RE5Co4Si14(RE = Ho, Er, Tm, Yb): Silicides grown from Ga flux showing exceptional resistance to chemical and thermal attack

James R. Salvador, Christos Malliakas, Jeff R. Gour, Mercouri G. Kanatzidis

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The compounds RE5Co4Si14(RE = Ho, Er, Tm, and Yb) have been synthesized from a Ga flux and characterized by X-ray diffraction. They can also be made by direct combination of the elements with arc melt alloying. All crystallize in the Lu5Co4Si14structure type in the monoclinic space group P21/c with lattice parameters: a = 12.3765(15) Å, b = 7.8142(9) Å, c = 7.7330(9) Å, β= 98.867(2)°; a = 12.337(2) Å, b = 7.7990(14) Å, c = 7.7144(15) Å, β= 98.85(3)°; a = 12.3140(16) Å, b = 7.778(1) Å, c = 7.705(1) Å, β= 98.815(2)°; and a = 12.255(3) Å, b = 7.7537(16) Å, c = 7.6730(15) Å, β= 98.95(3)° for Ho5Co4Si14, Er5Co4Si14, Tm5Co4Si14, and Yb5Co4Si14, respectively. The compounds are composed of a dense Si/Co framework that is assembled from [Co4Si10] slabs and [Si4] zigzag chains. Crystals of the title compounds proved to be remarkably resistant to thermal oxidative attack (up to 1000° C) as well as chemical attack from concentrated mineral acids and bases. The origin of this behavior can be traced to the details of the crystal structure and the Si-rich nature of the crystal framework.

Original languageEnglish
Pages (from-to)1636-1645
Number of pages10
JournalChemistry of Materials
Issue number7
Publication statusPublished - Apr 5 2005


ASJC Scopus subject areas

  • Chemistry(all)
  • Chemical Engineering(all)
  • Materials Chemistry

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