RUTHERFORD BACKSCATTERING/CHANNELING AND TRANSMISSION ELECTRON MICROSCOPY ANALYSIS OF EPITAXIAL BaF//2 FILMS ON Ge AND InP.

Authors have employed Rutherford backscatting/channeling and transmission electron microscopy to study the epitaxial growth of BaF//2 vacuum deposited onto (100) and (111) surfaces of InP and Ge. They observed no epitaxy in BaF//2 on Ge(100), and only poor quality growth on InP(111). Both the BaF//2/InP(100) and BaF//2/Ge(111) systems show excellent epitaxy. For these latter two cases the epitaxial quality depends strongly on substrate temperature. Even though a large lattice mismatch exists TEM analysis indicates that for BaF//2/Ge(111) neither are there misfit dislocations at the interface nor is the structure coherent.