ROLE OF SURFACE RECONSTRUCTION IN Si AND Ge MBE ON Si.

H. J. Gossmann; Leonard C Feldman

ROLE OF SURFACE RECONSTRUCTION IN Si AND Ge MBE ON Si.

Rutgers University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The initial stages of interface formation are critical to the successful molecular beam epitaxial growth of semiconductor structures. The initial step involves the deposition of semiconductor material onto a reconstructed surface, where atomic positions can be very different from the 'bulk-like' configuration. Under the proper conditions this reconstructed surface 'reorders' giving rise to a well-ordered interface. The authors report measurements of this reordering phenomena as a function of temperature for Ge ans Si epitaxy on Si(100) and Si(111).

Original language	English
Title of host publication	Electrochemical Society Extended Abstracts
Publisher	Electrochemical Soc
Pages	209-210
Number of pages	2
Volume	85-1
Publication status	Published - 1985

ASJC Scopus subject areas

Engineering(all)

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Cite this

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title = "ROLE OF SURFACE RECONSTRUCTION IN Si AND Ge MBE ON Si.",

abstract = "The initial stages of interface formation are critical to the successful molecular beam epitaxial growth of semiconductor structures. The initial step involves the deposition of semiconductor material onto a reconstructed surface, where atomic positions can be very different from the 'bulk-like' configuration. Under the proper conditions this reconstructed surface 'reorders' giving rise to a well-ordered interface. The authors report measurements of this reordering phenomena as a function of temperature for Ge ans Si epitaxy on Si(100) and Si(111).",

author = "Gossmann, {H. J.} and Feldman, {Leonard C}",

year = "1985",

language = "English",

volume = "85-1",

pages = "209--210",

booktitle = "Electrochemical Society Extended Abstracts",

publisher = "Electrochemical Soc",

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AU - Gossmann, H. J.

AU - Feldman, Leonard C

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N2 - The initial stages of interface formation are critical to the successful molecular beam epitaxial growth of semiconductor structures. The initial step involves the deposition of semiconductor material onto a reconstructed surface, where atomic positions can be very different from the 'bulk-like' configuration. Under the proper conditions this reconstructed surface 'reorders' giving rise to a well-ordered interface. The authors report measurements of this reordering phenomena as a function of temperature for Ge ans Si epitaxy on Si(100) and Si(111).

AB - The initial stages of interface formation are critical to the successful molecular beam epitaxial growth of semiconductor structures. The initial step involves the deposition of semiconductor material onto a reconstructed surface, where atomic positions can be very different from the 'bulk-like' configuration. Under the proper conditions this reconstructed surface 'reorders' giving rise to a well-ordered interface. The authors report measurements of this reordering phenomena as a function of temperature for Ge ans Si epitaxy on Si(100) and Si(111).

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M3 - Conference contribution

AN - SCOPUS:0021886899

VL - 85-1

SP - 209

EP - 210

BT - Electrochemical Society Extended Abstracts

PB - Electrochemical Soc

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