RUTHERFORD BACKSCATTERING/CHANNELING AND TRANSMISSION ELECTRON MICROSCOPY ANALYSIS OF EPITAXIAL BaF2 FILMS ON Ge AND InP.

J. M. Phillips, L. C. Feldman, J. M. Gibson, M. L. McDonald

Research output: Contribution to journalConference article

20 Citations (Scopus)

Abstract

Authors have employed Rutherford backscatting/channeling and transmission electron microscopy to study the epitaxial growth of BaF//2 vacuum deposited onto (100) and (111) surfaces of InP and Ge. They observed no epitaxy in BaF//2 on Ge(100), and only poor quality growth on InP(111). Both the BaF//2/InP(100) and BaF//2/Ge(111) systems show excellent epitaxy. For these latter two cases the epitaxial quality depends strongly on substrate temperature. Even though a large lattice mismatch exists TEM analysis indicates that for BaF//2/Ge(111) neither are there misfit dislocations at the interface nor is the structure coherent.

Original languageEnglish
Pages (from-to)246-249
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume1
Issue number2
DOIs
Publication statusPublished - Jan 1 1982
EventProc of the Int Conf on Metastable and Modulated Semicond Struct - Pasadena, CA, USA
Duration: Dec 6 1982Dec 10 1982

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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