Abstract
High energy ion scattering has played an important role in the evolving understanding of semiconductor interfaces. A number of extensive reviews describe the fundamentals of this technique and its application to the study of semiconductor interfaces. The main purpose of this paper is to provide the reader with a guide to the existing literature on the subject. The main concepts in ion scattering analysis of interfaces are reviewed and relevant literature is cited.
| Original language | English |
|---|---|
| Title of host publication | Proceedings of SPIE - The International Society for Optical Engineering |
| Editors | Fred H. Pollak, Robert S. Bauer |
| Publisher | SPIE |
| Pages | 192-194 |
| Number of pages | 3 |
| Volume | 452 |
| ISBN (Print) | 0892524871 |
| Publication status | Published - 1984 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Condensed Matter Physics
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Cite this
Feldman, L. C. (1984). RUTHERFORD SCATTERING-CHANNELING ANALYSIS OF SEMICONDUCTOR STRUCTURES. In F. H. Pollak, & R. S. Bauer (Eds.), Proceedings of SPIE - The International Society for Optical Engineering (Vol. 452, pp. 192-194). SPIE.