Repeated epitaxial growth and transfer of arrays of patterned, vertically aligned, crystalline Si wires from a single Si(111) substrate

Joshua M. Spurgeon, Katherine E. Plass, Brendan M. Kayes, Bruce S. Brunschwig, Harry A. Atwater, Nathan S Lewis

Research output: Contribution to journalArticle

58 Citations (Scopus)

Abstract

Multiple arrays of Si wires were sequentially grown and transferred into a flexible polymer film from a single Si(111) wafer. After growth from a patterned, oxide-coated substrate, the wires were embedded in a polymer and then mechanically separated from the substrate, preserving the array structure in the film. The wire stubs that remained were selectively etched from the Si(111) surface to regenerate the patterned substrate. Then the growth catalyst was electrodeposited into the holes in the patterned oxide. Cycling through this set of steps allowed regrowth and polymer film transfer of several wire arrays from a single Si wafer.

Original languageEnglish
Article number032112
JournalApplied Physics Letters
Volume93
Issue number3
DOIs
Publication statusPublished - 2008

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wire
polymers
wafers
oxides
preserving
catalysts
cycles

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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Repeated epitaxial growth and transfer of arrays of patterned, vertically aligned, crystalline Si wires from a single Si(111) substrate. / Spurgeon, Joshua M.; Plass, Katherine E.; Kayes, Brendan M.; Brunschwig, Bruce S.; Atwater, Harry A.; Lewis, Nathan S.

In: Applied Physics Letters, Vol. 93, No. 3, 032112, 2008.

Research output: Contribution to journalArticle

Spurgeon, Joshua M. ; Plass, Katherine E. ; Kayes, Brendan M. ; Brunschwig, Bruce S. ; Atwater, Harry A. ; Lewis, Nathan S. / Repeated epitaxial growth and transfer of arrays of patterned, vertically aligned, crystalline Si wires from a single Si(111) substrate. In: Applied Physics Letters. 2008 ; Vol. 93, No. 3.
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