Reduction of native oxides on GaAs during atomic layer growth of Al 2O3

Hang Dong Lee; Tian Feng; Lei Yu; Daniel Mastrogiovanni; Alan Wan; Torgny Gustafsson; Eric Garfunkel

doi:10.1063/1.3148723

Reduction of native oxides on GaAs during atomic layer growth of Al ₂O₃

Hang Dong Lee, Tian Feng, Lei Yu, Daniel Mastrogiovanni, Alan Wan, Torgny Gustafsson, Eric Garfunkel

Rutgers University

Research output: Contribution to journal › Article

74 Citations (Scopus)

Abstract

The reduction of surface "native" oxides from GaAs substrates following reactions with trimethylaluminum (TMA) precursor is studied using medium energy ion scattering spectroscopy (MEIS) and x-ray photoelectron spectroscopy (XPS). MEIS measurements after one single TMA pulse show that ∼65% of the native oxide is reduced, confirmed by XPS measurement, and a 5 Å thick oxygen-rich aluminum oxide layer is formed. This reduction occurs upon TMA exposure to as-received GaAs wafers.

Original language	English
Article number	222108
Journal	Applied Physics Letters
Volume	94
Issue number	22
DOIs	https://doi.org/10.1063/1.3148723
Publication status	Published - Jun 15 2009

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.3148723

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Lee, H. D., Feng, T., Yu, L., Mastrogiovanni, D., Wan, A., Gustafsson, T., & Garfunkel, E. (2009). Reduction of native oxides on GaAs during atomic layer growth of Al ₂O₃. Applied Physics Letters, 94(22), [222108]. https://doi.org/10.1063/1.3148723

@article{594f0dbb959142f8a95f23e17d9c3ca7,

title = "Reduction of native oxides on GaAs during atomic layer growth of Al 2O3",

abstract = "The reduction of surface {"}native{"} oxides from GaAs substrates following reactions with trimethylaluminum (TMA) precursor is studied using medium energy ion scattering spectroscopy (MEIS) and x-ray photoelectron spectroscopy (XPS). MEIS measurements after one single TMA pulse show that ∼65% of the native oxide is reduced, confirmed by XPS measurement, and a 5 {\AA} thick oxygen-rich aluminum oxide layer is formed. This reduction occurs upon TMA exposure to as-received GaAs wafers.",

author = "Lee, {Hang Dong} and Tian Feng and Lei Yu and Daniel Mastrogiovanni and Alan Wan and Torgny Gustafsson and Eric Garfunkel",

year = "2009",

month = jun,

day = "15",

doi = "10.1063/1.3148723",

language = "English",

volume = "94",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "22",

}

TY - JOUR

T1 - Reduction of native oxides on GaAs during atomic layer growth of Al 2O3

AU - Lee, Hang Dong

AU - Feng, Tian

AU - Yu, Lei

AU - Mastrogiovanni, Daniel

AU - Wan, Alan

AU - Gustafsson, Torgny

AU - Garfunkel, Eric

PY - 2009/6/15

Y1 - 2009/6/15

N2 - The reduction of surface "native" oxides from GaAs substrates following reactions with trimethylaluminum (TMA) precursor is studied using medium energy ion scattering spectroscopy (MEIS) and x-ray photoelectron spectroscopy (XPS). MEIS measurements after one single TMA pulse show that ∼65% of the native oxide is reduced, confirmed by XPS measurement, and a 5 Å thick oxygen-rich aluminum oxide layer is formed. This reduction occurs upon TMA exposure to as-received GaAs wafers.

AB - The reduction of surface "native" oxides from GaAs substrates following reactions with trimethylaluminum (TMA) precursor is studied using medium energy ion scattering spectroscopy (MEIS) and x-ray photoelectron spectroscopy (XPS). MEIS measurements after one single TMA pulse show that ∼65% of the native oxide is reduced, confirmed by XPS measurement, and a 5 Å thick oxygen-rich aluminum oxide layer is formed. This reduction occurs upon TMA exposure to as-received GaAs wafers.

UR - http://www.scopus.com/inward/record.url?scp=66749167599&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=66749167599&partnerID=8YFLogxK

U2 - 10.1063/1.3148723

DO - 10.1063/1.3148723

M3 - Article

AN - SCOPUS:66749167599

VL - 94

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 22

M1 - 222108

ER -