Reinforced self-assembled nanodielectrics for high-performance transparent thin film transistors

Jun Liu, Jonathan W. Hennek, D. Bruce Buchholz, Young Geun Ha, Sujing Xie, Vinayak P. Dravid, Robert P.H. Chang, Antonio Facchetti, Tobin J. Marks

Research output: Contribution to journalArticlepeer-review

18 Citations (Scopus)


Reinforced self-assembled nano-dielectrics (R-SANDs) are fabricated by depositing a thin protective layer on high-capacitance SAND films, thus significantly improving SAND durability and expanding SAND compatibility with a broader range of semiconductor deposition techniques. Fully transparent TFTs with excellent field-effect mobilities â-140 cm2/ V·s and low operating voltages â-1.0 V are demonstrated by combining the R-SAND and an amorphous Zn-In-Sn-O transparent oxide semiconductor.

Original languageEnglish
Pages (from-to)992-997
Number of pages6
JournalAdvanced Materials
Issue number8
Publication statusPublished - Feb 22 2011


  • amorphous oxide
  • dielectric materials
  • hybrid materials
  • self-assembly
  • transparent thin-film transistors

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint Dive into the research topics of 'Reinforced self-assembled nanodielectrics for high-performance transparent thin film transistors'. Together they form a unique fingerprint.

Cite this