Sb-induced passivation of the Si(100) surface

Shaoping Tang, Arthur J Freeman

Research output: Contribution to journalArticle

57 Citations (Scopus)

Abstract

The passivation of the Si(100)(2×1) surface upon chemisorption of Sb is investigated using the first-principles local-density dmol method with analytic gradients and cluster models containing up to 62 atoms. Sb adsorbed on the bridge site of Si(100)(2×1) is found to saturate the dangling bonds of the underlying two dimer atoms, resulting in an unusual chemisorption site for this system. The (2×1) reconstruction is removed when Sb adsorbs on the cave site between two nearest bridge sites of the Si(100)(2×1) surface that are already occupied by Sb atoms. The formation of an Sb dimer is found to be more stable than single atom adsorption; thus Sb dimers are the essential structure on the Si(100) surface. The calculated bond lengths of Sb-Si and Sb-Sb are 2.61 and 2.93 , respectively, in excellent agreement with a recent surface-extended x-ray-absorption fine-structure analysis.

Original languageEnglish
Pages (from-to)1460-1465
Number of pages6
JournalPhysical Review B
Volume47
Issue number3
DOIs
Publication statusPublished - 1993

Fingerprint

Passivation
passivity
Dimers
Atoms
dimers
Chemisorption
chemisorption
atoms
caves
Caves
Dangling bonds
Bond length
x ray absorption
fine structure
Adsorption
X rays
gradients
adsorption

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Sb-induced passivation of the Si(100) surface. / Tang, Shaoping; Freeman, Arthur J.

In: Physical Review B, Vol. 47, No. 3, 1993, p. 1460-1465.

Research output: Contribution to journalArticle

Tang, Shaoping ; Freeman, Arthur J. / Sb-induced passivation of the Si(100) surface. In: Physical Review B. 1993 ; Vol. 47, No. 3. pp. 1460-1465.
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