Abstract
The initial stages of interface formation are critical to the successful molecular beam epitaxial growth of semiconductor structures. The initial step involves the deposition of semiconductor material onto a reconstructed surface, where atomic positions can be very different from the 'bulk-like' configuration. Under the proper conditions this reconstructed surface 'reorders' giving rise to a well-ordered interface. The authors report measurements of this reordering phenomena as a function of temperature for Ge ans Si epitaxy on Si(100) and Si(111).
| Original language | English |
|---|---|
| Title of host publication | Electrochemical Society Extended Abstracts |
| Publisher | Electrochemical Soc |
| Pages | 209-210 |
| Number of pages | 2 |
| Volume | 85-1 |
| Publication status | Published - 1985 |
ASJC Scopus subject areas
- Engineering(all)
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Gossmann, H. J., & Feldman, L. C. (1985). ROLE OF SURFACE RECONSTRUCTION IN Si AND Ge MBE ON Si. In Electrochemical Society Extended Abstracts (Vol. 85-1, pp. 209-210). Electrochemical Soc.