Room temperature UV emission of MgxZn1-xO films

Yanbo Jin, Bei Zhang, Shuming Yang, Yongzhong Wang, Jing Chen, Huizhen Zhang, Chunhui Huang, Changqi Cao, H. Cao, Robert P. H. Chang

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Abstract

II-VI wide band-gap semiconductor ternary MgxZn1-xO nanocrystalline films have been successfully formed on conductive glass from ZnO powder by electrophoresis deposition (EDP). In comparison with ZnO powder, the MgxZn1-xO films presented a more preferential crystalline orientation. Room temperature (RT) PL spectra of MgxZn1-xO films revealed a stronger band-edge ultraviolet (UV) emission and a narrower FWMH of 13 nm than that of ZnO powder. The UV emission peak of MgxZn1-xO film is located at the range of 375-381 nm with a small blue shift from that of ZnO powder. In addition, the ratio of PL peak intensity of band-edge emission to the deep-level emission in MgxZn1-xO films reached as high as 135:1 while compared with 23:1 of ZnO powder under the same He-Cd laser excitation level. Consequently, these electrophoretic deposition (EPD) MgxZn1-xO films exhibited a good quality for excitonic emission at RT.

Original languageEnglish
Pages (from-to)409-413
Number of pages5
JournalSolid State Communications
Volume119
Issue number6
DOIs
Publication statusPublished - Jul 31 2001

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Keywords

  • A. Semiconductors
  • A. Thin film
  • C. X-ray scattering
  • E. Luminescence

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

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