Abstract
The reduction of surface "native" oxides from GaAs substrates following reactions with trimethylaluminum (TMA) precursor is studied using medium energy ion scattering spectroscopy (MEIS) and x-ray photoelectron spectroscopy (XPS). MEIS measurements after one single TMA pulse show that ∼65% of the native oxide is reduced, confirmed by XPS measurement, and a 5 Å thick oxygen-rich aluminum oxide layer is formed. This reduction occurs upon TMA exposure to as-received GaAs wafers.
Original language | English |
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Article number | 222108 |
Journal | Applied Physics Letters |
Volume | 94 |
Issue number | 22 |
DOIs | |
Publication status | Published - 2009 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)