ROLE OF SURFACE RECONSTRUCTION IN Si AND Ge MBE ON Si.

H. J. Gossmann; Leonard C Feldman

ROLE OF SURFACE RECONSTRUCTION IN Si AND Ge MBE ON Si.

H. J. Gossmann, Leonard C Feldman

Rutgers University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

The initial stages of interface formation are critical to the successful molecular beam epitaxial growth of semiconductor structures. The initial step involves the deposition of semiconductor material onto a reconstructed surface, where atomic positions can be very different from the 'bulk-like' configuration. Under the proper conditions this reconstructed surface 'reorders' giving rise to a well-ordered interface. We report measurements of this reordering phenomena as a function of temperature for Ge and Si epitaxy on Si(100) and Si(111) (1). The main tools used in our study are the surface sensitive probes of low energy electron diffraction (LEED) and high energy ion scattering Rutherford Backscattering - RBS)/Channeling.

Original language	English
Title of host publication	Proceedings - The Electrochemical Society
Editors	John C. Bean, S.S. Iyer, E. Kasper, Y. Shiraki
Publisher	Electrochemical Soc
Pages	349-351
Number of pages	3
Volume	85-7
Publication status	Published - 1985

ASJC Scopus subject areas

Engineering(all)

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@inproceedings{d3da6eb88a894785b47c3f38bb2e44f7,

title = "ROLE OF SURFACE RECONSTRUCTION IN Si AND Ge MBE ON Si.",

abstract = "The initial stages of interface formation are critical to the successful molecular beam epitaxial growth of semiconductor structures. The initial step involves the deposition of semiconductor material onto a reconstructed surface, where atomic positions can be very different from the 'bulk-like' configuration. Under the proper conditions this reconstructed surface 'reorders' giving rise to a well-ordered interface. We report measurements of this reordering phenomena as a function of temperature for Ge and Si epitaxy on Si(100) and Si(111) (1). The main tools used in our study are the surface sensitive probes of low energy electron diffraction (LEED) and high energy ion scattering Rutherford Backscattering - RBS)/Channeling.",

author = "Gossmann, {H. J.} and Feldman, {Leonard C}",

year = "1985",

language = "English",

volume = "85-7",

pages = "349--351",

editor = "Bean, {John C.} and S.S. Iyer and E. Kasper and Y. Shiraki",

booktitle = "Proceedings - The Electrochemical Society",

publisher = "Electrochemical Soc",

}

TY - GEN

T1 - ROLE OF SURFACE RECONSTRUCTION IN Si AND Ge MBE ON Si.

AU - Gossmann, H. J.

AU - Feldman, Leonard C

PY - 1985

Y1 - 1985

N2 - The initial stages of interface formation are critical to the successful molecular beam epitaxial growth of semiconductor structures. The initial step involves the deposition of semiconductor material onto a reconstructed surface, where atomic positions can be very different from the 'bulk-like' configuration. Under the proper conditions this reconstructed surface 'reorders' giving rise to a well-ordered interface. We report measurements of this reordering phenomena as a function of temperature for Ge and Si epitaxy on Si(100) and Si(111) (1). The main tools used in our study are the surface sensitive probes of low energy electron diffraction (LEED) and high energy ion scattering Rutherford Backscattering - RBS)/Channeling.

AB - The initial stages of interface formation are critical to the successful molecular beam epitaxial growth of semiconductor structures. The initial step involves the deposition of semiconductor material onto a reconstructed surface, where atomic positions can be very different from the 'bulk-like' configuration. Under the proper conditions this reconstructed surface 'reorders' giving rise to a well-ordered interface. We report measurements of this reordering phenomena as a function of temperature for Ge and Si epitaxy on Si(100) and Si(111) (1). The main tools used in our study are the surface sensitive probes of low energy electron diffraction (LEED) and high energy ion scattering Rutherford Backscattering - RBS)/Channeling.

UR - http://www.scopus.com/inward/record.url?scp=17944398758&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=17944398758&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:17944398758

VL - 85-7

SP - 349

EP - 351

BT - Proceedings - The Electrochemical Society

A2 - Bean, John C.

A2 - Iyer, S.S.

A2 - Kasper, E.

A2 - Shiraki, Y.

PB - Electrochemical Soc

ER -

ROLE OF SURFACE RECONSTRUCTION IN Si AND Ge MBE ON Si.

Abstract

ASJC Scopus subject areas

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