Abstract
The initial stages of interface formation are critical to the successful molecular beam epitaxial growth of semiconductor structures. The initial step involves the deposition of semiconductor material onto a reconstructed surface, where atomic positions can be very different from the 'bulk-like' configuration. Under the proper conditions this reconstructed surface 'reorders' giving rise to a well-ordered interface. The authors report measurements of this reordering phenomena as a function of temperature for Ge ans Si epitaxy on Si(100) and Si(111).
Original language | English |
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Title of host publication | Electrochemical Society Extended Abstracts |
Publisher | Electrochemical Soc |
Pages | 209-210 |
Number of pages | 2 |
Volume | 85-1 |
Publication status | Published - 1985 |
ASJC Scopus subject areas
- Engineering(all)