The initial stages of interface formation are critical to the successful molecular beam epitaxial growth of semiconductor structures. The initial step involves the deposition of semiconductor material onto a reconstructed surface, where atomic positions can be very different from the 'bulk-like' configuration. Under the proper conditions this reconstructed surface 'reorders' giving rise to a well-ordered interface. The authors report measurements of this reordering phenomena as a function of temperature for Ge ans Si epitaxy on Si(100) and Si(111).
|Title of host publication||Electrochemical Society Extended Abstracts|
|Number of pages||2|
|Publication status||Published - 1985|
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