Abstract
Room temperature negative differential resistance (NDR) has been measured through individual organic molecules on degenerately doped Si(100) surfaces using ultrahigh vacuum scanning tunneling microscopy (STM). For styrene molecules on n-type Si(100), NDR is observed only for negative sample bias because positive sample bias leads to electron stimulated desorption. By replacing styrene with a saturated organic molecule (2,2,6,6-tetramethyl-1- piperidinyloxy), electron stimulated desorption is not observed at either bias polarity. In this case, NDR is observed only for negative sample bias on n-type Si(100) and for positive sample bias on p-type Si(100). This unique behavior is consistent with a resonant tunneling mechanism via molecular orbitals and opens new possibilities for silicon-based molecular electronic devices and chemical identification with STM at the single-molecule level.
Original language | English |
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Pages (from-to) | 55-59 |
Number of pages | 5 |
Journal | Nano letters |
Volume | 4 |
Issue number | 1 |
DOIs | |
Publication status | Published - Jan 1 2004 |
ASJC Scopus subject areas
- Bioengineering
- Chemistry(all)
- Materials Science(all)
- Condensed Matter Physics
- Mechanical Engineering