Role of Doping Dependent Radiative and Non-radiative Recombination in Determining the Limiting Efficiencies of Silicon Solar Cells

Sisir Yalamanchili; Nathan S Lewis; Harry A. Atwater

doi:10.1109/PVSC.2018.8547758

Role of Doping Dependent Radiative and Non-radiative Recombination in Determining the Limiting Efficiencies of Silicon Solar Cells

Sisir Yalamanchili, Nathan S Lewis, Harry A. Atwater

California Institute of Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We show that increasing the bulk doping in a silicon based solar cell can increase the fraction of photo generated carriers that recombine radiatively at open circuit condition. This increases the maximum achievable open circuit voltage (Voc) in a solar cell At higher doping levels auger recombination and band gap narrowing effects dominate leading to a reduction in Voc. Therefore radiative and non-radiative recombinations at Voc determines the optimum doping of the bulk to maximize the performance especially in thin solar cells with increased surface area due to surface texturing.

Original language	English
Title of host publication	2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	3223-3226
Number of pages	4
ISBN (Electronic)	9781538685297
DOIs	https://doi.org/10.1109/PVSC.2018.8547758
Publication status	Published - Nov 26 2018
Event	7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - Waikoloa Village, United States Duration: Jun 10 2018 → Jun 15 2018

Publication series

Name	2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC

Other

Other	7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018
Country	United States
City	Waikoloa Village
Period	6/10/18 → 6/15/18

Keywords

limiting efficiency
photovoltaic cells
silicon

ASJC Scopus subject areas

Energy Engineering and Power Technology
Renewable Energy, Sustainability and the Environment
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/PVSC.2018.8547758

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Yalamanchili, S., Lewis, N. S., & Atwater, H. A. (2018). Role of Doping Dependent Radiative and Non-radiative Recombination in Determining the Limiting Efficiencies of Silicon Solar Cells. In 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC (pp. 3223-3226). [8547758] (2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2018.8547758

Role of Doping Dependent Radiative and Non-radiative Recombination in Determining the Limiting Efficiencies of Silicon Solar Cells. / Yalamanchili, Sisir; Lewis, Nathan S; Atwater, Harry A.

2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC. Institute of Electrical and Electronics Engineers Inc., 2018. p. 3223-3226 8547758 (2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Yalamanchili, S, Lewis, NS & Atwater, HA 2018, Role of Doping Dependent Radiative and Non-radiative Recombination in Determining the Limiting Efficiencies of Silicon Solar Cells. in 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC., 8547758, 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC, Institute of Electrical and Electronics Engineers Inc., pp. 3223-3226, 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018, Waikoloa Village, United States, 6/10/18. https://doi.org/10.1109/PVSC.2018.8547758

Yalamanchili S, Lewis NS, Atwater HA. Role of Doping Dependent Radiative and Non-radiative Recombination in Determining the Limiting Efficiencies of Silicon Solar Cells. In 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC. Institute of Electrical and Electronics Engineers Inc. 2018. p. 3223-3226. 8547758. (2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC). https://doi.org/10.1109/PVSC.2018.8547758

Yalamanchili, Sisir ; Lewis, Nathan S ; Atwater, Harry A. / Role of Doping Dependent Radiative and Non-radiative Recombination in Determining the Limiting Efficiencies of Silicon Solar Cells. 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 3223-3226 (2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC).

@inproceedings{bff088633b8444608ae9d15f0bce2117,

title = "Role of Doping Dependent Radiative and Non-radiative Recombination in Determining the Limiting Efficiencies of Silicon Solar Cells",

abstract = "We show that increasing the bulk doping in a silicon based solar cell can increase the fraction of photo generated carriers that recombine radiatively at open circuit condition. This increases the maximum achievable open circuit voltage (Voc) in a solar cell At higher doping levels auger recombination and band gap narrowing effects dominate leading to a reduction in Voc. Therefore radiative and non-radiative recombinations at Voc determines the optimum doping of the bulk to maximize the performance especially in thin solar cells with increased surface area due to surface texturing.",

keywords = "limiting efficiency, photovoltaic cells, silicon",

author = "Sisir Yalamanchili and Lewis, {Nathan S} and Atwater, {Harry A.}",

year = "2018",

month = nov,

day = "26",

doi = "10.1109/PVSC.2018.8547758",

language = "English",

series = "2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "3223--3226",

booktitle = "2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC",

note = "7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 ; Conference date: 10-06-2018 Through 15-06-2018",

}

TY - GEN

T1 - Role of Doping Dependent Radiative and Non-radiative Recombination in Determining the Limiting Efficiencies of Silicon Solar Cells

AU - Yalamanchili, Sisir

AU - Lewis, Nathan S

AU - Atwater, Harry A.

PY - 2018/11/26

Y1 - 2018/11/26

N2 - We show that increasing the bulk doping in a silicon based solar cell can increase the fraction of photo generated carriers that recombine radiatively at open circuit condition. This increases the maximum achievable open circuit voltage (Voc) in a solar cell At higher doping levels auger recombination and band gap narrowing effects dominate leading to a reduction in Voc. Therefore radiative and non-radiative recombinations at Voc determines the optimum doping of the bulk to maximize the performance especially in thin solar cells with increased surface area due to surface texturing.

AB - We show that increasing the bulk doping in a silicon based solar cell can increase the fraction of photo generated carriers that recombine radiatively at open circuit condition. This increases the maximum achievable open circuit voltage (Voc) in a solar cell At higher doping levels auger recombination and band gap narrowing effects dominate leading to a reduction in Voc. Therefore radiative and non-radiative recombinations at Voc determines the optimum doping of the bulk to maximize the performance especially in thin solar cells with increased surface area due to surface texturing.

KW - limiting efficiency

KW - photovoltaic cells

KW - silicon

UR - http://www.scopus.com/inward/record.url?scp=85059900121&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85059900121&partnerID=8YFLogxK

U2 - 10.1109/PVSC.2018.8547758

DO - 10.1109/PVSC.2018.8547758

M3 - Conference contribution

AN - SCOPUS:85059900121

T3 - 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC

SP - 3223

EP - 3226

BT - 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018

Y2 - 10 June 2018 through 15 June 2018

ER -