Abstract
The reduction of surface "native" oxides from GaAs substrates following reactions with trimethylaluminum (TMA) precursor is studied using medium energy ion scattering spectroscopy (MEIS) and x-ray photoelectron spectroscopy (XPS). MEIS measurements after one single TMA pulse show that ∼65% of the native oxide is reduced, confirmed by XPS measurement, and a 5 Å thick oxygen-rich aluminum oxide layer is formed. This reduction occurs upon TMA exposure to as-received GaAs wafers.
| Original language | English |
|---|---|
| Article number | 222108 |
| Journal | Applied Physics Letters |
| Volume | 94 |
| Issue number | 22 |
| DOIs | |
| Publication status | Published - 2009 |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
Reduction of native oxides on GaAs during atomic layer growth of Al 2O3 . / Lee, Hang Dong; Feng, Tian; Yu, Lei; Mastrogiovanni, Daniel; Wan, Alan; Gustafsson, Torgny; Garfunkel, Eric.
In: Applied Physics Letters, Vol. 94, No. 22, 222108, 2009.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Reduction of native oxides on GaAs during atomic layer growth of Al 2O3
AU - Lee, Hang Dong
AU - Feng, Tian
AU - Yu, Lei
AU - Mastrogiovanni, Daniel
AU - Wan, Alan
AU - Gustafsson, Torgny
AU - Garfunkel, Eric
PY - 2009
Y1 - 2009
N2 - The reduction of surface "native" oxides from GaAs substrates following reactions with trimethylaluminum (TMA) precursor is studied using medium energy ion scattering spectroscopy (MEIS) and x-ray photoelectron spectroscopy (XPS). MEIS measurements after one single TMA pulse show that ∼65% of the native oxide is reduced, confirmed by XPS measurement, and a 5 Å thick oxygen-rich aluminum oxide layer is formed. This reduction occurs upon TMA exposure to as-received GaAs wafers.
AB - The reduction of surface "native" oxides from GaAs substrates following reactions with trimethylaluminum (TMA) precursor is studied using medium energy ion scattering spectroscopy (MEIS) and x-ray photoelectron spectroscopy (XPS). MEIS measurements after one single TMA pulse show that ∼65% of the native oxide is reduced, confirmed by XPS measurement, and a 5 Å thick oxygen-rich aluminum oxide layer is formed. This reduction occurs upon TMA exposure to as-received GaAs wafers.
UR - http://www.scopus.com/inward/record.url?scp=66749167599&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=66749167599&partnerID=8YFLogxK
U2 - 10.1063/1.3148723
DO - 10.1063/1.3148723
M3 - Article
AN - SCOPUS:66749167599
VL - 94
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 22
M1 - 222108
ER -