Scanning tunneling spectroscopy of methyl- and ethyl-terminated Si(111) surfaces

Hongbin Yu, Lauren J. Webb, James R. Heath, Nathan S Lewis

Research output: Contribution to journalArticle

40 Citations (Scopus)

Abstract

Methyl- and ethyl-terminated Si(111) surfaces prepared by a two-step chlorination/alkylation method were characterized by low temperature scanning tunneling spectroscopy (STS), The STS data showed remarkably low levels of midgap states on the CH 3- and C 2H 5-terminated Si surfaces. A large conductance gap relative to the Si band gap was observed for both surfaces as well as for the hydrogen-terminated Si(111) surface. This large gap is ascribed to scanning tunneling microscope tip-induced band bending resulting from a low density of midgap states which avoid pinning of the Fermi levels on these passivated surfaces.

Original languageEnglish
Article number252111
JournalApplied Physics Letters
Volume88
Issue number25
DOIs
Publication statusPublished - Jun 19 2006

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scanning
spectroscopy
chlorination
alkylation
microscopes
methylidyne
hydrogen

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Scanning tunneling spectroscopy of methyl- and ethyl-terminated Si(111) surfaces. / Yu, Hongbin; Webb, Lauren J.; Heath, James R.; Lewis, Nathan S.

In: Applied Physics Letters, Vol. 88, No. 25, 252111, 19.06.2006.

Research output: Contribution to journalArticle

Yu, Hongbin ; Webb, Lauren J. ; Heath, James R. ; Lewis, Nathan S. / Scanning tunneling spectroscopy of methyl- and ethyl-terminated Si(111) surfaces. In: Applied Physics Letters. 2006 ; Vol. 88, No. 25.
@article{34c5b31c387a4545968274c69f14583b,
title = "Scanning tunneling spectroscopy of methyl- and ethyl-terminated Si(111) surfaces",
abstract = "Methyl- and ethyl-terminated Si(111) surfaces prepared by a two-step chlorination/alkylation method were characterized by low temperature scanning tunneling spectroscopy (STS), The STS data showed remarkably low levels of midgap states on the CH 3- and C 2H 5-terminated Si surfaces. A large conductance gap relative to the Si band gap was observed for both surfaces as well as for the hydrogen-terminated Si(111) surface. This large gap is ascribed to scanning tunneling microscope tip-induced band bending resulting from a low density of midgap states which avoid pinning of the Fermi levels on these passivated surfaces.",
author = "Hongbin Yu and Webb, {Lauren J.} and Heath, {James R.} and Lewis, {Nathan S}",
year = "2006",
month = "6",
day = "19",
doi = "10.1063/1.2203968",
language = "English",
volume = "88",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "25",

}

TY - JOUR

T1 - Scanning tunneling spectroscopy of methyl- and ethyl-terminated Si(111) surfaces

AU - Yu, Hongbin

AU - Webb, Lauren J.

AU - Heath, James R.

AU - Lewis, Nathan S

PY - 2006/6/19

Y1 - 2006/6/19

N2 - Methyl- and ethyl-terminated Si(111) surfaces prepared by a two-step chlorination/alkylation method were characterized by low temperature scanning tunneling spectroscopy (STS), The STS data showed remarkably low levels of midgap states on the CH 3- and C 2H 5-terminated Si surfaces. A large conductance gap relative to the Si band gap was observed for both surfaces as well as for the hydrogen-terminated Si(111) surface. This large gap is ascribed to scanning tunneling microscope tip-induced band bending resulting from a low density of midgap states which avoid pinning of the Fermi levels on these passivated surfaces.

AB - Methyl- and ethyl-terminated Si(111) surfaces prepared by a two-step chlorination/alkylation method were characterized by low temperature scanning tunneling spectroscopy (STS), The STS data showed remarkably low levels of midgap states on the CH 3- and C 2H 5-terminated Si surfaces. A large conductance gap relative to the Si band gap was observed for both surfaces as well as for the hydrogen-terminated Si(111) surface. This large gap is ascribed to scanning tunneling microscope tip-induced band bending resulting from a low density of midgap states which avoid pinning of the Fermi levels on these passivated surfaces.

UR - http://www.scopus.com/inward/record.url?scp=33745472378&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33745472378&partnerID=8YFLogxK

U2 - 10.1063/1.2203968

DO - 10.1063/1.2203968

M3 - Article

VL - 88

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 25

M1 - 252111

ER -