Abstract
The compound types A1+xM3-2xBi7+xSe14, A1-xM3-xBi11+xSe20, A1-xM4-xBi11+xSe21 and A1-xM5-xBi11+xSe22 (A = K, Rb, Cs; M = Sn, Pb) form from reactions involving A2Se, Bi2Se3,M and Se. The single crystal structures reveal that they are all structurally related so that they all belong to the homologous series Am[M6Se8]m[M5+nSe9+n ] (M = di- and trivalent metal), whose characteristics are three-dimensional anionic frameworks with tunnels filled with alkali ions. The building units that make up these structures are derived from different sections of the NaCl lattice. In these structures, the Bi and Sn (Pb) atoms are extensively disordered over the metal sites of the chalcogenide network, giving rise to very low thermal conductivity. These phases are all narrow gap semiconductors with 0.25 <Eg <0.60 eV and many possess physico-chemical and charge transport properties suitable for thermoelectric investigations.
Original language | English |
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Title of host publication | Materials Research Society Symposium - Proceedings |
Pages | 101-112 |
Number of pages | 12 |
Volume | 691 |
Publication status | Published - 2002 |
Event | Thermoelectric Materials 2001-Research and Applications - Boston, MA, United States Duration: Nov 26 2001 → Nov 29 2001 |
Other
Other | Thermoelectric Materials 2001-Research and Applications |
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Country | United States |
City | Boston, MA |
Period | 11/26/01 → 11/29/01 |
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ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
Cite this
Search for new thermoelectric materials through exploratory solid state chemistry. / Mrotzek, Antje; Hogan, Tim; Kanatzidis, Mercouri G.
Materials Research Society Symposium - Proceedings. Vol. 691 2002. p. 101-112.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Search for new thermoelectric materials through exploratory solid state chemistry
AU - Mrotzek, Antje
AU - Hogan, Tim
AU - Kanatzidis, Mercouri G
PY - 2002
Y1 - 2002
N2 - The compound types A1+xM3-2xBi7+xSe14, A1-xM3-xBi11+xSe20, A1-xM4-xBi11+xSe21 and A1-xM5-xBi11+xSe22 (A = K, Rb, Cs; M = Sn, Pb) form from reactions involving A2Se, Bi2Se3,M and Se. The single crystal structures reveal that they are all structurally related so that they all belong to the homologous series Am[M6Se8]m[M5+nSe9+n ] (M = di- and trivalent metal), whose characteristics are three-dimensional anionic frameworks with tunnels filled with alkali ions. The building units that make up these structures are derived from different sections of the NaCl lattice. In these structures, the Bi and Sn (Pb) atoms are extensively disordered over the metal sites of the chalcogenide network, giving rise to very low thermal conductivity. These phases are all narrow gap semiconductors with 0.25 <Eg <0.60 eV and many possess physico-chemical and charge transport properties suitable for thermoelectric investigations.
AB - The compound types A1+xM3-2xBi7+xSe14, A1-xM3-xBi11+xSe20, A1-xM4-xBi11+xSe21 and A1-xM5-xBi11+xSe22 (A = K, Rb, Cs; M = Sn, Pb) form from reactions involving A2Se, Bi2Se3,M and Se. The single crystal structures reveal that they are all structurally related so that they all belong to the homologous series Am[M6Se8]m[M5+nSe9+n ] (M = di- and trivalent metal), whose characteristics are three-dimensional anionic frameworks with tunnels filled with alkali ions. The building units that make up these structures are derived from different sections of the NaCl lattice. In these structures, the Bi and Sn (Pb) atoms are extensively disordered over the metal sites of the chalcogenide network, giving rise to very low thermal conductivity. These phases are all narrow gap semiconductors with 0.25 <Eg <0.60 eV and many possess physico-chemical and charge transport properties suitable for thermoelectric investigations.
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M3 - Conference contribution
AN - SCOPUS:0036351027
VL - 691
SP - 101
EP - 112
BT - Materials Research Society Symposium - Proceedings
ER -