Reduction of persistent photoconductivity in ZnO thin film transistor-based UV photodetector

Pavel Ivanoff Reyes; Chieh Jen Ku; Ziqing Duan; Yi Xu; Eric Garfunkel; Yicheng Lu

doi:10.1063/1.4737648

Reduction of persistent photoconductivity in ZnO thin film transistor-based UV photodetector

Pavel Ivanoff Reyes, Chieh Jen Ku, Ziqing Duan, Yi Xu, Eric Garfunkel, Yicheng Lu

Rutgers University

Research output: Contribution to journal › Article

54 Citations (Scopus)

Abstract

We report a ZnO-based thin film transistor UV photodetector with a back gate configuration. The thin-film transistor (TFT) aspect ratio W/L is 150 μm/5 μm and has a current on-off ratio of 10 ¹⁰. The detector shows UV-visible rejection ratio of 10 ⁴ and cut-off wavelength of 376 nm. The device has low dark current of 5 × 10 ^-14 A. The persistent photoconductivity is suppressed through oxygen plasma treatment of the channel surface which significantly reduces the density of oxygen vacancy confirmed by XPS measurements. The proper gate bias-control further reduces recovery time. The UV-TFT configuration is particularly suitable for making large-area imaging arrays.

Original language	English
Article number	031118
Journal	Applied Physics Letters
Volume	101
Issue number	3
DOIs	https://doi.org/10.1063/1.4737648
Publication status	Published - Jul 16 2012

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ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Cite this

Ivanoff Reyes, P., Ku, C. J., Duan, Z., Xu, Y., Garfunkel, E., & Lu, Y. (2012). Reduction of persistent photoconductivity in ZnO thin film transistor-based UV photodetector. Applied Physics Letters, 101(3), [031118]. https://doi.org/10.1063/1.4737648

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10.1063/1.4737648