Abstract
The application of atomic layer deposition (ALD) to metal-organic frameworks (MOFs) offers a promising new approach to synthesize designer functional materials with atomic precision. While ALD on flat substrates is well established, the complexity of the pore architecture and surface chemistry in MOFs present new challenges. Through in situ synchrotron X-ray powder diffraction, we visualize how the deposited atoms are localized and redistribute within the MOF during ALD. We demonstrate that the ALD is regioselective, with preferential deposition of oxy-Zn(II) species within the small pores of NU-1000. Complementary density functional calculations indicate that this startling regioselectivity is driven by dispersion interactions associated with the preferential adsorption sites for the organometallic precursors prior to reaction.
| Original language | English |
|---|---|
| Pages (from-to) | 13513-13516 |
| Number of pages | 4 |
| Journal | Journal of the American Chemical Society |
| Volume | 138 |
| Issue number | 41 |
| DOIs | |
| Publication status | Published - Oct 19 2016 |
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ASJC Scopus subject areas
- Catalysis
- Chemistry(all)
- Biochemistry
- Colloid and Surface Chemistry
Cite this
Regioselective Atomic Layer Deposition in Metal-Organic Frameworks Directed by Dispersion Interactions. / Gallington, Leighanne C.; Kim, In Soo; Liu, Wei Guang; Yakovenko, Andrey A.; Platero-Prats, Ana E.; Li, Zhanyong; Wang, Timothy C.; Hupp, Joseph T; Farha, Omar K.; Truhlar, Donald G.; Martinson, Alex B F; Chapman, Karena W.
In: Journal of the American Chemical Society, Vol. 138, No. 41, 19.10.2016, p. 13513-13516.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Regioselective Atomic Layer Deposition in Metal-Organic Frameworks Directed by Dispersion Interactions
AU - Gallington, Leighanne C.
AU - Kim, In Soo
AU - Liu, Wei Guang
AU - Yakovenko, Andrey A.
AU - Platero-Prats, Ana E.
AU - Li, Zhanyong
AU - Wang, Timothy C.
AU - Hupp, Joseph T
AU - Farha, Omar K.
AU - Truhlar, Donald G.
AU - Martinson, Alex B F
AU - Chapman, Karena W.
PY - 2016/10/19
Y1 - 2016/10/19
N2 - The application of atomic layer deposition (ALD) to metal-organic frameworks (MOFs) offers a promising new approach to synthesize designer functional materials with atomic precision. While ALD on flat substrates is well established, the complexity of the pore architecture and surface chemistry in MOFs present new challenges. Through in situ synchrotron X-ray powder diffraction, we visualize how the deposited atoms are localized and redistribute within the MOF during ALD. We demonstrate that the ALD is regioselective, with preferential deposition of oxy-Zn(II) species within the small pores of NU-1000. Complementary density functional calculations indicate that this startling regioselectivity is driven by dispersion interactions associated with the preferential adsorption sites for the organometallic precursors prior to reaction.
AB - The application of atomic layer deposition (ALD) to metal-organic frameworks (MOFs) offers a promising new approach to synthesize designer functional materials with atomic precision. While ALD on flat substrates is well established, the complexity of the pore architecture and surface chemistry in MOFs present new challenges. Through in situ synchrotron X-ray powder diffraction, we visualize how the deposited atoms are localized and redistribute within the MOF during ALD. We demonstrate that the ALD is regioselective, with preferential deposition of oxy-Zn(II) species within the small pores of NU-1000. Complementary density functional calculations indicate that this startling regioselectivity is driven by dispersion interactions associated with the preferential adsorption sites for the organometallic precursors prior to reaction.
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UR - http://www.scopus.com/inward/citedby.url?scp=84992197943&partnerID=8YFLogxK
U2 - 10.1021/jacs.6b08711
DO - 10.1021/jacs.6b08711
M3 - Article
VL - 138
SP - 13513
EP - 13516
JO - Journal of the American Chemical Society
JF - Journal of the American Chemical Society
SN - 0002-7863
IS - 41
ER -