Abstract
Room temperature negative differential resistance (NDR) has been measured through individual organic molecules on degenerately doped Si(100) surfaces using ultrahigh vacuum scanning tunneling microscopy (STM). For styrene molecules on n-type Si(100), NDR is observed only for negative sample bias because positive sample bias leads to electron stimulated desorption. By replacing styrene with a saturated organic molecule (2,2,6,6-tetramethyl-1- piperidinyloxy), electron stimulated desorption is not observed at either bias polarity. In this case, NDR is observed only for negative sample bias on n-type Si(100) and for positive sample bias on p-type Si(100). This unique behavior is consistent with a resonant tunneling mechanism via molecular orbitals and opens new possibilities for silicon-based molecular electronic devices and chemical identification with STM at the single-molecule level.
| Original language | English |
|---|---|
| Pages (from-to) | 55-59 |
| Number of pages | 5 |
| Journal | Nano Letters |
| Volume | 4 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - Jan 2004 |
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ASJC Scopus subject areas
- Materials Science(all)
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Room Temperature Negative Differential Resistance through Individual Organic Molecules on Silicon Surfaces. / Guisinger, Nathan P.; Greene, Mark E.; Basu, Rajiv; Baluch, Andrew S.; Hersam, Mark C.
In: Nano Letters, Vol. 4, No. 1, 01.2004, p. 55-59.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Room Temperature Negative Differential Resistance through Individual Organic Molecules on Silicon Surfaces
AU - Guisinger, Nathan P.
AU - Greene, Mark E.
AU - Basu, Rajiv
AU - Baluch, Andrew S.
AU - Hersam, Mark C
PY - 2004/1
Y1 - 2004/1
N2 - Room temperature negative differential resistance (NDR) has been measured through individual organic molecules on degenerately doped Si(100) surfaces using ultrahigh vacuum scanning tunneling microscopy (STM). For styrene molecules on n-type Si(100), NDR is observed only for negative sample bias because positive sample bias leads to electron stimulated desorption. By replacing styrene with a saturated organic molecule (2,2,6,6-tetramethyl-1- piperidinyloxy), electron stimulated desorption is not observed at either bias polarity. In this case, NDR is observed only for negative sample bias on n-type Si(100) and for positive sample bias on p-type Si(100). This unique behavior is consistent with a resonant tunneling mechanism via molecular orbitals and opens new possibilities for silicon-based molecular electronic devices and chemical identification with STM at the single-molecule level.
AB - Room temperature negative differential resistance (NDR) has been measured through individual organic molecules on degenerately doped Si(100) surfaces using ultrahigh vacuum scanning tunneling microscopy (STM). For styrene molecules on n-type Si(100), NDR is observed only for negative sample bias because positive sample bias leads to electron stimulated desorption. By replacing styrene with a saturated organic molecule (2,2,6,6-tetramethyl-1- piperidinyloxy), electron stimulated desorption is not observed at either bias polarity. In this case, NDR is observed only for negative sample bias on n-type Si(100) and for positive sample bias on p-type Si(100). This unique behavior is consistent with a resonant tunneling mechanism via molecular orbitals and opens new possibilities for silicon-based molecular electronic devices and chemical identification with STM at the single-molecule level.
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UR - http://www.scopus.com/inward/citedby.url?scp=0842330466&partnerID=8YFLogxK
U2 - 10.1021/nl0348589
DO - 10.1021/nl0348589
M3 - Article
AN - SCOPUS:0842330466
VL - 4
SP - 55
EP - 59
JO - Nano Letters
JF - Nano Letters
SN - 1530-6984
IS - 1
ER -