Reduction of native oxides on GaAs during atomic layer growth of Al 2O3

Hang Dong Lee, Tian Feng, Lei Yu, Daniel Mastrogiovanni, Alan Wan, Torgny Gustafsson, Eric Garfunkel

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Abstract

The reduction of surface "native" oxides from GaAs substrates following reactions with trimethylaluminum (TMA) precursor is studied using medium energy ion scattering spectroscopy (MEIS) and x-ray photoelectron spectroscopy (XPS). MEIS measurements after one single TMA pulse show that ∼65% of the native oxide is reduced, confirmed by XPS measurement, and a 5 Å thick oxygen-rich aluminum oxide layer is formed. This reduction occurs upon TMA exposure to as-received GaAs wafers.

Original languageEnglish
Article number222108
JournalApplied Physics Letters
Volume94
Issue number22
DOIs
Publication statusPublished - Jun 15 2009

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Lee, H. D., Feng, T., Yu, L., Mastrogiovanni, D., Wan, A., Gustafsson, T., & Garfunkel, E. (2009). Reduction of native oxides on GaAs during atomic layer growth of Al 2O3. Applied Physics Letters, 94(22), [222108]. https://doi.org/10.1063/1.3148723