Scanning tunneling microscopy of defect states in the semiconductor Bi2Se3

S. Urazhdin, D. Bilc, S. H. Tessmer, S. D. Mahanti, Theodora Kyratsi, M. G. Kanatzidis

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Abstract

Scanning tunneling spectroscopy images of Bi2Se3 doped with excess Bi reveal electronic defect states with a striking shape resembling clover leaves. With a simple tight-binding model, we show that the geometry of the defect states in Bi2Se3 can be directly related to the position of the originating impurities. Only the Bi defects at the Se sites five atomic layers below the surface are experimentally observed. We show that this effect can be explained by the interplay of defect and surface electronic structure.

Original languageEnglish
Article number161306
Pages (from-to)1613061-1613064
Number of pages4
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume66
Issue number16
Publication statusPublished - Oct 15 2002

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Urazhdin, S., Bilc, D., Tessmer, S. H., Mahanti, S. D., Kyratsi, T., & Kanatzidis, M. G. (2002). Scanning tunneling microscopy of defect states in the semiconductor Bi2Se3. Physical Review B - Condensed Matter and Materials Physics, 66(16), 1613061-1613064. [161306].