Scaling between channel mobility and interface state density in SiC MOSFETs

John Rozen, Ayayi C. Ahyi, Xingguang Zhu, John R. Williams, Leonard C. Feldman

Research output: Contribution to journalArticlepeer-review

100 Citations (Scopus)


The direct impact of the SiO2/4H-SiC interface state density (Dit) on the channel mobility of lateral field-effect transistors is studied by tailoring the trap distribution via nitridation of the thermal gate oxide. We observe that mobility scales like the inverse of the charged state density, which is consistent with Coulomb-scattering-limited transport at the interface. We also conclude that the Dit further impacts even the best devices by screening the gate potential, yielding small subthreshold swings and poor turn-ON characteristics.

Original languageEnglish
Article number6026921
Pages (from-to)3808-3811
Number of pages4
JournalIEEE Transactions on Electron Devices
Issue number11
Publication statusPublished - Nov 2011


  • Charge carrier mobility
  • MOS devices
  • interface state density
  • nitrogen incorporation
  • semiconductor-insulator interfaces
  • silicon carbide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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