Relationship between electrical properties and crystallization of indium oxide thin films using ex-situ grazing-incidence wide-angle x-ray scattering

G. B. González, J. S. Okasinski, D. B. Buchholz, J. Boesso, J. D. Almer, L. Zeng, M. J. Bedzyk, Robert P. H. Chang

Research output: Contribution to journalArticle

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Abstract

Grazing-incidence, wide-angle x-ray scattering measurements were conducted on indium oxide thin films grown on silica substrates via pulsed laser deposition. Growth temperatures (TG) in this study ranged from −50 °C to 600 °C, in order to investigate the thermal effects on the film structure and its spatial homogeneity, as well as their relationship to electrical properties. Films grown below room temperature were amorphous, while films prepared at TG = 25 °C and above crystallized in the cubic bixbyite structure, and their crystalline fraction increased with deposition temperature. The electrical conductivity (σ) and electrical mobility (μ) were strongly enhanced at low deposition temperatures. For TG = 25 °C and 50 °C, a strong ⟨100⟩ preferred orientation (texture) occurred, but it decreased as the deposition temperature, and consequential crystallinity, increased. Higher variations in texture coefficients and in lattice parameters were measured at the film surface compared to the interior of the film, indicating strong microstructural gradients. At low crystallinity, the in-plane lattice spacing expanded, while the out-of-plane spacing contracted, and those values merged at TG = 400 °C, where high μ was measured. This directional difference in lattice spacing, or deviatoric strain, was linear as a function of both deposition temperature and the degree of crystallinity. The crystalline sample with TG = 100 °C had the lowest mobility, as well as film diffraction peaks which split into doublets. The deviatoric strains from these doublet peaks differ by a factor of four, supporting the presence of both a microstructure and strain gradient in this film. More isotropic films exhibit larger μ values, indicating that the microstructure directly correlates with electrical properties. These results provide valuable insights that can help to improve the desirable properties of indium oxide, as well as other transparent conducting oxides.

Original languageEnglish
Article number205306
JournalJournal of Applied Physics
Volume121
Issue number20
DOIs
Publication statusPublished - May 28 2017

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x ray scattering
grazing incidence
indium oxides
electrical properties
crystallization
thin films
crystallinity
spacing
textures
temperature
gradients
microstructure
pulsed laser deposition
homogeneity
temperature effects
lattice parameters
silicon dioxide
conduction
electrical resistivity
oxides

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Relationship between electrical properties and crystallization of indium oxide thin films using ex-situ grazing-incidence wide-angle x-ray scattering. / González, G. B.; Okasinski, J. S.; Buchholz, D. B.; Boesso, J.; Almer, J. D.; Zeng, L.; Bedzyk, M. J.; Chang, Robert P. H.

In: Journal of Applied Physics, Vol. 121, No. 20, 205306, 28.05.2017.

Research output: Contribution to journalArticle

González, G. B. ; Okasinski, J. S. ; Buchholz, D. B. ; Boesso, J. ; Almer, J. D. ; Zeng, L. ; Bedzyk, M. J. ; Chang, Robert P. H. / Relationship between electrical properties and crystallization of indium oxide thin films using ex-situ grazing-incidence wide-angle x-ray scattering. In: Journal of Applied Physics. 2017 ; Vol. 121, No. 20.
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