Role of K/Bi disorder in the electronic structure of β -K2 Bi8 Se13

Khang Hoang, Aleksandra Tomic, S. D. Mahanti, Theodora Kyratsi, Duck Young Chung, S. H. Tessmer, Mercouri G Kanatzidis

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Abstract

We have carried out tunneling spectroscopy and first-principles studies for β -K2 Bi8 Se13, a promising thermoelectric material with partially disordered mixed K/Bi sites. The tunneling data, obtained with a scanning tunneling microscope (STM), show that the system is a semiconductor with a band gap of □0.4 eV and band-tail states near the valence-band top and the conduction-band bottom. First-principles calculations, on the other hand, show that β -K2 Bi8 Se13 can be semimetallic or semiconducting depending on the arrangements of the K and Bi atoms in the mixed sites. The electronic structure of β -K2 Bi8 Se13 near the band-gap region is largely determined by unbonded Sep states and states associated with strained bonds which are present due to K/Bi disorder and by the Bip-Sep hybridization which tends to drive the system toward metallicity. Among the different K/Bi arrangements investigated, we have identified a structural model (quasidisordered structure) that is able to satisfactorily reproduce the atomic and electronic structures of β -K2 Bi8 Se13; i.e., the local composition in the mixed channels as observed experimentally and the band gap and tails as seen in the STM measurements. We argue that transport properties of β -K2 Bi8 Se13 can be qualitatively understood in terms of the electronic structure obtained in calculations using the above structural model.

Original languageEnglish
Article number125112
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume80
Issue number12
DOIs
Publication statusPublished - Sep 15 2009

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Electronic structure
Energy gap
disorders
electronic structure
Microscopes
Scanning
Crystal atomic structure
Model structures
Valence bands
Conduction bands
Transport properties
microscopes
Spectroscopy
scanning
thermoelectric materials
Semiconductor materials
Atoms
atomic structure
metallicity
Chemical analysis

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

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Role of K/Bi disorder in the electronic structure of β -K2 Bi8 Se13. / Hoang, Khang; Tomic, Aleksandra; Mahanti, S. D.; Kyratsi, Theodora; Chung, Duck Young; Tessmer, S. H.; Kanatzidis, Mercouri G.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 80, No. 12, 125112, 15.09.2009.

Research output: Contribution to journalArticle

Hoang, Khang ; Tomic, Aleksandra ; Mahanti, S. D. ; Kyratsi, Theodora ; Chung, Duck Young ; Tessmer, S. H. ; Kanatzidis, Mercouri G. / Role of K/Bi disorder in the electronic structure of β -K2 Bi8 Se13. In: Physical Review B - Condensed Matter and Materials Physics. 2009 ; Vol. 80, No. 12.
@article{7c72fba23861467eb29f9abc302842b1,
title = "Role of K/Bi disorder in the electronic structure of β -K2 Bi8 Se13",
abstract = "We have carried out tunneling spectroscopy and first-principles studies for β -K2 Bi8 Se13, a promising thermoelectric material with partially disordered mixed K/Bi sites. The tunneling data, obtained with a scanning tunneling microscope (STM), show that the system is a semiconductor with a band gap of □0.4 eV and band-tail states near the valence-band top and the conduction-band bottom. First-principles calculations, on the other hand, show that β -K2 Bi8 Se13 can be semimetallic or semiconducting depending on the arrangements of the K and Bi atoms in the mixed sites. The electronic structure of β -K2 Bi8 Se13 near the band-gap region is largely determined by unbonded Sep states and states associated with strained bonds which are present due to K/Bi disorder and by the Bip-Sep hybridization which tends to drive the system toward metallicity. Among the different K/Bi arrangements investigated, we have identified a structural model (quasidisordered structure) that is able to satisfactorily reproduce the atomic and electronic structures of β -K2 Bi8 Se13; i.e., the local composition in the mixed channels as observed experimentally and the band gap and tails as seen in the STM measurements. We argue that transport properties of β -K2 Bi8 Se13 can be qualitatively understood in terms of the electronic structure obtained in calculations using the above structural model.",
author = "Khang Hoang and Aleksandra Tomic and Mahanti, {S. D.} and Theodora Kyratsi and Chung, {Duck Young} and Tessmer, {S. H.} and Kanatzidis, {Mercouri G}",
year = "2009",
month = "9",
day = "15",
doi = "10.1103/PhysRevB.80.125112",
language = "English",
volume = "80",
journal = "Physical Review B-Condensed Matter",
issn = "1098-0121",
publisher = "American Physical Society",
number = "12",

}

TY - JOUR

T1 - Role of K/Bi disorder in the electronic structure of β -K2 Bi8 Se13

AU - Hoang, Khang

AU - Tomic, Aleksandra

AU - Mahanti, S. D.

AU - Kyratsi, Theodora

AU - Chung, Duck Young

AU - Tessmer, S. H.

AU - Kanatzidis, Mercouri G

PY - 2009/9/15

Y1 - 2009/9/15

N2 - We have carried out tunneling spectroscopy and first-principles studies for β -K2 Bi8 Se13, a promising thermoelectric material with partially disordered mixed K/Bi sites. The tunneling data, obtained with a scanning tunneling microscope (STM), show that the system is a semiconductor with a band gap of □0.4 eV and band-tail states near the valence-band top and the conduction-band bottom. First-principles calculations, on the other hand, show that β -K2 Bi8 Se13 can be semimetallic or semiconducting depending on the arrangements of the K and Bi atoms in the mixed sites. The electronic structure of β -K2 Bi8 Se13 near the band-gap region is largely determined by unbonded Sep states and states associated with strained bonds which are present due to K/Bi disorder and by the Bip-Sep hybridization which tends to drive the system toward metallicity. Among the different K/Bi arrangements investigated, we have identified a structural model (quasidisordered structure) that is able to satisfactorily reproduce the atomic and electronic structures of β -K2 Bi8 Se13; i.e., the local composition in the mixed channels as observed experimentally and the band gap and tails as seen in the STM measurements. We argue that transport properties of β -K2 Bi8 Se13 can be qualitatively understood in terms of the electronic structure obtained in calculations using the above structural model.

AB - We have carried out tunneling spectroscopy and first-principles studies for β -K2 Bi8 Se13, a promising thermoelectric material with partially disordered mixed K/Bi sites. The tunneling data, obtained with a scanning tunneling microscope (STM), show that the system is a semiconductor with a band gap of □0.4 eV and band-tail states near the valence-band top and the conduction-band bottom. First-principles calculations, on the other hand, show that β -K2 Bi8 Se13 can be semimetallic or semiconducting depending on the arrangements of the K and Bi atoms in the mixed sites. The electronic structure of β -K2 Bi8 Se13 near the band-gap region is largely determined by unbonded Sep states and states associated with strained bonds which are present due to K/Bi disorder and by the Bip-Sep hybridization which tends to drive the system toward metallicity. Among the different K/Bi arrangements investigated, we have identified a structural model (quasidisordered structure) that is able to satisfactorily reproduce the atomic and electronic structures of β -K2 Bi8 Se13; i.e., the local composition in the mixed channels as observed experimentally and the band gap and tails as seen in the STM measurements. We argue that transport properties of β -K2 Bi8 Se13 can be qualitatively understood in terms of the electronic structure obtained in calculations using the above structural model.

UR - http://www.scopus.com/inward/record.url?scp=70350641042&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=70350641042&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.80.125112

DO - 10.1103/PhysRevB.80.125112

M3 - Article

VL - 80

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 1098-0121

IS - 12

M1 - 125112

ER -