Abstract
Infrared absorption spectroscopy (IRAS) is used to probe the chemical purity of joint silicon wafer surfaces immediately prior to bonding and the wafer interface right after joining. The IRAS technique can give partial chemical information, particularly for hydrogen, and can also indicate the nature of the interactions. Experimentally, the surfaces of Si wafers are probed in two ways: either with multiple internal reflections (MIR) using the wafer itself to trap the IR radiation, or with MIR using a germanium plate to trap the IR radiation. To probe the interface of joined wafers, the technique of multiple internal transmission is used using the joined Si wafers themselves to trap the IR radiation. This configuration is again limited to frequencies above 1500 cm-2, but its sensitivity to vibrations perpendicular to the interface is 20 times that of MIR.
| Original language | English |
|---|---|
| Title of host publication | IEEE International SOI Conference |
| Editors | Anon |
| Publisher | IEEE |
| Pages | 168-169 |
| Number of pages | 2 |
| Publication status | Published - 1995 |
| Event | Proceedings of the 1995 IEEE International SOI Conference - Tucson, AZ, USA Duration: Oct 3 1995 → Oct 5 1995 |
Other
| Other | Proceedings of the 1995 IEEE International SOI Conference |
|---|---|
| City | Tucson, AZ, USA |
| Period | 10/3/95 → 10/5/95 |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
Cite this
Role of hydrogen in silicon wafer bonding : an infrared study. / Weldon, M. K.; Chabal, Y. J.; Christman, S. B.; Bourcereau, J.; Goodwin, C. A.; Hsieh, C. M.; Nakahara, S.; Shanaman, R. H.; Easter, W. G.; Feldman, Leonard C.
IEEE International SOI Conference. ed. / Anon. IEEE, 1995. p. 168-169.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Role of hydrogen in silicon wafer bonding
T2 - an infrared study
AU - Weldon, M. K.
AU - Chabal, Y. J.
AU - Christman, S. B.
AU - Bourcereau, J.
AU - Goodwin, C. A.
AU - Hsieh, C. M.
AU - Nakahara, S.
AU - Shanaman, R. H.
AU - Easter, W. G.
AU - Feldman, Leonard C
PY - 1995
Y1 - 1995
N2 - Infrared absorption spectroscopy (IRAS) is used to probe the chemical purity of joint silicon wafer surfaces immediately prior to bonding and the wafer interface right after joining. The IRAS technique can give partial chemical information, particularly for hydrogen, and can also indicate the nature of the interactions. Experimentally, the surfaces of Si wafers are probed in two ways: either with multiple internal reflections (MIR) using the wafer itself to trap the IR radiation, or with MIR using a germanium plate to trap the IR radiation. To probe the interface of joined wafers, the technique of multiple internal transmission is used using the joined Si wafers themselves to trap the IR radiation. This configuration is again limited to frequencies above 1500 cm-2, but its sensitivity to vibrations perpendicular to the interface is 20 times that of MIR.
AB - Infrared absorption spectroscopy (IRAS) is used to probe the chemical purity of joint silicon wafer surfaces immediately prior to bonding and the wafer interface right after joining. The IRAS technique can give partial chemical information, particularly for hydrogen, and can also indicate the nature of the interactions. Experimentally, the surfaces of Si wafers are probed in two ways: either with multiple internal reflections (MIR) using the wafer itself to trap the IR radiation, or with MIR using a germanium plate to trap the IR radiation. To probe the interface of joined wafers, the technique of multiple internal transmission is used using the joined Si wafers themselves to trap the IR radiation. This configuration is again limited to frequencies above 1500 cm-2, but its sensitivity to vibrations perpendicular to the interface is 20 times that of MIR.
UR - http://www.scopus.com/inward/record.url?scp=0029521889&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0029521889&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:0029521889
SP - 168
EP - 169
BT - IEEE International SOI Conference
A2 - Anon, null
PB - IEEE
ER -