Abstract
The main concepts in ion scattering analysis of interfaces are reviewed and relevant literature is cited.
| Original language | English |
|---|---|
| Pages (from-to) | 3-6 |
| Number of pages | 4 |
| Journal | Thin Solid Films |
| Volume | 104 |
| Issue number | 1-2 |
| DOIs | |
| Publication status | Published - Jun 17 1983 |
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ASJC Scopus subject areas
- Surfaces, Coatings and Films
- Condensed Matter Physics
- Surfaces and Interfaces
Cite this
Rutherford scattering-channeling analysis of semiconductor interfaces. / Feldman, Leonard C.
In: Thin Solid Films, Vol. 104, No. 1-2, 17.06.1983, p. 3-6.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Rutherford scattering-channeling analysis of semiconductor interfaces
AU - Feldman, Leonard C
PY - 1983/6/17
Y1 - 1983/6/17
N2 - The main concepts in ion scattering analysis of interfaces are reviewed and relevant literature is cited.
AB - The main concepts in ion scattering analysis of interfaces are reviewed and relevant literature is cited.
UR - http://www.scopus.com/inward/record.url?scp=0020138652&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0020138652&partnerID=8YFLogxK
U2 - 10.1016/0040-6090(83)90541-2
DO - 10.1016/0040-6090(83)90541-2
M3 - Article
AN - SCOPUS:0020138652
VL - 104
SP - 3
EP - 6
JO - Thin Solid Films
JF - Thin Solid Films
SN - 0040-6090
IS - 1-2
ER -