Abstract
We report a ZnO-based thin film transistor UV photodetector with a back gate configuration. The thin-film transistor (TFT) aspect ratio W/L is 150 μm/5 μm and has a current on-off ratio of 10 10. The detector shows UV-visible rejection ratio of 10 4 and cut-off wavelength of 376 nm. The device has low dark current of 5 × 10 -14 A. The persistent photoconductivity is suppressed through oxygen plasma treatment of the channel surface which significantly reduces the density of oxygen vacancy confirmed by XPS measurements. The proper gate bias-control further reduces recovery time. The UV-TFT configuration is particularly suitable for making large-area imaging arrays.
| Original language | English |
|---|---|
| Article number | 031118 |
| Journal | Applied Physics Letters |
| Volume | 101 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - Jul 16 2012 |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
Reduction of persistent photoconductivity in ZnO thin film transistor-based UV photodetector. / Ivanoff Reyes, Pavel; Ku, Chieh Jen; Duan, Ziqing; Xu, Yi; Garfunkel, Eric; Lu, Yicheng.
In: Applied Physics Letters, Vol. 101, No. 3, 031118, 16.07.2012.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Reduction of persistent photoconductivity in ZnO thin film transistor-based UV photodetector
AU - Ivanoff Reyes, Pavel
AU - Ku, Chieh Jen
AU - Duan, Ziqing
AU - Xu, Yi
AU - Garfunkel, Eric
AU - Lu, Yicheng
PY - 2012/7/16
Y1 - 2012/7/16
N2 - We report a ZnO-based thin film transistor UV photodetector with a back gate configuration. The thin-film transistor (TFT) aspect ratio W/L is 150 μm/5 μm and has a current on-off ratio of 10 10. The detector shows UV-visible rejection ratio of 10 4 and cut-off wavelength of 376 nm. The device has low dark current of 5 × 10 -14 A. The persistent photoconductivity is suppressed through oxygen plasma treatment of the channel surface which significantly reduces the density of oxygen vacancy confirmed by XPS measurements. The proper gate bias-control further reduces recovery time. The UV-TFT configuration is particularly suitable for making large-area imaging arrays.
AB - We report a ZnO-based thin film transistor UV photodetector with a back gate configuration. The thin-film transistor (TFT) aspect ratio W/L is 150 μm/5 μm and has a current on-off ratio of 10 10. The detector shows UV-visible rejection ratio of 10 4 and cut-off wavelength of 376 nm. The device has low dark current of 5 × 10 -14 A. The persistent photoconductivity is suppressed through oxygen plasma treatment of the channel surface which significantly reduces the density of oxygen vacancy confirmed by XPS measurements. The proper gate bias-control further reduces recovery time. The UV-TFT configuration is particularly suitable for making large-area imaging arrays.
UR - http://www.scopus.com/inward/record.url?scp=84864245940&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84864245940&partnerID=8YFLogxK
U2 - 10.1063/1.4737648
DO - 10.1063/1.4737648
M3 - Article
AN - SCOPUS:84864245940
VL - 101
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 3
M1 - 031118
ER -