Room Temperature Negative Differential Resistance through Individual Organic Molecules on Silicon Surfaces

Nathan P. Guisinger; Mark E. Greene; Rajiv Basu; Andrew S. Baluch; Mark C. Hersam

doi:10.1021/nl0348589

Room Temperature Negative Differential Resistance through Individual Organic Molecules on Silicon Surfaces

Nathan P. Guisinger, Mark E. Greene, Rajiv Basu, Andrew S. Baluch, Mark C. Hersam

Northwestern University

Research output: Contribution to journal › Article › peer-review

348 Citations (Scopus)

Abstract

Room temperature negative differential resistance (NDR) has been measured through individual organic molecules on degenerately doped Si(100) surfaces using ultrahigh vacuum scanning tunneling microscopy (STM). For styrene molecules on n-type Si(100), NDR is observed only for negative sample bias because positive sample bias leads to electron stimulated desorption. By replacing styrene with a saturated organic molecule (2,2,6,6-tetramethyl-1- piperidinyloxy), electron stimulated desorption is not observed at either bias polarity. In this case, NDR is observed only for negative sample bias on n-type Si(100) and for positive sample bias on p-type Si(100). This unique behavior is consistent with a resonant tunneling mechanism via molecular orbitals and opens new possibilities for silicon-based molecular electronic devices and chemical identification with STM at the single-molecule level.

Original language	English
Pages (from-to)	55-59
Number of pages	5
Journal	Nano letters
Volume	4
Issue number	1
DOIs	https://doi.org/10.1021/nl0348589
Publication status	Published - Jan 1 2004

ASJC Scopus subject areas

Bioengineering
Chemistry(all)
Materials Science(all)
Condensed Matter Physics
Mechanical Engineering

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abstract = "Room temperature negative differential resistance (NDR) has been measured through individual organic molecules on degenerately doped Si(100) surfaces using ultrahigh vacuum scanning tunneling microscopy (STM). For styrene molecules on n-type Si(100), NDR is observed only for negative sample bias because positive sample bias leads to electron stimulated desorption. By replacing styrene with a saturated organic molecule (2,2,6,6-tetramethyl-1- piperidinyloxy), electron stimulated desorption is not observed at either bias polarity. In this case, NDR is observed only for negative sample bias on n-type Si(100) and for positive sample bias on p-type Si(100). This unique behavior is consistent with a resonant tunneling mechanism via molecular orbitals and opens new possibilities for silicon-based molecular electronic devices and chemical identification with STM at the single-molecule level.",

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AU - Guisinger, Nathan P.

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AU - Baluch, Andrew S.

AU - Hersam, Mark C.

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N2 - Room temperature negative differential resistance (NDR) has been measured through individual organic molecules on degenerately doped Si(100) surfaces using ultrahigh vacuum scanning tunneling microscopy (STM). For styrene molecules on n-type Si(100), NDR is observed only for negative sample bias because positive sample bias leads to electron stimulated desorption. By replacing styrene with a saturated organic molecule (2,2,6,6-tetramethyl-1- piperidinyloxy), electron stimulated desorption is not observed at either bias polarity. In this case, NDR is observed only for negative sample bias on n-type Si(100) and for positive sample bias on p-type Si(100). This unique behavior is consistent with a resonant tunneling mechanism via molecular orbitals and opens new possibilities for silicon-based molecular electronic devices and chemical identification with STM at the single-molecule level.

AB - Room temperature negative differential resistance (NDR) has been measured through individual organic molecules on degenerately doped Si(100) surfaces using ultrahigh vacuum scanning tunneling microscopy (STM). For styrene molecules on n-type Si(100), NDR is observed only for negative sample bias because positive sample bias leads to electron stimulated desorption. By replacing styrene with a saturated organic molecule (2,2,6,6-tetramethyl-1- piperidinyloxy), electron stimulated desorption is not observed at either bias polarity. In this case, NDR is observed only for negative sample bias on n-type Si(100) and for positive sample bias on p-type Si(100). This unique behavior is consistent with a resonant tunneling mechanism via molecular orbitals and opens new possibilities for silicon-based molecular electronic devices and chemical identification with STM at the single-molecule level.

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Room Temperature Negative Differential Resistance through Individual Organic Molecules on Silicon Surfaces

Abstract

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