Schottky barriers at metal-finite semiconducting carbon nanotube interfaces

Yongqiang Xue, Mark A Ratner

Research output: Contribution to journalArticle

28 Citations (Scopus)

Abstract

The study of Schottky barriers at metal-finite semiconducting carbon nanotube (CNT) interfaces based on tight-binding theory, was presented. The electronic properties of CNT were studied as a function of CNT length. It was observed that the shape of potential barrier depended on the long-range charge transfer tail.

Original languageEnglish
Pages (from-to)2429-2431
Number of pages3
JournalApplied Physics Letters
Volume83
Issue number12
DOIs
Publication statusPublished - Sep 22 2003

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carbon nanotubes
metals
charge transfer
electronics

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Schottky barriers at metal-finite semiconducting carbon nanotube interfaces. / Xue, Yongqiang; Ratner, Mark A.

In: Applied Physics Letters, Vol. 83, No. 12, 22.09.2003, p. 2429-2431.

Research output: Contribution to journalArticle

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