Scanning tunneling microscopy assisted oxide surface etching

D. Saulys, G. Rudd, Eric Garfunkel

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

A scanning tunneling microscope (STM) is used to image the surface of and to etch defects on a quasi-two-dimensional conducting oxide, Na 0.9Mo6O17. The surface defects (pits) are produced by briefly increasing the bias voltage or current between the tip and sample. The pits expand and change with time into either faceted or rounded shapes. These changes are strongly accentuated by the STM imaging process. We discuss explanations to account for the defect creation and STM-assisted surface etching processes.

Original languageEnglish
Pages (from-to)1707-1711
Number of pages5
JournalJournal of Applied Physics
Volume69
Issue number3
DOIs
Publication statusPublished - 1991

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scanning tunneling microscopy
microscopes
etching
scanning
oxides
defects
surface defects
conduction
electric potential

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Scanning tunneling microscopy assisted oxide surface etching. / Saulys, D.; Rudd, G.; Garfunkel, Eric.

In: Journal of Applied Physics, Vol. 69, No. 3, 1991, p. 1707-1711.

Research output: Contribution to journalArticle

Saulys, D. ; Rudd, G. ; Garfunkel, Eric. / Scanning tunneling microscopy assisted oxide surface etching. In: Journal of Applied Physics. 1991 ; Vol. 69, No. 3. pp. 1707-1711.
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