Scanning tunneling microscopy of defect states in the semiconductor (formula presented)

S. Urazhdin, D. Bilc, S. H. Tessmer, S. D. Mahanti, Theodora Kyratsi, Mercouri G Kanatzidis

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Scanning tunneling spectroscopy images of (formula presented) doped with excess Bi reveal electronic defect states with a striking shape resembling clover leaves. With a simple tight-binding model, we show that the geometry of the defect states in (formula presented) can be directly related to the position of the originating impurities. Only the Bi defects at the Se sites five atomic layers below the surface are experimentally observed. We show that this effect can be explained by the interplay of defect and surface electronic structure.

Original languageEnglish
Pages (from-to)1-4
Number of pages4
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume66
Issue number16
DOIs
Publication statusPublished - Jan 1 2002

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Scanning tunneling microscopy
scanning tunneling microscopy
Semiconductor materials
Defects
defects
leaves
Electronic structure
Spectroscopy
Impurities
electronic structure
Scanning
impurities
scanning
Geometry
geometry
electronics
spectroscopy

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Scanning tunneling microscopy of defect states in the semiconductor (formula presented). / Urazhdin, S.; Bilc, D.; Tessmer, S. H.; Mahanti, S. D.; Kyratsi, Theodora; Kanatzidis, Mercouri G.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 66, No. 16, 01.01.2002, p. 1-4.

Research output: Contribution to journalArticle

Urazhdin, S. ; Bilc, D. ; Tessmer, S. H. ; Mahanti, S. D. ; Kyratsi, Theodora ; Kanatzidis, Mercouri G. / Scanning tunneling microscopy of defect states in the semiconductor (formula presented). In: Physical Review B - Condensed Matter and Materials Physics. 2002 ; Vol. 66, No. 16. pp. 1-4.
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