Reduction of persistent photoconductivity in ZnO thin film transistor-based UV photodetector

Pavel Ivanoff Reyes; Chieh Jen Ku; Ziqing Duan; Yi Xu; Eric Garfunkel; Yicheng Lu

doi:10.1063/1.4737648

Reduction of persistent photoconductivity in ZnO thin film transistor-based UV photodetector

Pavel Ivanoff Reyes, Chieh Jen Ku, Ziqing Duan, Yi Xu, Eric Garfunkel, Yicheng Lu

Rutgers University

Research output: Contribution to journal › Article

55 Citations (Scopus)

Abstract

We report a ZnO-based thin film transistor UV photodetector with a back gate configuration. The thin-film transistor (TFT) aspect ratio W/L is 150 μm/5 μm and has a current on-off ratio of 10 ¹⁰. The detector shows UV-visible rejection ratio of 10 ⁴ and cut-off wavelength of 376 nm. The device has low dark current of 5 × 10 ^-14 A. The persistent photoconductivity is suppressed through oxygen plasma treatment of the channel surface which significantly reduces the density of oxygen vacancy confirmed by XPS measurements. The proper gate bias-control further reduces recovery time. The UV-TFT configuration is particularly suitable for making large-area imaging arrays.

Original language	English
Article number	031118
Journal	Applied Physics Letters
Volume	101
Issue number	3
DOIs	https://doi.org/10.1063/1.4737648
Publication status	Published - Jul 16 2012

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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Ivanoff Reyes, P., Ku, C. J., Duan, Z., Xu, Y., Garfunkel, E., & Lu, Y. (2012). Reduction of persistent photoconductivity in ZnO thin film transistor-based UV photodetector. Applied Physics Letters, 101(3), [031118]. https://doi.org/10.1063/1.4737648

@article{55c6d4fbe0344181b913a8cf3d823fe3,

title = "Reduction of persistent photoconductivity in ZnO thin film transistor-based UV photodetector",

abstract = "We report a ZnO-based thin film transistor UV photodetector with a back gate configuration. The thin-film transistor (TFT) aspect ratio W/L is 150 μm/5 μm and has a current on-off ratio of 10 10. The detector shows UV-visible rejection ratio of 10 4 and cut-off wavelength of 376 nm. The device has low dark current of 5 × 10 -14 A. The persistent photoconductivity is suppressed through oxygen plasma treatment of the channel surface which significantly reduces the density of oxygen vacancy confirmed by XPS measurements. The proper gate bias-control further reduces recovery time. The UV-TFT configuration is particularly suitable for making large-area imaging arrays.",

author = "{Ivanoff Reyes}, Pavel and Ku, {Chieh Jen} and Ziqing Duan and Yi Xu and Eric Garfunkel and Yicheng Lu",

year = "2012",

month = jul,

day = "16",

doi = "10.1063/1.4737648",

language = "English",

volume = "101",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "3",

}

TY - JOUR

T1 - Reduction of persistent photoconductivity in ZnO thin film transistor-based UV photodetector

AU - Ivanoff Reyes, Pavel

AU - Ku, Chieh Jen

AU - Duan, Ziqing

AU - Xu, Yi

AU - Garfunkel, Eric

AU - Lu, Yicheng

PY - 2012/7/16

Y1 - 2012/7/16

N2 - We report a ZnO-based thin film transistor UV photodetector with a back gate configuration. The thin-film transistor (TFT) aspect ratio W/L is 150 μm/5 μm and has a current on-off ratio of 10 10. The detector shows UV-visible rejection ratio of 10 4 and cut-off wavelength of 376 nm. The device has low dark current of 5 × 10 -14 A. The persistent photoconductivity is suppressed through oxygen plasma treatment of the channel surface which significantly reduces the density of oxygen vacancy confirmed by XPS measurements. The proper gate bias-control further reduces recovery time. The UV-TFT configuration is particularly suitable for making large-area imaging arrays.

AB - We report a ZnO-based thin film transistor UV photodetector with a back gate configuration. The thin-film transistor (TFT) aspect ratio W/L is 150 μm/5 μm and has a current on-off ratio of 10 10. The detector shows UV-visible rejection ratio of 10 4 and cut-off wavelength of 376 nm. The device has low dark current of 5 × 10 -14 A. The persistent photoconductivity is suppressed through oxygen plasma treatment of the channel surface which significantly reduces the density of oxygen vacancy confirmed by XPS measurements. The proper gate bias-control further reduces recovery time. The UV-TFT configuration is particularly suitable for making large-area imaging arrays.

UR - http://www.scopus.com/inward/record.url?scp=84864245940&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84864245940&partnerID=8YFLogxK

U2 - 10.1063/1.4737648

DO - 10.1063/1.4737648

M3 - Article

AN - SCOPUS:84864245940

VL - 101

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 3

M1 - 031118

ER -