Scaling between channel mobility and interface state density in SiC MOSFETs

John Rozen, Ayayi C. Ahyi, Xingguang Zhu, John R. Williams, Leonard C Feldman

Research output: Contribution to journalArticle

89 Citations (Scopus)

Abstract

The direct impact of the SiO2/4H-SiC interface state density (Dit) on the channel mobility of lateral field-effect transistors is studied by tailoring the trap distribution via nitridation of the thermal gate oxide. We observe that mobility scales like the inverse of the charged state density, which is consistent with Coulomb-scattering-limited transport at the interface. We also conclude that the Dit further impacts even the best devices by screening the gate potential, yielding small subthreshold swings and poor turn-ON characteristics.

Original languageEnglish
Article number6026921
Pages (from-to)3808-3811
Number of pages4
JournalIEEE Transactions on Electron Devices
Volume58
Issue number11
DOIs
Publication statusPublished - Nov 2011

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Nitridation
Interface states
Field effect transistors
Oxides
Screening
Scattering
Hot Temperature

Keywords

  • Charge carrier mobility
  • interface state density
  • MOS devices
  • nitrogen incorporation
  • semiconductor-insulator interfaces
  • silicon carbide

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Scaling between channel mobility and interface state density in SiC MOSFETs. / Rozen, John; Ahyi, Ayayi C.; Zhu, Xingguang; Williams, John R.; Feldman, Leonard C.

In: IEEE Transactions on Electron Devices, Vol. 58, No. 11, 6026921, 11.2011, p. 3808-3811.

Research output: Contribution to journalArticle

Rozen, John ; Ahyi, Ayayi C. ; Zhu, Xingguang ; Williams, John R. ; Feldman, Leonard C. / Scaling between channel mobility and interface state density in SiC MOSFETs. In: IEEE Transactions on Electron Devices. 2011 ; Vol. 58, No. 11. pp. 3808-3811.
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