garfunkel, Eric

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AB - The reduction of surface "native" oxides from GaAs substrates following reactions with trimethylaluminum (TMA) precursor is studied using medium energy ion scattering spectroscopy (MEIS) and x-ray photoelectron spectroscopy (XPS). MEIS measurements after one single TMA pulse show that ∼65% of the native oxide is reduced, confirmed by XPS measurement, and a 5 Å thick oxygen-rich aluminum oxide layer is formed. This reduction occurs upon TMA exposure to as-received GaAs wafers.

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