Abstract
Knowledge of the catalyst concentration within vapor-liquid-solid (VLS) grown semiconductor wires is needed in order to assess potential limits to electrical and optical device performance imposed by the VLS growth mechanism. We report herein the use of secondary ion mass spectrometry to characterize the Au catalyst concentration within individual, VLS-grown, Si wires. For Si wires grown by chemical vapor deposition from SiCU at 1000 °C, an upper limit on the bulk Au concentration was observed to be 1.7 x 10 16 atoms/cm 3, similar to the thermodynamic equilibrium concentration at the growth temperature. However, a higher concentration of Au was observed on the sidewalls of the wires
| Original language | English |
|---|---|
| Pages (from-to) | 3109-3113 |
| Number of pages | 5 |
| Journal | Nano Letters |
| Volume | 8 |
| Issue number | 10 |
| DOIs | |
| Publication status | Published - Oct 2008 |
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ASJC Scopus subject areas
- Condensed Matter Physics
- Bioengineering
- Chemistry(all)
- Materials Science(all)
- Mechanical Engineering
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Secondary ion mass spectrometry of vapor-liquid-solid grown, Au-Catalyzed, Si Wires. / Putnam, Morgan C.; Filler, Michael A.; Kayes, Brendan M.; Kelzenberg, Michael D.; Guan, Yunbin; Lewis, Nathan S; Eiler, John M.; Atwater, Harry A.
In: Nano Letters, Vol. 8, No. 10, 10.2008, p. 3109-3113.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Secondary ion mass spectrometry of vapor-liquid-solid grown, Au-Catalyzed, Si Wires
AU - Putnam, Morgan C.
AU - Filler, Michael A.
AU - Kayes, Brendan M.
AU - Kelzenberg, Michael D.
AU - Guan, Yunbin
AU - Lewis, Nathan S
AU - Eiler, John M.
AU - Atwater, Harry A.
PY - 2008/10
Y1 - 2008/10
N2 - Knowledge of the catalyst concentration within vapor-liquid-solid (VLS) grown semiconductor wires is needed in order to assess potential limits to electrical and optical device performance imposed by the VLS growth mechanism. We report herein the use of secondary ion mass spectrometry to characterize the Au catalyst concentration within individual, VLS-grown, Si wires. For Si wires grown by chemical vapor deposition from SiCU at 1000 °C, an upper limit on the bulk Au concentration was observed to be 1.7 x 10 16 atoms/cm 3, similar to the thermodynamic equilibrium concentration at the growth temperature. However, a higher concentration of Au was observed on the sidewalls of the wires
AB - Knowledge of the catalyst concentration within vapor-liquid-solid (VLS) grown semiconductor wires is needed in order to assess potential limits to electrical and optical device performance imposed by the VLS growth mechanism. We report herein the use of secondary ion mass spectrometry to characterize the Au catalyst concentration within individual, VLS-grown, Si wires. For Si wires grown by chemical vapor deposition from SiCU at 1000 °C, an upper limit on the bulk Au concentration was observed to be 1.7 x 10 16 atoms/cm 3, similar to the thermodynamic equilibrium concentration at the growth temperature. However, a higher concentration of Au was observed on the sidewalls of the wires
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U2 - 10.1021/nl801234y
DO - 10.1021/nl801234y
M3 - Article
VL - 8
SP - 3109
EP - 3113
JO - Nano Letters
JF - Nano Letters
SN - 1530-6984
IS - 10
ER -