RUTHERFORD BACKSCATTERING AND CHANNELING ANALYSIS OF INTERFACES AND EPITAXIAL STRUCTURES.

Leonard C Feldman; J. M. Poate

RUTHERFORD BACKSCATTERING AND CHANNELING ANALYSIS OF INTERFACES AND EPITAXIAL STRUCTURES.

Leonard C Feldman, J. M. Poate

Rutgers University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

13 Citations (Scopus)

Abstract

In this review the authors describe the fundamentals of the ion scattering approach and illustrate its use in four studies of solid interfaces and epitaxial systems, including interfaces between single crystals and amorphous layers, semiconductor/semiconductor interfaces, metal/semiconductor interfaces, and metal/metal epitaxial systems.

Original language	English
Title of host publication	Annual Review of Materials Science
Publisher	Annu Rev Inc
Pages	149-176
Number of pages	28
Volume	12
Publication status	Published - 1982

ASJC Scopus subject areas

Materials Science(all)

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Cite this

@inproceedings{db6b682de21b488490fd50bbbcadbed0,

title = "RUTHERFORD BACKSCATTERING AND CHANNELING ANALYSIS OF INTERFACES AND EPITAXIAL STRUCTURES.",

abstract = "In this review the authors describe the fundamentals of the ion scattering approach and illustrate its use in four studies of solid interfaces and epitaxial systems, including interfaces between single crystals and amorphous layers, semiconductor/semiconductor interfaces, metal/semiconductor interfaces, and metal/metal epitaxial systems.",

author = "Feldman, {Leonard C} and Poate, {J. M.}",

year = "1982",

language = "English",

volume = "12",

pages = "149--176",

booktitle = "Annual Review of Materials Science",

publisher = "Annu Rev Inc",

}

TY - GEN

T1 - RUTHERFORD BACKSCATTERING AND CHANNELING ANALYSIS OF INTERFACES AND EPITAXIAL STRUCTURES.

AU - Feldman, Leonard C

AU - Poate, J. M.

PY - 1982

Y1 - 1982

N2 - In this review the authors describe the fundamentals of the ion scattering approach and illustrate its use in four studies of solid interfaces and epitaxial systems, including interfaces between single crystals and amorphous layers, semiconductor/semiconductor interfaces, metal/semiconductor interfaces, and metal/metal epitaxial systems.

AB - In this review the authors describe the fundamentals of the ion scattering approach and illustrate its use in four studies of solid interfaces and epitaxial systems, including interfaces between single crystals and amorphous layers, semiconductor/semiconductor interfaces, metal/semiconductor interfaces, and metal/metal epitaxial systems.

UR - http://www.scopus.com/inward/record.url?scp=0020003158&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0020003158&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0020003158

VL - 12

SP - 149

EP - 176

BT - Annual Review of Materials Science

PB - Annu Rev Inc

ER -