Reordering of reconstructed Si surfaces upon ge deposition at room temperature

H. J. Gossmann, Leonard C Feldman, W. M. Gibson

Research output: Contribution to journalArticle

41 Citations (Scopus)

Abstract

The behavior of the Si(111)-(7 × 7) and the Si(100)-(2 × 1) surfaces upon room-temperature deposition of Ge is investigated with Auger-electron spectroscopy, low-energy electron diffraction, and Rutherford backscattering channeling techniques. The Ge over-layers form a sharp, but highly disordered, interface with no indication of island formation. It is found that the Ge relieves the reconstruction of the Si(100)-(2 × 1) surface but not of the Si(111)-(7 × 7) surface.

Original languageEnglish
Pages (from-to)294-297
Number of pages4
JournalPhysical Review Letters
Volume53
Issue number3
DOIs
Publication statusPublished - 1984

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room temperature
surface temperature
Auger spectroscopy
electron spectroscopy
backscattering
indication
electron diffraction
energy

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Reordering of reconstructed Si surfaces upon ge deposition at room temperature. / Gossmann, H. J.; Feldman, Leonard C; Gibson, W. M.

In: Physical Review Letters, Vol. 53, No. 3, 1984, p. 294-297.

Research output: Contribution to journalArticle

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