ROLE OF SURFACE RECONSTRUCTION IN Si AND Ge MBE ON Si.

H. J. Gossmann, Leonard C Feldman

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The initial stages of interface formation are critical to the successful molecular beam epitaxial growth of semiconductor structures. The initial step involves the deposition of semiconductor material onto a reconstructed surface, where atomic positions can be very different from the 'bulk-like' configuration. Under the proper conditions this reconstructed surface 'reorders' giving rise to a well-ordered interface. The authors report measurements of this reordering phenomena as a function of temperature for Ge ans Si epitaxy on Si(100) and Si(111).

Original languageEnglish
Title of host publicationElectrochemical Society Extended Abstracts
PublisherElectrochemical Soc
Pages209-210
Number of pages2
Volume85-1
Publication statusPublished - 1985

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ASJC Scopus subject areas

  • Engineering(all)

Cite this

Gossmann, H. J., & Feldman, L. C. (1985). ROLE OF SURFACE RECONSTRUCTION IN Si AND Ge MBE ON Si. In Electrochemical Society Extended Abstracts (Vol. 85-1, pp. 209-210). Electrochemical Soc.