Reduction of persistent photoconductivity in ZnO thin film transistor-based UV photodetector

Pavel Ivanoff Reyes; Chieh Jen Ku; Ziqing Duan; Yi Xu; Eric Garfunkel; Yicheng Lu

doi:10.1063/1.4737648

Reduction of persistent photoconductivity in ZnO thin film transistor-based UV photodetector

Pavel Ivanoff Reyes, Chieh Jen Ku, Ziqing Duan, Yi Xu, Eric Garfunkel, Yicheng Lu

Rutgers University

Research output: Contribution to journal › Article › peer-review

57 Citations (Scopus)

Abstract

We report a ZnO-based thin film transistor UV photodetector with a back gate configuration. The thin-film transistor (TFT) aspect ratio W/L is 150 μm/5 μm and has a current on-off ratio of 10 ¹⁰. The detector shows UV-visible rejection ratio of 10 ⁴ and cut-off wavelength of 376 nm. The device has low dark current of 5 × 10 ^-14 A. The persistent photoconductivity is suppressed through oxygen plasma treatment of the channel surface which significantly reduces the density of oxygen vacancy confirmed by XPS measurements. The proper gate bias-control further reduces recovery time. The UV-TFT configuration is particularly suitable for making large-area imaging arrays.

Original language	English
Article number	031118
Journal	Applied Physics Letters
Volume	101
Issue number	3
DOIs	https://doi.org/10.1063/1.4737648
Publication status	Published - Jul 16 2012

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.4737648

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title = "Reduction of persistent photoconductivity in ZnO thin film transistor-based UV photodetector",

abstract = "We report a ZnO-based thin film transistor UV photodetector with a back gate configuration. The thin-film transistor (TFT) aspect ratio W/L is 150 μm/5 μm and has a current on-off ratio of 10 10. The detector shows UV-visible rejection ratio of 10 4 and cut-off wavelength of 376 nm. The device has low dark current of 5 × 10 -14 A. The persistent photoconductivity is suppressed through oxygen plasma treatment of the channel surface which significantly reduces the density of oxygen vacancy confirmed by XPS measurements. The proper gate bias-control further reduces recovery time. The UV-TFT configuration is particularly suitable for making large-area imaging arrays.",

author = "{Ivanoff Reyes}, Pavel and Ku, {Chieh Jen} and Ziqing Duan and Yi Xu and Eric Garfunkel and Yicheng Lu",

note = "Funding Information: This work has been supported in part by the AFOSR under FA9550-08-01-0452 and by the NSF under ECCS 1002178 and DMR-1006740. ",

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AU - Ivanoff Reyes, Pavel

AU - Ku, Chieh Jen

AU - Duan, Ziqing

AU - Xu, Yi

AU - Garfunkel, Eric

AU - Lu, Yicheng

N1 - Funding Information: This work has been supported in part by the AFOSR under FA9550-08-01-0452 and by the NSF under ECCS 1002178 and DMR-1006740.

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Y1 - 2012/7/16

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