Reduction of native oxides on GaAs during atomic layer growth of Al 2O3

Hang Dong Lee; Tian Feng; Lei Yu; Daniel Mastrogiovanni; Alan Wan; Torgny Gustafsson; Eric Garfunkel

doi:10.1063/1.3148723

Reduction of native oxides on GaAs during atomic layer growth of Al ₂O₃

Hang Dong Lee, Tian Feng, Lei Yu, Daniel Mastrogiovanni, Alan Wan, Torgny Gustafsson, Eric Garfunkel

Rutgers University

Research output: Contribution to journal › Article

72 Citations (Scopus)

Abstract

The reduction of surface "native" oxides from GaAs substrates following reactions with trimethylaluminum (TMA) precursor is studied using medium energy ion scattering spectroscopy (MEIS) and x-ray photoelectron spectroscopy (XPS). MEIS measurements after one single TMA pulse show that ∼65% of the native oxide is reduced, confirmed by XPS measurement, and a 5 Å thick oxygen-rich aluminum oxide layer is formed. This reduction occurs upon TMA exposure to as-received GaAs wafers.

Original language	English
Article number	222108
Journal	Applied Physics Letters
Volume	94
Issue number	22
DOIs	https://doi.org/10.1063/1.3148723
Publication status	Published - Jun 15 2009

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ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Cite this

Lee, H. D., Feng, T., Yu, L., Mastrogiovanni, D., Wan, A., Gustafsson, T., & Garfunkel, E. (2009). Reduction of native oxides on GaAs during atomic layer growth of Al ₂O₃. Applied Physics Letters, 94(22), [222108]. https://doi.org/10.1063/1.3148723

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10.1063/1.3148723