ROLE OF SURFACE RECONSTRUCTION IN Si AND Ge MBE ON Si.

H. J. Gossmann, Leonard C Feldman

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

The initial stages of interface formation are critical to the successful molecular beam epitaxial growth of semiconductor structures. The initial step involves the deposition of semiconductor material onto a reconstructed surface, where atomic positions can be very different from the 'bulk-like' configuration. Under the proper conditions this reconstructed surface 'reorders' giving rise to a well-ordered interface. We report measurements of this reordering phenomena as a function of temperature for Ge and Si epitaxy on Si(100) and Si(111) (1). The main tools used in our study are the surface sensitive probes of low energy electron diffraction (LEED) and high energy ion scattering Rutherford Backscattering - RBS)/Channeling.

Original languageEnglish
Title of host publicationProceedings - The Electrochemical Society
EditorsJohn C. Bean, S.S. Iyer, E. Kasper, Y. Shiraki
PublisherElectrochemical Soc
Pages349-351
Number of pages3
Volume85-7
Publication statusPublished - 1985

ASJC Scopus subject areas

  • Engineering(all)

Fingerprint Dive into the research topics of 'ROLE OF SURFACE RECONSTRUCTION IN Si AND Ge MBE ON Si.'. Together they form a unique fingerprint.

  • Cite this

    Gossmann, H. J., & Feldman, L. C. (1985). ROLE OF SURFACE RECONSTRUCTION IN Si AND Ge MBE ON Si. In J. C. Bean, S. S. Iyer, E. Kasper, & Y. Shiraki (Eds.), Proceedings - The Electrochemical Society (Vol. 85-7, pp. 349-351). Electrochemical Soc.