Abstract
The initial stages of interface formation are critical to the successful molecular beam epitaxial growth of semiconductor structures. The initial step involves the deposition of semiconductor material onto a reconstructed surface, where atomic positions can be very different from the 'bulk-like' configuration. Under the proper conditions this reconstructed surface 'reorders' giving rise to a well-ordered interface. We report measurements of this reordering phenomena as a function of temperature for Ge and Si epitaxy on Si(100) and Si(111) (1). The main tools used in our study are the surface sensitive probes of low energy electron diffraction (LEED) and high energy ion scattering Rutherford Backscattering - RBS)/Channeling.
| Original language | English |
|---|---|
| Title of host publication | Proceedings - The Electrochemical Society |
| Editors | John C. Bean, S.S. Iyer, E. Kasper, Y. Shiraki |
| Publisher | Electrochemical Soc |
| Pages | 349-351 |
| Number of pages | 3 |
| Volume | 85-7 |
| Publication status | Published - 1985 |
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ASJC Scopus subject areas
- Engineering(all)
Cite this
ROLE OF SURFACE RECONSTRUCTION IN Si AND Ge MBE ON Si. / Gossmann, H. J.; Feldman, Leonard C.
Proceedings - The Electrochemical Society. ed. / John C. Bean; S.S. Iyer; E. Kasper; Y. Shiraki. Vol. 85-7 Electrochemical Soc, 1985. p. 349-351.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - ROLE OF SURFACE RECONSTRUCTION IN Si AND Ge MBE ON Si.
AU - Gossmann, H. J.
AU - Feldman, Leonard C
PY - 1985
Y1 - 1985
N2 - The initial stages of interface formation are critical to the successful molecular beam epitaxial growth of semiconductor structures. The initial step involves the deposition of semiconductor material onto a reconstructed surface, where atomic positions can be very different from the 'bulk-like' configuration. Under the proper conditions this reconstructed surface 'reorders' giving rise to a well-ordered interface. We report measurements of this reordering phenomena as a function of temperature for Ge and Si epitaxy on Si(100) and Si(111) (1). The main tools used in our study are the surface sensitive probes of low energy electron diffraction (LEED) and high energy ion scattering Rutherford Backscattering - RBS)/Channeling.
AB - The initial stages of interface formation are critical to the successful molecular beam epitaxial growth of semiconductor structures. The initial step involves the deposition of semiconductor material onto a reconstructed surface, where atomic positions can be very different from the 'bulk-like' configuration. Under the proper conditions this reconstructed surface 'reorders' giving rise to a well-ordered interface. We report measurements of this reordering phenomena as a function of temperature for Ge and Si epitaxy on Si(100) and Si(111) (1). The main tools used in our study are the surface sensitive probes of low energy electron diffraction (LEED) and high energy ion scattering Rutherford Backscattering - RBS)/Channeling.
UR - http://www.scopus.com/inward/record.url?scp=17944398758&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=17944398758&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:17944398758
VL - 85-7
SP - 349
EP - 351
BT - Proceedings - The Electrochemical Society
A2 - Bean, John C.
A2 - Iyer, S.S.
A2 - Kasper, E.
A2 - Shiraki, Y.
PB - Electrochemical Soc
ER -