RUTHERFORD SCATTERING-CHANNELING ANALYSIS OF SEMICONDUCTOR STRUCTURES.

Leonard C Feldman

RUTHERFORD SCATTERING-CHANNELING ANALYSIS OF SEMICONDUCTOR STRUCTURES.

Rutgers University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

High energy ion scattering has played an important role in the evolving understanding of semiconductor interfaces. A number of extensive reviews describe the fundamentals of this technique and its application to the study of semiconductor interfaces. The main purpose of this paper is to provide the reader with a guide to the existing literature on the subject. The main concepts in ion scattering analysis of interfaces are reviewed and relevant literature is cited.

Original language	English
Title of host publication	Proceedings of SPIE - The International Society for Optical Engineering
Editors	Fred H. Pollak, Robert S. Bauer
Publisher	SPIE
Pages	192-194
Number of pages	3
Volume	452
ISBN (Print)	0892524871
Publication status	Published - 1984

ASJC Scopus subject areas

Electrical and Electronic Engineering
Condensed Matter Physics

Fingerprint Dive into the research topics of 'RUTHERFORD SCATTERING-CHANNELING ANALYSIS OF SEMICONDUCTOR STRUCTURES.'. Together they form a unique fingerprint.

Cite this

@inproceedings{842fa36839e14079b2b489eb38addc09,

title = "RUTHERFORD SCATTERING-CHANNELING ANALYSIS OF SEMICONDUCTOR STRUCTURES.",

abstract = "High energy ion scattering has played an important role in the evolving understanding of semiconductor interfaces. A number of extensive reviews describe the fundamentals of this technique and its application to the study of semiconductor interfaces. The main purpose of this paper is to provide the reader with a guide to the existing literature on the subject. The main concepts in ion scattering analysis of interfaces are reviewed and relevant literature is cited.",

author = "Feldman, {Leonard C}",

year = "1984",

language = "English",

isbn = "0892524871",

volume = "452",

pages = "192--194",

editor = "Pollak, {Fred H.} and Bauer, {Robert S.}",

booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",

publisher = "SPIE",

}

TY - GEN

T1 - RUTHERFORD SCATTERING-CHANNELING ANALYSIS OF SEMICONDUCTOR STRUCTURES.

AU - Feldman, Leonard C

PY - 1984

Y1 - 1984

N2 - High energy ion scattering has played an important role in the evolving understanding of semiconductor interfaces. A number of extensive reviews describe the fundamentals of this technique and its application to the study of semiconductor interfaces. The main purpose of this paper is to provide the reader with a guide to the existing literature on the subject. The main concepts in ion scattering analysis of interfaces are reviewed and relevant literature is cited.

AB - High energy ion scattering has played an important role in the evolving understanding of semiconductor interfaces. A number of extensive reviews describe the fundamentals of this technique and its application to the study of semiconductor interfaces. The main purpose of this paper is to provide the reader with a guide to the existing literature on the subject. The main concepts in ion scattering analysis of interfaces are reviewed and relevant literature is cited.

UR - http://www.scopus.com/inward/record.url?scp=0021587911&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0021587911&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0021587911

SN - 0892524871

VL - 452

SP - 192

EP - 194

BT - Proceedings of SPIE - The International Society for Optical Engineering

A2 - Pollak, Fred H.

A2 - Bauer, Robert S.

PB - SPIE

ER -

RUTHERFORD SCATTERING-CHANNELING ANALYSIS OF SEMICONDUCTOR STRUCTURES.

Abstract

ASJC Scopus subject areas

Other files and links

Cite this