Abstract
The study of Schottky barriers at metal-finite semiconducting carbon nanotube (CNT) interfaces based on tight-binding theory, was presented. The electronic properties of CNT were studied as a function of CNT length. It was observed that the shape of potential barrier depended on the long-range charge transfer tail.
| Original language | English |
|---|---|
| Pages (from-to) | 2429-2431 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 83 |
| Issue number | 12 |
| DOIs | |
| Publication status | Published - Sep 22 2003 |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
Schottky barriers at metal-finite semiconducting carbon nanotube interfaces. / Xue, Yongqiang; Ratner, Mark A.
In: Applied Physics Letters, Vol. 83, No. 12, 22.09.2003, p. 2429-2431.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Schottky barriers at metal-finite semiconducting carbon nanotube interfaces
AU - Xue, Yongqiang
AU - Ratner, Mark A
PY - 2003/9/22
Y1 - 2003/9/22
N2 - The study of Schottky barriers at metal-finite semiconducting carbon nanotube (CNT) interfaces based on tight-binding theory, was presented. The electronic properties of CNT were studied as a function of CNT length. It was observed that the shape of potential barrier depended on the long-range charge transfer tail.
AB - The study of Schottky barriers at metal-finite semiconducting carbon nanotube (CNT) interfaces based on tight-binding theory, was presented. The electronic properties of CNT were studied as a function of CNT length. It was observed that the shape of potential barrier depended on the long-range charge transfer tail.
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UR - http://www.scopus.com/inward/citedby.url?scp=0142121661&partnerID=8YFLogxK
U2 - 10.1063/1.1613355
DO - 10.1063/1.1613355
M3 - Article
AN - SCOPUS:0142121661
VL - 83
SP - 2429
EP - 2431
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 12
ER -