Abstract
The initial stages of interface formation are critical to the successful molecular beam epitaxial growth of semiconductor structures. The initial step involves the deposition of semiconductor material onto a reconstructed surface, where atomic positions can be very different from the 'bulk-like' configuration. Under the proper conditions this reconstructed surface 'reorders' giving rise to a well-ordered interface. The authors report measurements of this reordering phenomena as a function of temperature for Ge ans Si epitaxy on Si(100) and Si(111).
| Original language | English |
|---|---|
| Title of host publication | Electrochemical Society Extended Abstracts |
| Publisher | Electrochemical Soc |
| Pages | 209-210 |
| Number of pages | 2 |
| Volume | 85-1 |
| Publication status | Published - 1985 |
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ASJC Scopus subject areas
- Engineering(all)
Cite this
ROLE OF SURFACE RECONSTRUCTION IN Si AND Ge MBE ON Si. / Gossmann, H. J.; Feldman, Leonard C.
Electrochemical Society Extended Abstracts. Vol. 85-1 Electrochemical Soc, 1985. p. 209-210.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - ROLE OF SURFACE RECONSTRUCTION IN Si AND Ge MBE ON Si.
AU - Gossmann, H. J.
AU - Feldman, Leonard C
PY - 1985
Y1 - 1985
N2 - The initial stages of interface formation are critical to the successful molecular beam epitaxial growth of semiconductor structures. The initial step involves the deposition of semiconductor material onto a reconstructed surface, where atomic positions can be very different from the 'bulk-like' configuration. Under the proper conditions this reconstructed surface 'reorders' giving rise to a well-ordered interface. The authors report measurements of this reordering phenomena as a function of temperature for Ge ans Si epitaxy on Si(100) and Si(111).
AB - The initial stages of interface formation are critical to the successful molecular beam epitaxial growth of semiconductor structures. The initial step involves the deposition of semiconductor material onto a reconstructed surface, where atomic positions can be very different from the 'bulk-like' configuration. Under the proper conditions this reconstructed surface 'reorders' giving rise to a well-ordered interface. The authors report measurements of this reordering phenomena as a function of temperature for Ge ans Si epitaxy on Si(100) and Si(111).
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UR - http://www.scopus.com/inward/citedby.url?scp=0021886899&partnerID=8YFLogxK
M3 - Conference contribution
VL - 85-1
SP - 209
EP - 210
BT - Electrochemical Society Extended Abstracts
PB - Electrochemical Soc
ER -