RUTHERFORD BACKSCATTERING AND CHANNELING ANALYSIS OF INTERFACES AND EPITAXIAL STRUCTURES.

Leonard C Feldman, J. M. Poate

Research output: Chapter in Book/Report/Conference proceedingConference contribution

13 Citations (Scopus)

Abstract

In this review the authors describe the fundamentals of the ion scattering approach and illustrate its use in four studies of solid interfaces and epitaxial systems, including interfaces between single crystals and amorphous layers, semiconductor/semiconductor interfaces, metal/semiconductor interfaces, and metal/metal epitaxial systems.

Original languageEnglish
Title of host publicationAnnual Review of Materials Science
PublisherAnnu Rev Inc
Pages149-176
Number of pages28
Volume12
Publication statusPublished - 1982

    Fingerprint

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Feldman, L. C., & Poate, J. M. (1982). RUTHERFORD BACKSCATTERING AND CHANNELING ANALYSIS OF INTERFACES AND EPITAXIAL STRUCTURES. In Annual Review of Materials Science (Vol. 12, pp. 149-176). Annu Rev Inc.