Resonant states in the electronic structure of the high performance thermoelectrics AgPbmSbTe2+m

The role of Ag-Sb microstructures

Daniel Bilc, S. D. Mahanti, Eric Quarez, Kuei Fang Hsu, Robert Pcionek, Mercouri G Kanatzidis

Research output: Contribution to journalArticle

130 Citations (Scopus)

Abstract

The electronic structure calculation based on gradient corrected density function theory were performed. The study was performed on a class of novel quanternary compounds on AgPbmSbTe2+m, which were found to be high temperature thermoelectrics. It was found that resonant states appear near the top of the valence and bottom of the conduction band of bulk PbTe when Ag and Sb replace Pb. It was also observed that the electronic structure near the gap depends on the microstructural arrangements of Ar-Sb atoms.

Original languageEnglish
JournalPhysical Review Letters
Volume93
Issue number14
DOIs
Publication statusPublished - Oct 1 2004

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electronic structure
microstructure
conduction bands
valence
gradients
atoms

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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Resonant states in the electronic structure of the high performance thermoelectrics AgPbmSbTe2+m : The role of Ag-Sb microstructures. / Bilc, Daniel; Mahanti, S. D.; Quarez, Eric; Hsu, Kuei Fang; Pcionek, Robert; Kanatzidis, Mercouri G.

In: Physical Review Letters, Vol. 93, No. 14, 01.10.2004.

Research output: Contribution to journalArticle

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