Secondary ion mass spectrometry of vapor-liquid-solid grown, Au-Catalyzed, Si Wires

Morgan C. Putnam; Michael A. Filler; Brendan M. Kayes; Michael D. Kelzenberg; Yunbin Guan; Nathan S. Lewis; John M. Eiler; Harry A. Atwater

doi:10.1021/nl801234y

Secondary ion mass spectrometry of vapor-liquid-solid grown, Au-Catalyzed, Si Wires

Morgan C. Putnam, Michael A. Filler, Brendan M. Kayes, Michael D. Kelzenberg, Yunbin Guan, Nathan S. Lewis, John M. Eiler, Harry A. Atwater

California Institute of Technology

Research output: Contribution to journal › Article › peer-review

74 Citations (Scopus)

Abstract

Knowledge of the catalyst concentration within vapor-liquid-solid (VLS) grown semiconductor wires is needed in order to assess potential limits to electrical and optical device performance imposed by the VLS growth mechanism. We report herein the use of secondary ion mass spectrometry to characterize the Au catalyst concentration within individual, VLS-grown, Si wires. For Si wires grown by chemical vapor deposition from SiCU at 1000 °C, an upper limit on the bulk Au concentration was observed to be 1.7 x 10 ¹⁶ atoms/cm ³, similar to the thermodynamic equilibrium concentration at the growth temperature. However, a higher concentration of Au was observed on the sidewalls of the wires

Original language	English
Pages (from-to)	3109-3113
Number of pages	5
Journal	Nano letters
Volume	8
Issue number	10
DOIs	https://doi.org/10.1021/nl801234y
Publication status	Published - Oct 2008

ASJC Scopus subject areas

Bioengineering
Chemistry(all)
Materials Science(all)
Condensed Matter Physics
Mechanical Engineering

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title = "Secondary ion mass spectrometry of vapor-liquid-solid grown, Au-Catalyzed, Si Wires",

abstract = "Knowledge of the catalyst concentration within vapor-liquid-solid (VLS) grown semiconductor wires is needed in order to assess potential limits to electrical and optical device performance imposed by the VLS growth mechanism. We report herein the use of secondary ion mass spectrometry to characterize the Au catalyst concentration within individual, VLS-grown, Si wires. For Si wires grown by chemical vapor deposition from SiCU at 1000 °C, an upper limit on the bulk Au concentration was observed to be 1.7 x 10 16 atoms/cm 3, similar to the thermodynamic equilibrium concentration at the growth temperature. However, a higher concentration of Au was observed on the sidewalls of the wires",

author = "Putnam, {Morgan C.} and Filler, {Michael A.} and Kayes, {Brendan M.} and Kelzenberg, {Michael D.} and Yunbin Guan and Lewis, {Nathan S.} and Eiler, {John M.} and Atwater, {Harry A.}",

year = "2008",

month = oct,

doi = "10.1021/nl801234y",

language = "English",

volume = "8",

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T1 - Secondary ion mass spectrometry of vapor-liquid-solid grown, Au-Catalyzed, Si Wires

AU - Putnam, Morgan C.

AU - Filler, Michael A.

AU - Kayes, Brendan M.

AU - Kelzenberg, Michael D.

AU - Guan, Yunbin

AU - Lewis, Nathan S.

AU - Eiler, John M.

AU - Atwater, Harry A.

PY - 2008/10

Y1 - 2008/10

N2 - Knowledge of the catalyst concentration within vapor-liquid-solid (VLS) grown semiconductor wires is needed in order to assess potential limits to electrical and optical device performance imposed by the VLS growth mechanism. We report herein the use of secondary ion mass spectrometry to characterize the Au catalyst concentration within individual, VLS-grown, Si wires. For Si wires grown by chemical vapor deposition from SiCU at 1000 °C, an upper limit on the bulk Au concentration was observed to be 1.7 x 10 16 atoms/cm 3, similar to the thermodynamic equilibrium concentration at the growth temperature. However, a higher concentration of Au was observed on the sidewalls of the wires

AB - Knowledge of the catalyst concentration within vapor-liquid-solid (VLS) grown semiconductor wires is needed in order to assess potential limits to electrical and optical device performance imposed by the VLS growth mechanism. We report herein the use of secondary ion mass spectrometry to characterize the Au catalyst concentration within individual, VLS-grown, Si wires. For Si wires grown by chemical vapor deposition from SiCU at 1000 °C, an upper limit on the bulk Au concentration was observed to be 1.7 x 10 16 atoms/cm 3, similar to the thermodynamic equilibrium concentration at the growth temperature. However, a higher concentration of Au was observed on the sidewalls of the wires

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Secondary ion mass spectrometry of vapor-liquid-solid grown, Au-Catalyzed, Si Wires

Abstract

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