Abstract
Authors have employed Rutherford backscatting/channeling and transmission electron microscopy to study the epitaxial growth of BaF//2 vacuum deposited onto (100) and (111) surfaces of InP and Ge. They observed no epitaxy in BaF//2 on Ge(100), and only poor quality growth on InP(111). Both the BaF//2/InP(100) and BaF//2/Ge(111) systems show excellent epitaxy. For these latter two cases the epitaxial quality depends strongly on substrate temperature. Even though a large lattice mismatch exists TEM analysis indicates that for BaF//2/Ge(111) neither are there misfit dislocations at the interface nor is the structure coherent.
| Original language | English |
|---|---|
| Pages (from-to) | 246-249 |
| Number of pages | 4 |
| Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
| Volume | 1 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - Jan 1 1982 |
| Event | Proc of the Int Conf on Metastable and Modulated Semicond Struct - Pasadena, CA, USA Duration: Dec 6 1982 → Dec 10 1982 |
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering
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Cite this
Phillips, J. M., Feldman, L. C., Gibson, J. M., & McDonald, M. L. (1982). RUTHERFORD BACKSCATTERING/CHANNELING AND TRANSMISSION ELECTRON MICROSCOPY ANALYSIS OF EPITAXIAL BaF2 FILMS ON Ge AND InP. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 1(2), 246-249. https://doi.org/10.1116/1.582495