Reduction of native oxides on GaAs during atomic layer growth of Al 2O3

Hang Dong Lee, Tian Feng, Lei Yu, Daniel Mastrogiovanni, Alan Wan, Torgny Gustafsson, Eric Garfunkel

Research output: Contribution to journalArticle

68 Citations (Scopus)

Abstract

The reduction of surface "native" oxides from GaAs substrates following reactions with trimethylaluminum (TMA) precursor is studied using medium energy ion scattering spectroscopy (MEIS) and x-ray photoelectron spectroscopy (XPS). MEIS measurements after one single TMA pulse show that ∼65% of the native oxide is reduced, confirmed by XPS measurement, and a 5 Å thick oxygen-rich aluminum oxide layer is formed. This reduction occurs upon TMA exposure to as-received GaAs wafers.

Original languageEnglish
Article number222108
JournalApplied Physics Letters
Volume94
Issue number22
DOIs
Publication statusPublished - 2009

Fingerprint

ion scattering
x ray spectroscopy
photoelectron spectroscopy
oxides
spectroscopy
aluminum oxides
wafers
energy
oxygen
pulses

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Lee, H. D., Feng, T., Yu, L., Mastrogiovanni, D., Wan, A., Gustafsson, T., & Garfunkel, E. (2009). Reduction of native oxides on GaAs during atomic layer growth of Al 2O3 . Applied Physics Letters, 94(22), [222108]. https://doi.org/10.1063/1.3148723

Reduction of native oxides on GaAs during atomic layer growth of Al 2O3 . / Lee, Hang Dong; Feng, Tian; Yu, Lei; Mastrogiovanni, Daniel; Wan, Alan; Gustafsson, Torgny; Garfunkel, Eric.

In: Applied Physics Letters, Vol. 94, No. 22, 222108, 2009.

Research output: Contribution to journalArticle

Lee, HD, Feng, T, Yu, L, Mastrogiovanni, D, Wan, A, Gustafsson, T & Garfunkel, E 2009, 'Reduction of native oxides on GaAs during atomic layer growth of Al 2O3 ', Applied Physics Letters, vol. 94, no. 22, 222108. https://doi.org/10.1063/1.3148723
Lee HD, Feng T, Yu L, Mastrogiovanni D, Wan A, Gustafsson T et al. Reduction of native oxides on GaAs during atomic layer growth of Al 2O3 . Applied Physics Letters. 2009;94(22). 222108. https://doi.org/10.1063/1.3148723
Lee, Hang Dong ; Feng, Tian ; Yu, Lei ; Mastrogiovanni, Daniel ; Wan, Alan ; Gustafsson, Torgny ; Garfunkel, Eric. / Reduction of native oxides on GaAs during atomic layer growth of Al 2O3 . In: Applied Physics Letters. 2009 ; Vol. 94, No. 22.
@article{594f0dbb959142f8a95f23e17d9c3ca7,
title = "Reduction of native oxides on GaAs during atomic layer growth of Al 2O3",
abstract = "The reduction of surface {"}native{"} oxides from GaAs substrates following reactions with trimethylaluminum (TMA) precursor is studied using medium energy ion scattering spectroscopy (MEIS) and x-ray photoelectron spectroscopy (XPS). MEIS measurements after one single TMA pulse show that ∼65{\%} of the native oxide is reduced, confirmed by XPS measurement, and a 5 {\AA} thick oxygen-rich aluminum oxide layer is formed. This reduction occurs upon TMA exposure to as-received GaAs wafers.",
author = "Lee, {Hang Dong} and Tian Feng and Lei Yu and Daniel Mastrogiovanni and Alan Wan and Torgny Gustafsson and Eric Garfunkel",
year = "2009",
doi = "10.1063/1.3148723",
language = "English",
volume = "94",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "22",

}

TY - JOUR

T1 - Reduction of native oxides on GaAs during atomic layer growth of Al 2O3

AU - Lee, Hang Dong

AU - Feng, Tian

AU - Yu, Lei

AU - Mastrogiovanni, Daniel

AU - Wan, Alan

AU - Gustafsson, Torgny

AU - Garfunkel, Eric

PY - 2009

Y1 - 2009

N2 - The reduction of surface "native" oxides from GaAs substrates following reactions with trimethylaluminum (TMA) precursor is studied using medium energy ion scattering spectroscopy (MEIS) and x-ray photoelectron spectroscopy (XPS). MEIS measurements after one single TMA pulse show that ∼65% of the native oxide is reduced, confirmed by XPS measurement, and a 5 Å thick oxygen-rich aluminum oxide layer is formed. This reduction occurs upon TMA exposure to as-received GaAs wafers.

AB - The reduction of surface "native" oxides from GaAs substrates following reactions with trimethylaluminum (TMA) precursor is studied using medium energy ion scattering spectroscopy (MEIS) and x-ray photoelectron spectroscopy (XPS). MEIS measurements after one single TMA pulse show that ∼65% of the native oxide is reduced, confirmed by XPS measurement, and a 5 Å thick oxygen-rich aluminum oxide layer is formed. This reduction occurs upon TMA exposure to as-received GaAs wafers.

UR - http://www.scopus.com/inward/record.url?scp=66749167599&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=66749167599&partnerID=8YFLogxK

U2 - 10.1063/1.3148723

DO - 10.1063/1.3148723

M3 - Article

AN - SCOPUS:66749167599

VL - 94

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 22

M1 - 222108

ER -