Role of hydrogen in silicon wafer bonding: an infrared study

M. K. Weldon; Y. J. Chabal; S. B. Christman; J. Bourcereau; C. A. Goodwin; C. M. Hsieh; S. Nakahara; R. H. Shanaman; W. G. Easter; L. C. Feldman

Role of hydrogen in silicon wafer bonding: an infrared study

M. K. Weldon, Y. J. Chabal, S. B. Christman, J. Bourcereau, C. A. Goodwin, C. M. Hsieh, S. Nakahara, R. H. Shanaman, W. G. Easter, L. C. Feldman

Rutgers University

Research output: Contribution to conference › Paper

Abstract

Infrared absorption spectroscopy (IRAS) is used to probe the chemical purity of joint silicon wafer surfaces immediately prior to bonding and the wafer interface right after joining. The IRAS technique can give partial chemical information, particularly for hydrogen, and can also indicate the nature of the interactions. Experimentally, the surfaces of Si wafers are probed in two ways: either with multiple internal reflections (MIR) using the wafer itself to trap the IR radiation, or with MIR using a germanium plate to trap the IR radiation. To probe the interface of joined wafers, the technique of multiple internal transmission is used using the joined Si wafers themselves to trap the IR radiation. This configuration is again limited to frequencies above 1500 cm^-2, but its sensitivity to vibrations perpendicular to the interface is 20 times that of MIR.

Original language	English
Pages	168-169
Number of pages	2
Publication status	Published - Dec 1 1995
Event	Proceedings of the 1995 IEEE International SOI Conference - Tucson, AZ, USA Duration: Oct 3 1995 → Oct 5 1995

Other

Other	Proceedings of the 1995 IEEE International SOI Conference
City	Tucson, AZ, USA
Period	10/3/95 → 10/5/95

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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Weldon, M. K., Chabal, Y. J., Christman, S. B., Bourcereau, J., Goodwin, C. A., Hsieh, C. M., Nakahara, S., Shanaman, R. H., Easter, W. G., & Feldman, L. C. (1995). Role of hydrogen in silicon wafer bonding: an infrared study. 168-169. Paper presented at Proceedings of the 1995 IEEE International SOI Conference, Tucson, AZ, USA, .

Role of hydrogen in silicon wafer bonding : an infrared study. / Weldon, M. K.; Chabal, Y. J.; Christman, S. B.; Bourcereau, J.; Goodwin, C. A.; Hsieh, C. M.; Nakahara, S.; Shanaman, R. H.; Easter, W. G.; Feldman, L. C.

1995. 168-169 Paper presented at Proceedings of the 1995 IEEE International SOI Conference, Tucson, AZ, USA, .

Research output: Contribution to conference › Paper

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title = "Role of hydrogen in silicon wafer bonding: an infrared study",

abstract = "Infrared absorption spectroscopy (IRAS) is used to probe the chemical purity of joint silicon wafer surfaces immediately prior to bonding and the wafer interface right after joining. The IRAS technique can give partial chemical information, particularly for hydrogen, and can also indicate the nature of the interactions. Experimentally, the surfaces of Si wafers are probed in two ways: either with multiple internal reflections (MIR) using the wafer itself to trap the IR radiation, or with MIR using a germanium plate to trap the IR radiation. To probe the interface of joined wafers, the technique of multiple internal transmission is used using the joined Si wafers themselves to trap the IR radiation. This configuration is again limited to frequencies above 1500 cm-2, but its sensitivity to vibrations perpendicular to the interface is 20 times that of MIR.",

author = "Weldon, {M. K.} and Chabal, {Y. J.} and Christman, {S. B.} and J. Bourcereau and Goodwin, {C. A.} and Hsieh, {C. M.} and S. Nakahara and Shanaman, {R. H.} and Easter, {W. G.} and Feldman, {L. C.}",

year = "1995",

month = dec,

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T2 - Proceedings of the 1995 IEEE International SOI Conference

AU - Weldon, M. K.

AU - Chabal, Y. J.

AU - Christman, S. B.

AU - Bourcereau, J.

AU - Goodwin, C. A.

AU - Hsieh, C. M.

AU - Nakahara, S.

AU - Shanaman, R. H.

AU - Easter, W. G.

AU - Feldman, L. C.

PY - 1995/12/1

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AB - Infrared absorption spectroscopy (IRAS) is used to probe the chemical purity of joint silicon wafer surfaces immediately prior to bonding and the wafer interface right after joining. The IRAS technique can give partial chemical information, particularly for hydrogen, and can also indicate the nature of the interactions. Experimentally, the surfaces of Si wafers are probed in two ways: either with multiple internal reflections (MIR) using the wafer itself to trap the IR radiation, or with MIR using a germanium plate to trap the IR radiation. To probe the interface of joined wafers, the technique of multiple internal transmission is used using the joined Si wafers themselves to trap the IR radiation. This configuration is again limited to frequencies above 1500 cm-2, but its sensitivity to vibrations perpendicular to the interface is 20 times that of MIR.

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