Resistivity and oxygen content of indium tin oxide films deposited at room temperature by pulsed-laser ablation

Y. Wu, C. H.M. Marée, R. F. Haglund, J. D. Hamilton, M. A. Morales Paliza, M. B. Huang, L. C. Feldman, R. A. Weller

Research output: Contribution to journalArticle

49 Citations (Scopus)

Abstract

The relationship between electrical and optical properties of indium titanium oxide (ITO) films fabricated by pulsed laser deposition was investigated at different partial pressure using Rutherford backscattering spectroscopy. Results showed that the lowest resistivity of the films was oxygen rich compared to the expected stoichiometric composition value. The electric resistivity was modeled, assuming that only the equilibrated fraction contributed to the low resistivity of the film. The model suggested that still lower resistivity ITO films may be produced with the use of inert buffer gas in addition to oxygen or by different geometry.

Original languageEnglish
Pages (from-to)991-994
Number of pages4
JournalJournal of Applied Physics
Volume86
Issue number2
DOIs
Publication statusPublished - 1999

    Fingerprint

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Wu, Y., Marée, C. H. M., Haglund, R. F., Hamilton, J. D., Morales Paliza, M. A., Huang, M. B., Feldman, L. C., & Weller, R. A. (1999). Resistivity and oxygen content of indium tin oxide films deposited at room temperature by pulsed-laser ablation. Journal of Applied Physics, 86(2), 991-994. https://doi.org/10.1063/1.370864