Schottky barriers at metal-finite semiconducting carbon nanotube interfaces

Yongqiang Xue; Mark A. Ratner

doi:10.1063/1.1613355

Schottky barriers at metal-finite semiconducting carbon nanotube interfaces

Yongqiang Xue, Mark A. Ratner

Northwestern University

Research output: Contribution to journal › Article

28 Citations (Scopus)

Abstract

The study of Schottky barriers at metal-finite semiconducting carbon nanotube (CNT) interfaces based on tight-binding theory, was presented. The electronic properties of CNT were studied as a function of CNT length. It was observed that the shape of potential barrier depended on the long-range charge transfer tail.

Original language	English
Pages (from-to)	2429-2431
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	12
DOIs	https://doi.org/10.1063/1.1613355
Publication status	Published - Sep 22 2003

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ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Cite this

Xue, Y., & Ratner, M. A. (2003). Schottky barriers at metal-finite semiconducting carbon nanotube interfaces. Applied Physics Letters, 83(12), 2429-2431. https://doi.org/10.1063/1.1613355

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10.1063/1.1613355