Abstract
High energy ion scattering has played an important role in the evolving understanding of semiconductor interfaces. A number of extensive reviews describe the fundamentals of this technique and its application to the study of semiconductor interfaces. The main purpose of this paper is to provide the reader with a guide to the existing literature on the subject. The main concepts in ion scattering analysis of interfaces are reviewed and relevant literature is cited.
| Original language | English |
|---|---|
| Title of host publication | Proceedings of SPIE - The International Society for Optical Engineering |
| Editors | Fred H. Pollak, Robert S. Bauer |
| Publisher | SPIE |
| Pages | 192-194 |
| Number of pages | 3 |
| Volume | 452 |
| ISBN (Print) | 0892524871 |
| Publication status | Published - 1984 |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Condensed Matter Physics
Cite this
RUTHERFORD SCATTERING-CHANNELING ANALYSIS OF SEMICONDUCTOR STRUCTURES. / Feldman, Leonard C.
Proceedings of SPIE - The International Society for Optical Engineering. ed. / Fred H. Pollak; Robert S. Bauer. Vol. 452 SPIE, 1984. p. 192-194.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - RUTHERFORD SCATTERING-CHANNELING ANALYSIS OF SEMICONDUCTOR STRUCTURES.
AU - Feldman, Leonard C
PY - 1984
Y1 - 1984
N2 - High energy ion scattering has played an important role in the evolving understanding of semiconductor interfaces. A number of extensive reviews describe the fundamentals of this technique and its application to the study of semiconductor interfaces. The main purpose of this paper is to provide the reader with a guide to the existing literature on the subject. The main concepts in ion scattering analysis of interfaces are reviewed and relevant literature is cited.
AB - High energy ion scattering has played an important role in the evolving understanding of semiconductor interfaces. A number of extensive reviews describe the fundamentals of this technique and its application to the study of semiconductor interfaces. The main purpose of this paper is to provide the reader with a guide to the existing literature on the subject. The main concepts in ion scattering analysis of interfaces are reviewed and relevant literature is cited.
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M3 - Conference contribution
SN - 0892524871
VL - 452
SP - 192
EP - 194
BT - Proceedings of SPIE - The International Society for Optical Engineering
A2 - Pollak, Fred H.
A2 - Bauer, Robert S.
PB - SPIE
ER -