Abstract
The study of Schottky barriers at metal-finite semiconducting carbon nanotube (CNT) interfaces based on tight-binding theory, was presented. The electronic properties of CNT were studied as a function of CNT length. It was observed that the shape of potential barrier depended on the long-range charge transfer tail.
| Original language | English |
|---|---|
| Pages (from-to) | 2429-2431 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 83 |
| Issue number | 12 |
| DOIs | |
| Publication status | Published - Sep 22 2003 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
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Cite this
Xue, Y., & Ratner, M. A. (2003). Schottky barriers at metal-finite semiconducting carbon nanotube interfaces. Applied Physics Letters, 83(12), 2429-2431. https://doi.org/10.1063/1.1613355