Role of gallium doping in dramatically lowering amorphous-oxide processing temperatures for solution-derived indium zinc oxide thin-film transistors

Sunho Jeong, Young Geun Ha, Jooho Moon, Antonio Facchetti, Tobin J Marks

Research output: Contribution to journalArticle

377 Citations (Scopus)

Abstract

Ga doping in indium zinc oxide (IZO)based amorphous-oxide semiconductors (AOSs) promotes the formation of oxidelattice structures with oxygen vacancies at low annealing temperatures, which is essential for acceptable thin-film-transistor performance (see figure). The mobility dependence on annealing temperature and AOS composition are analyzed and the chemical role of Ga is clarified, as required for solution-processed, lowtemperature-annealed AOSs.

Original languageEnglish
Pages (from-to)1346-1350
Number of pages5
JournalAdvanced Materials
Volume22
Issue number12
DOIs
Publication statusPublished - Mar 26 2010

Fingerprint

Zinc Oxide
Amorphous semiconductors
Gallium
Indium
Thin film transistors
Zinc oxide
Oxides
Oxide films
Doping (additives)
Processing
Annealing
Oxygen vacancies
Temperature
Chemical analysis
Oxide semiconductors

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Role of gallium doping in dramatically lowering amorphous-oxide processing temperatures for solution-derived indium zinc oxide thin-film transistors. / Jeong, Sunho; Ha, Young Geun; Moon, Jooho; Facchetti, Antonio; Marks, Tobin J.

In: Advanced Materials, Vol. 22, No. 12, 26.03.2010, p. 1346-1350.

Research output: Contribution to journalArticle

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