RUTHERFORD BACKSCATTERING/CHANNELING AND TRANSMISSION ELECTRON MICROSCOPY ANALYSIS OF EPITAXIAL BaF2 FILMS ON Ge AND InP.

J. M. Phillips; L. C. Feldman; J. M. Gibson; M. L. McDonald

doi:10.1116/1.582495

RUTHERFORD BACKSCATTERING/CHANNELING AND TRANSMISSION ELECTRON MICROSCOPY ANALYSIS OF EPITAXIAL BaF₂ FILMS ON Ge AND InP.

J. M. Phillips, L. C. Feldman, J. M. Gibson, M. L. McDonald

Rutgers University

Research output: Contribution to journal › Conference article › peer-review

20 Citations (Scopus)

Abstract

Authors have employed Rutherford backscatting/channeling and transmission electron microscopy to study the epitaxial growth of BaF//2 vacuum deposited onto (100) and (111) surfaces of InP and Ge. They observed no epitaxy in BaF//2 on Ge(100), and only poor quality growth on InP(111). Both the BaF//2/InP(100) and BaF//2/Ge(111) systems show excellent epitaxy. For these latter two cases the epitaxial quality depends strongly on substrate temperature. Even though a large lattice mismatch exists TEM analysis indicates that for BaF//2/Ge(111) neither are there misfit dislocations at the interface nor is the structure coherent.

Original language	English
Pages (from-to)	246-249
Number of pages	4
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	1
Issue number	2
DOIs	https://doi.org/10.1116/1.582495
Publication status	Published - 1982
Event	Proc of the Int Conf on Metastable and Modulated Semicond Struct - Pasadena, CA, USA Duration: Dec 6 1982 → Dec 10 1982

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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RUTHERFORD BACKSCATTERING/CHANNELING AND TRANSMISSION ELECTRON MICROSCOPY ANALYSIS OF EPITAXIAL BaF₂ FILMS ON Ge AND InP. / Phillips, J. M.; Feldman, L. C.; Gibson, J. M.; McDonald, M. L.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 1, No. 2, 1982, p. 246-249.

Research output: Contribution to journal › Conference article › peer-review

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abstract = "Authors have employed Rutherford backscatting/channeling and transmission electron microscopy to study the epitaxial growth of BaF//2 vacuum deposited onto (100) and (111) surfaces of InP and Ge. They observed no epitaxy in BaF//2 on Ge(100), and only poor quality growth on InP(111). Both the BaF//2/InP(100) and BaF//2/Ge(111) systems show excellent epitaxy. For these latter two cases the epitaxial quality depends strongly on substrate temperature. Even though a large lattice mismatch exists TEM analysis indicates that for BaF//2/Ge(111) neither are there misfit dislocations at the interface nor is the structure coherent.",

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AB - Authors have employed Rutherford backscatting/channeling and transmission electron microscopy to study the epitaxial growth of BaF//2 vacuum deposited onto (100) and (111) surfaces of InP and Ge. They observed no epitaxy in BaF//2 on Ge(100), and only poor quality growth on InP(111). Both the BaF//2/InP(100) and BaF//2/Ge(111) systems show excellent epitaxy. For these latter two cases the epitaxial quality depends strongly on substrate temperature. Even though a large lattice mismatch exists TEM analysis indicates that for BaF//2/Ge(111) neither are there misfit dislocations at the interface nor is the structure coherent.

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