The behavior of the Si(111)-(7 × 7) and the Si(100)-(2 × 1) surfaces upon room-temperature deposition of Ge is investigated with Auger-electron spectroscopy, low-energy electron diffraction, and Rutherford backscattering channeling techniques. The Ge over-layers form a sharp, but highly disordered, interface with no indication of island formation. It is found that the Ge relieves the reconstruction of the Si(100)-(2 × 1) surface but not of the Si(111)-(7 × 7) surface.
ASJC Scopus subject areas
- Physics and Astronomy(all)