Resolving the Ga ad-dimer location and orientation on the Si(100) surface

Y. Qian, M. J. Bedzyk, S. Tang, Arthur J Freeman, G. E. Franklin

Research output: Contribution to journalArticle

31 Citations (Scopus)

Abstract

Quantitative x-ray standing wave measurements of the Ga ad-dimer bond length, orientation, and location for the Si(100)-(2 × 2):Ga surface combined with first-principles molecular cluster calculations on four different ad-dimer models lead to the conclusion that Ga atoms form ad-dimers which are aligned parallel to the underlying Si dimers and lie in between Si dimer rows at the valley bridge site.

Original languageEnglish
Pages (from-to)1521-1524
Number of pages4
JournalPhysical Review Letters
Volume73
Issue number11
DOIs
Publication statusPublished - 1994

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dimers
molecular clusters
standing waves
valleys
atoms
x rays

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Resolving the Ga ad-dimer location and orientation on the Si(100) surface. / Qian, Y.; Bedzyk, M. J.; Tang, S.; Freeman, Arthur J; Franklin, G. E.

In: Physical Review Letters, Vol. 73, No. 11, 1994, p. 1521-1524.

Research output: Contribution to journalArticle

Qian, Y. ; Bedzyk, M. J. ; Tang, S. ; Freeman, Arthur J ; Franklin, G. E. / Resolving the Ga ad-dimer location and orientation on the Si(100) surface. In: Physical Review Letters. 1994 ; Vol. 73, No. 11. pp. 1521-1524.
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