RE3Ga9Ge (RE=Y, Ce, Sm, Gd and Yb)

Compounds with an open three-dimensional polygallide framework synthesized from liquid gallium

Marina A. Zhuravleva, Mercouri G Kanatzidis

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21 Citations (Scopus)

Abstract

The RE3Ga9Ge compounds (RE=Y, Ce, Sm, Gd and Yb) were synthesized at 850°C in quantitative yield from reactions containing excess liquid Ga. The orthorhombic crystal structure is characterized by a unique three-dimensional open Ga framework with parallel straight tunnels. In the tunnels, inserted are arrays of the RE atoms together with interpenetrated monoatomic RE-Ga-Ge planes. A complex disordered arrangement of the RE and Ga atoms is observed in the monoatomic plane. Depending on the extent of disorder, the crystal structure could be presented either in a sub-cell (no ordering) or in a super-cell (partial ordering). Single-crystal X-ray data for Ce3Ga9Ge sub-structure: space group Immm, Z=2, cell parameters a=4.3400(12)Å; b=10.836(3)Å; and c=11.545(3)Å; super-structure: space group Cmma, Z=8, cell parameters a=8.680(3)Å; b=23.090(7)Å; and c=10.836(3)Å. The refinement based on the full-matrix least squares on Fo 2[I>2σ(I)] converged to final residuals R1/wR2=0.0226/0.0528 and 0.0729/0.1569 for the sub- and super-structures, respectively. The relationship between the disordered sub-structure and partially ordered super-structure is discussed. Magnetic susceptibility measurements show Curie-Weiss behavior at the temperatures above 30K with the negative Weiss constants Θ=-49(1) and-7.7K for Gd and Ce analogs, respectively. An antiferromagnetic transition is observed in the Gd analog at TN=26.1K. The μeff obtained for both analogs is close to the RE3+ free-ion value.

Original languageEnglish
Pages (from-to)280-292
Number of pages13
JournalJournal of Solid State Chemistry
Volume173
Issue number2
DOIs
Publication statusPublished - Jul 2003

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Gallium
gallium
Tunnels
Crystal structure
Atoms
Liquids
analogs
liquids
cells
Magnetic susceptibility
tunnels
Single crystals
Ions
X rays
crystal structure
atoms
disorders
magnetic permeability
Temperature
single crystals

Keywords

  • Gallium network
  • Intermettalic
  • Metallic flux
  • Superstructure

ASJC Scopus subject areas

  • Inorganic Chemistry
  • Physical and Theoretical Chemistry
  • Materials Chemistry

Cite this

@article{076c364e992e4c439083e0a9060d6d7a,
title = "RE3Ga9Ge (RE=Y, Ce, Sm, Gd and Yb): Compounds with an open three-dimensional polygallide framework synthesized from liquid gallium",
abstract = "The RE3Ga9Ge compounds (RE=Y, Ce, Sm, Gd and Yb) were synthesized at 850°C in quantitative yield from reactions containing excess liquid Ga. The orthorhombic crystal structure is characterized by a unique three-dimensional open Ga framework with parallel straight tunnels. In the tunnels, inserted are arrays of the RE atoms together with interpenetrated monoatomic RE-Ga-Ge planes. A complex disordered arrangement of the RE and Ga atoms is observed in the monoatomic plane. Depending on the extent of disorder, the crystal structure could be presented either in a sub-cell (no ordering) or in a super-cell (partial ordering). Single-crystal X-ray data for Ce3Ga9Ge sub-structure: space group Immm, Z=2, cell parameters a=4.3400(12){\AA}; b=10.836(3){\AA}; and c=11.545(3){\AA}; super-structure: space group Cmma, Z=8, cell parameters a=8.680(3){\AA}; b=23.090(7){\AA}; and c=10.836(3){\AA}. The refinement based on the full-matrix least squares on Fo 2[I>2σ(I)] converged to final residuals R1/wR2=0.0226/0.0528 and 0.0729/0.1569 for the sub- and super-structures, respectively. The relationship between the disordered sub-structure and partially ordered super-structure is discussed. Magnetic susceptibility measurements show Curie-Weiss behavior at the temperatures above 30K with the negative Weiss constants Θ=-49(1) and-7.7K for Gd and Ce analogs, respectively. An antiferromagnetic transition is observed in the Gd analog at TN=26.1K. The μeff obtained for both analogs is close to the RE3+ free-ion value.",
keywords = "Gallium network, Intermettalic, Metallic flux, Superstructure",
author = "Zhuravleva, {Marina A.} and Kanatzidis, {Mercouri G}",
year = "2003",
month = "7",
doi = "10.1016/S0022-4596(03)00057-4",
language = "English",
volume = "173",
pages = "280--292",
journal = "Journal of Solid State Chemistry",
issn = "0022-4596",
publisher = "Academic Press Inc.",
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TY - JOUR

