Abstract
Authors have employed Rutherford backscatting/channeling and transmission electron microscopy to study the epitaxial growth of BaF//2 vacuum deposited onto (100) and (111) surfaces of InP and Ge. They observed no epitaxy in BaF//2 on Ge(100), and only poor quality growth on InP(111). Both the BaF//2/InP(100) and BaF//2/Ge(111) systems show excellent epitaxy. For these latter two cases the epitaxial quality depends strongly on substrate temperature. Even though a large lattice mismatch exists TEM analysis indicates that for BaF//2/Ge(111) neither are there misfit dislocations at the interface nor is the structure coherent.
| Original language | English |
|---|---|
| Pages (from-to) | 246-249 |
| Number of pages | 4 |
| Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
| Volume | 1 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - Apr 1982 |
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RUTHERFORD BACKSCATTERING/CHANNELING AND TRANSMISSION ELECTRON MICROSCOPY ANALYSIS OF EPITAXIAL BaF//2 FILMS ON Ge AND InP. / Phillips, J. M.; Feldman, Leonard C; Gibson, J. M.; McDonald, M. L.
In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 1, No. 2, 04.1982, p. 246-249.Research output: Contribution to journal › Article
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TY - JOUR
T1 - RUTHERFORD BACKSCATTERING/CHANNELING AND TRANSMISSION ELECTRON MICROSCOPY ANALYSIS OF EPITAXIAL BaF//2 FILMS ON Ge AND InP.
AU - Phillips, J. M.
AU - Feldman, Leonard C
AU - Gibson, J. M.
AU - McDonald, M. L.
PY - 1982/4
Y1 - 1982/4
N2 - Authors have employed Rutherford backscatting/channeling and transmission electron microscopy to study the epitaxial growth of BaF//2 vacuum deposited onto (100) and (111) surfaces of InP and Ge. They observed no epitaxy in BaF//2 on Ge(100), and only poor quality growth on InP(111). Both the BaF//2/InP(100) and BaF//2/Ge(111) systems show excellent epitaxy. For these latter two cases the epitaxial quality depends strongly on substrate temperature. Even though a large lattice mismatch exists TEM analysis indicates that for BaF//2/Ge(111) neither are there misfit dislocations at the interface nor is the structure coherent.
AB - Authors have employed Rutherford backscatting/channeling and transmission electron microscopy to study the epitaxial growth of BaF//2 vacuum deposited onto (100) and (111) surfaces of InP and Ge. They observed no epitaxy in BaF//2 on Ge(100), and only poor quality growth on InP(111). Both the BaF//2/InP(100) and BaF//2/Ge(111) systems show excellent epitaxy. For these latter two cases the epitaxial quality depends strongly on substrate temperature. Even though a large lattice mismatch exists TEM analysis indicates that for BaF//2/Ge(111) neither are there misfit dislocations at the interface nor is the structure coherent.
UR - http://www.scopus.com/inward/record.url?scp=0020115278&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0020115278&partnerID=8YFLogxK
U2 - 10.1116/1.582495
DO - 10.1116/1.582495
M3 - Article
VL - 1
SP - 246
EP - 249
JO - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena
JF - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena
SN - 1071-1023
IS - 2
ER -