RUTHERFORD SCATTERING-CHANNELING ANALYSIS OF SEMICONDUCTOR STRUCTURES.

Leonard C Feldman

RUTHERFORD SCATTERING-CHANNELING ANALYSIS OF SEMICONDUCTOR STRUCTURES.

Rutgers University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

High energy ion scattering has played an important role in the evolving understanding of semiconductor interfaces. A number of extensive reviews describe the fundamentals of this technique and its application to the study of semiconductor interfaces. The main purpose of this paper is to provide the reader with a guide to the existing literature on the subject. The main concepts in ion scattering analysis of interfaces are reviewed and relevant literature is cited.

Original language	English
Title of host publication	Proceedings of SPIE - The International Society for Optical Engineering
Editors	Fred H. Pollak, Robert S. Bauer
Publisher	SPIE
Pages	192-194
Number of pages	3
Volume	452
ISBN (Print)	0892524871
Publication status	Published - 1984

ASJC Scopus subject areas

Electrical and Electronic Engineering
Condensed Matter Physics

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abstract = "High energy ion scattering has played an important role in the evolving understanding of semiconductor interfaces. A number of extensive reviews describe the fundamentals of this technique and its application to the study of semiconductor interfaces. The main purpose of this paper is to provide the reader with a guide to the existing literature on the subject. The main concepts in ion scattering analysis of interfaces are reviewed and relevant literature is cited.",

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