T1 - RE3Ga9Ge (RE=Y, Ce, Sm, Gd and Yb)

T2 - Compounds with an open three-dimensional polygallide framework synthesized from liquid gallium

AU - Zhuravleva, Marina A.

AU - Kanatzidis, Mercouri G

PY - 2003/7

Y1 - 2003/7

N2 - The RE3Ga9Ge compounds (RE=Y, Ce, Sm, Gd and Yb) were synthesized at 850°C in quantitative yield from reactions containing excess liquid Ga. The orthorhombic crystal structure is characterized by a unique three-dimensional open Ga framework with parallel straight tunnels. In the tunnels, inserted are arrays of the RE atoms together with interpenetrated monoatomic RE-Ga-Ge planes. A complex disordered arrangement of the RE and Ga atoms is observed in the monoatomic plane. Depending on the extent of disorder, the crystal structure could be presented either in a sub-cell (no ordering) or in a super-cell (partial ordering). Single-crystal X-ray data for Ce3Ga9Ge sub-structure: space group Immm, Z=2, cell parameters a=4.3400(12)Å; b=10.836(3)Å; and c=11.545(3)Å; super-structure: space group Cmma, Z=8, cell parameters a=8.680(3)Å; b=23.090(7)Å; and c=10.836(3)Å. The refinement based on the full-matrix least squares on Fo 2[I>2σ(I)] converged to final residuals R1/wR2=0.0226/0.0528 and 0.0729/0.1569 for the sub- and super-structures, respectively. The relationship between the disordered sub-structure and partially ordered super-structure is discussed. Magnetic susceptibility measurements show Curie-Weiss behavior at the temperatures above 30K with the negative Weiss constants Θ=-49(1) and-7.7K for Gd and Ce analogs, respectively. An antiferromagnetic transition is observed in the Gd analog at TN=26.1K. The μeff obtained for both analogs is close to the RE3+ free-ion value.

AB - The RE3Ga9Ge compounds (RE=Y, Ce, Sm, Gd and Yb) were synthesized at 850°C in quantitative yield from reactions containing excess liquid Ga. The orthorhombic crystal structure is characterized by a unique three-dimensional open Ga framework with parallel straight tunnels. In the tunnels, inserted are arrays of the RE atoms together with interpenetrated monoatomic RE-Ga-Ge planes. A complex disordered arrangement of the RE and Ga atoms is observed in the monoatomic plane. Depending on the extent of disorder, the crystal structure could be presented either in a sub-cell (no ordering) or in a super-cell (partial ordering). Single-crystal X-ray data for Ce3Ga9Ge sub-structure: space group Immm, Z=2, cell parameters a=4.3400(12)Å; b=10.836(3)Å; and c=11.545(3)Å; super-structure: space group Cmma, Z=8, cell parameters a=8.680(3)Å; b=23.090(7)Å; and c=10.836(3)Å. The refinement based on the full-matrix least squares on Fo 2[I>2σ(I)] converged to final residuals R1/wR2=0.0226/0.0528 and 0.0729/0.1569 for the sub- and super-structures, respectively. The relationship between the disordered sub-structure and partially ordered super-structure is discussed. Magnetic susceptibility measurements show Curie-Weiss behavior at the temperatures above 30K with the negative Weiss constants Θ=-49(1) and-7.7K for Gd and Ce analogs, respectively. An antiferromagnetic transition is observed in the Gd analog at TN=26.1K. The μeff obtained for both analogs is close to the RE3+ free-ion value.

KW - Gallium network

KW - Intermettalic

KW - Metallic flux

KW - Superstructure

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U2 - 10.1016/S0022-4596(03)00057-4

DO - 10.1016/S0022-4596(03)00057-4

M3 - Article

VL - 173

SP - 280

EP - 292

JO - Journal of Solid State Chemistry

JF - Journal of Solid State Chemistry

SN - 0022-4596

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ER -