Reduction of persistent photoconductivity in ZnO thin film transistor-based UV photodetector

Pavel Ivanoff Reyes, Chieh Jen Ku, Ziqing Duan, Yi Xu, Eric Garfunkel, Yicheng Lu

Research output: Contribution to journalArticle

52 Citations (Scopus)

Abstract

We report a ZnO-based thin film transistor UV photodetector with a back gate configuration. The thin-film transistor (TFT) aspect ratio W/L is 150 μm/5 μm and has a current on-off ratio of 10 10. The detector shows UV-visible rejection ratio of 10 4 and cut-off wavelength of 376 nm. The device has low dark current of 5 × 10 -14 A. The persistent photoconductivity is suppressed through oxygen plasma treatment of the channel surface which significantly reduces the density of oxygen vacancy confirmed by XPS measurements. The proper gate bias-control further reduces recovery time. The UV-TFT configuration is particularly suitable for making large-area imaging arrays.

Original languageEnglish
Article number031118
JournalApplied Physics Letters
Volume101
Issue number3
DOIs
Publication statusPublished - Jul 16 2012

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photoconductivity
photometers
transistors
thin films
oxygen plasma
configurations
dark current
rejection
aspect ratio
cut-off
recovery
detectors
oxygen
wavelengths

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Reduction of persistent photoconductivity in ZnO thin film transistor-based UV photodetector. / Ivanoff Reyes, Pavel; Ku, Chieh Jen; Duan, Ziqing; Xu, Yi; Garfunkel, Eric; Lu, Yicheng.

In: Applied Physics Letters, Vol. 101, No. 3, 031118, 16.07.2012.

Research output: Contribution to journalArticle

Ivanoff Reyes, Pavel ; Ku, Chieh Jen ; Duan, Ziqing ; Xu, Yi ; Garfunkel, Eric ; Lu, Yicheng. / Reduction of persistent photoconductivity in ZnO thin film transistor-based UV photodetector. In: Applied Physics Letters. 2012 ; Vol. 101, No. 3.
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