Room temperature UV emission of MgxZn1-xO films

Yanbo Jin, Bei Zhang, Shuming Yang, Yongzhong Wang, Jing Chen, Huizhen Zhang, Chunhui Huang, Changqi Cao, H. Cao, Robert P. H. Chang

Research output: Contribution to journalArticle

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Abstract

II-VI wide band-gap semiconductor ternary MgxZn1-xO nanocrystalline films have been successfully formed on conductive glass from ZnO powder by electrophoresis deposition (EDP). In comparison with ZnO powder, the MgxZn1-xO films presented a more preferential crystalline orientation. Room temperature (RT) PL spectra of MgxZn1-xO films revealed a stronger band-edge ultraviolet (UV) emission and a narrower FWMH of 13 nm than that of ZnO powder. The UV emission peak of MgxZn1-xO film is located at the range of 375-381 nm with a small blue shift from that of ZnO powder. In addition, the ratio of PL peak intensity of band-edge emission to the deep-level emission in MgxZn1-xO films reached as high as 135:1 while compared with 23:1 of ZnO powder under the same He-Cd laser excitation level. Consequently, these electrophoretic deposition (EPD) MgxZn1-xO films exhibited a good quality for excitonic emission at RT.

Original languageEnglish
Pages (from-to)409-413
Number of pages5
JournalSolid State Communications
Volume119
Issue number6
DOIs
Publication statusPublished - Jul 31 2001

Fingerprint

ultraviolet emission
Powders
room temperature
Temperature
Laser excitation
electrophoresis
Electrophoresis
blue shift
Crystal orientation
Crystalline materials
broadband
Glass
glass
excitation
lasers

Keywords

  • A. Semiconductors
  • A. Thin film
  • C. X-ray scattering
  • E. Luminescence

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Room temperature UV emission of MgxZn1-xO films. / Jin, Yanbo; Zhang, Bei; Yang, Shuming; Wang, Yongzhong; Chen, Jing; Zhang, Huizhen; Huang, Chunhui; Cao, Changqi; Cao, H.; Chang, Robert P. H.

In: Solid State Communications, Vol. 119, No. 6, 31.07.2001, p. 409-413.

Research output: Contribution to journalArticle

Jin, Y, Zhang, B, Yang, S, Wang, Y, Chen, J, Zhang, H, Huang, C, Cao, C, Cao, H & Chang, RPH 2001, 'Room temperature UV emission of MgxZn1-xO films', Solid State Communications, vol. 119, no. 6, pp. 409-413. https://doi.org/10.1016/S0038-1098(01)00244-7
Jin Y, Zhang B, Yang S, Wang Y, Chen J, Zhang H et al. Room temperature UV emission of MgxZn1-xO films. Solid State Communications. 2001 Jul 31;119(6):409-413. https://doi.org/10.1016/S0038-1098(01)00244-7
Jin, Yanbo ; Zhang, Bei ; Yang, Shuming ; Wang, Yongzhong ; Chen, Jing ; Zhang, Huizhen ; Huang, Chunhui ; Cao, Changqi ; Cao, H. ; Chang, Robert P. H. / Room temperature UV emission of MgxZn1-xO films. In: Solid State Communications. 2001 ; Vol. 119, No. 6. pp. 409-413.
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AU - Huang, Chunhui

AU - Cao, Changqi

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AU - Chang, Robert P. H.

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N2 - II-VI wide band-gap semiconductor ternary MgxZn1-xO nanocrystalline films have been successfully formed on conductive glass from ZnO powder by electrophoresis deposition (EDP). In comparison with ZnO powder, the MgxZn1-xO films presented a more preferential crystalline orientation. Room temperature (RT) PL spectra of MgxZn1-xO films revealed a stronger band-edge ultraviolet (UV) emission and a narrower FWMH of 13 nm than that of ZnO powder. The UV emission peak of MgxZn1-xO film is located at the range of 375-381 nm with a small blue shift from that of ZnO powder. In addition, the ratio of PL peak intensity of band-edge emission to the deep-level emission in MgxZn1-xO films reached as high as 135:1 while compared with 23:1 of ZnO powder under the same He-Cd laser excitation level. Consequently, these electrophoretic deposition (EPD) MgxZn1-xO films exhibited a good quality for excitonic emission at RT.

AB - II-VI wide band-gap semiconductor ternary MgxZn1-xO nanocrystalline films have been successfully formed on conductive glass from ZnO powder by electrophoresis deposition (EDP). In comparison with ZnO powder, the MgxZn1-xO films presented a more preferential crystalline orientation. Room temperature (RT) PL spectra of MgxZn1-xO films revealed a stronger band-edge ultraviolet (UV) emission and a narrower FWMH of 13 nm than that of ZnO powder. The UV emission peak of MgxZn1-xO film is located at the range of 375-381 nm with a small blue shift from that of ZnO powder. In addition, the ratio of PL peak intensity of band-edge emission to the deep-level emission in MgxZn1-xO films reached as high as 135:1 while compared with 23:1 of ZnO powder under the same He-Cd laser excitation level. Consequently, these electrophoretic deposition (EPD) MgxZn1-xO films exhibited a good quality for excitonic emission at RT.

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