Role of Ostwald ripening in islanding processes

M. Zinke-Allmang, Leonard C Feldman, S. Nakahara

Research output: Contribution to journalArticle

63 Citations (Scopus)

Abstract

We report measurements of the rate of growth of Ga and Sn clusters on clean Si surfaces. The volume rate of growth is linearly dependent on time, consistent with an Ostwald ripening mechanism for island growth. Activation energies for clustering, extracted from the temperature dependence, are shown to be sensitive to the underlying surface structure. This thermodynamical approach to the description of cluster formation is generally useful in determining the operational parameters and ultimate limits to heterostructure growth.

Original languageEnglish
Pages (from-to)975-977
Number of pages3
JournalApplied Physics Letters
Volume51
Issue number13
DOIs
Publication statusPublished - 1987

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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