RUTHERFORD SCATTERING-CHANNELING ANALYSIS OF SEMICONDUCTOR STRUCTURES.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

High energy ion scattering has played an important role in the evolving understanding of semiconductor interfaces. A number of extensive reviews describe the fundamentals of this technique and its application to the study of semiconductor interfaces. The main purpose of this paper is to provide the reader with a guide to the existing literature on the subject. The main concepts in ion scattering analysis of interfaces are reviewed and relevant literature is cited.

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsFred H. Pollak, Robert S. Bauer
PublisherSPIE
Pages192-194
Number of pages3
Volume452
ISBN (Print)0892524871
Publication statusPublished - 1984

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

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