Secondary ion mass spectrometry of vapor-liquid-solid grown, Au-Catalyzed, Si Wires

Morgan C. Putnam, Michael A. Filler, Brendan M. Kayes, Michael D. Kelzenberg, Yunbin Guan, Nathan S. Lewis, John M. Eiler, Harry A. Atwater

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Knowledge of the catalyst concentration within vapor-liquid-solid (VLS) grown semiconductor wires is needed in order to assess potential limits to electrical and optical device performance imposed by the VLS growth mechanism. We report herein the use of secondary ion mass spectrometry to characterize the Au catalyst concentration within individual, VLS-grown, Si wires. For Si wires grown by chemical vapor deposition from SiCU at 1000 °C, an upper limit on the bulk Au concentration was observed to be 1.7 x 10 16 atoms/cm 3, similar to the thermodynamic equilibrium concentration at the growth temperature. However, a higher concentration of Au was observed on the sidewalls of the wires

Original languageEnglish
Pages (from-to)3109-3113
Number of pages5
JournalNano letters
Issue number10
Publication statusPublished - Oct 1 2008


ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

Cite this

Putnam, M. C., Filler, M. A., Kayes, B. M., Kelzenberg, M. D., Guan, Y., Lewis, N. S., Eiler, J. M., & Atwater, H. A. (2008). Secondary ion mass spectrometry of vapor-liquid-solid grown, Au-Catalyzed, Si Wires. Nano letters, 8(10), 3109-3113.