Abstract
In this review the authors describe the fundamentals of the ion scattering approach and illustrate its use in four studies of solid interfaces and epitaxial systems, including interfaces between single crystals and amorphous layers, semiconductor/semiconductor interfaces, metal/semiconductor interfaces, and metal/metal epitaxial systems.
| Original language | English |
|---|---|
| Title of host publication | Annual Review of Materials Science |
| Publisher | Annu Rev Inc |
| Pages | 149-176 |
| Number of pages | 28 |
| Volume | 12 |
| Publication status | Published - 1982 |
Fingerprint
ASJC Scopus subject areas
- Materials Science(all)
Cite this
Feldman, L. C., & Poate, J. M. (1982). RUTHERFORD BACKSCATTERING AND CHANNELING ANALYSIS OF INTERFACES AND EPITAXIAL STRUCTURES. In Annual Review of Materials Science (Vol. 12, pp. 149-176). Annu Rev Inc.