Abstract
Authors have employed Rutherford backscatting/channeling and transmission electron microscopy to study the epitaxial growth of BaF//2 vacuum deposited onto (100) and (111) surfaces of InP and Ge. They observed no epitaxy in BaF//2 on Ge(100), and only poor quality growth on InP(111). Both the BaF//2/InP(100) and BaF//2/Ge(111) systems show excellent epitaxy. For these latter two cases the epitaxial quality depends strongly on substrate temperature. Even though a large lattice mismatch exists TEM analysis indicates that for BaF//2/Ge(111) neither are there misfit dislocations at the interface nor is the structure coherent.
Original language | English |
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Pages (from-to) | 246-249 |
Number of pages | 4 |
Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
Volume | 1 |
Issue number | 2 |
DOIs | |
Publication status | Published - Jan 1 1982 |
Event | Proc of the Int Conf on Metastable and Modulated Semicond Struct - Pasadena, CA, USA Duration: Dec 6 1982 → Dec 10 1982 |
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering