Reinforced self-assembled nanodielectrics for high-performance transparent thin film transistors

Jun Liu, Jonathan W. Hennek, D. Bruce Buchholz, Young Geun Ha, Sujing Xie, Vinayak P. Dravid, Robert P. H. Chang, Antonio Facchetti, Tobin J Marks

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

Reinforced self-assembled nano-dielectrics (R-SANDs) are fabricated by depositing a thin protective layer on high-capacitance SAND films, thus significantly improving SAND durability and expanding SAND compatibility with a broader range of semiconductor deposition techniques. Fully transparent TFTs with excellent field-effect mobilities â-140 cm2/ V·s and low operating voltages â-1.0 V are demonstrated by combining the R-SAND and an amorphous Zn-In-Sn-O transparent oxide semiconductor.

Original languageEnglish
Pages (from-to)992-997
Number of pages6
JournalAdvanced Materials
Volume23
Issue number8
DOIs
Publication statusPublished - Feb 22 2011

Fingerprint

Thin film transistors
Durability
Capacitance
Semiconductor materials
Electric potential
Oxide semiconductors

Keywords

  • amorphous oxide
  • dielectric materials
  • hybrid materials
  • self-assembly
  • transparent thin-film transistors

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Reinforced self-assembled nanodielectrics for high-performance transparent thin film transistors. / Liu, Jun; Hennek, Jonathan W.; Buchholz, D. Bruce; Ha, Young Geun; Xie, Sujing; Dravid, Vinayak P.; Chang, Robert P. H.; Facchetti, Antonio; Marks, Tobin J.

In: Advanced Materials, Vol. 23, No. 8, 22.02.2011, p. 992-997.

Research output: Contribution to journalArticle

Liu, Jun ; Hennek, Jonathan W. ; Buchholz, D. Bruce ; Ha, Young Geun ; Xie, Sujing ; Dravid, Vinayak P. ; Chang, Robert P. H. ; Facchetti, Antonio ; Marks, Tobin J. / Reinforced self-assembled nanodielectrics for high-performance transparent thin film transistors. In: Advanced Materials. 2011 ; Vol. 23, No. 8. pp. 992-997.
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