Seebeck measurements of N-doped diamond thin film

R. Horiuchi, K. Okano, N. Rupesinghe, M. Chhowalla, G. A.J. Amaratunga

Research output: Contribution to journalConference article

4 Citations (Scopus)

Abstract

It was reported that although nitrogen (N) forms either 1.7 or 4.0 eV deep level donor in diamond, these levels do not contribute to the electrical conduction at room temperature. It was also reported that hydrogen (H)-termination of diamond surfaces results in the p-type electrical conduction in CVD diamond, and that this conduction can be diminished by subsequent oxygen (O) treatment. In this paper, the conduction type of N-doped CVD diamond studied through thermoelectric measurements is presented. The measurements of the Seebeck coefficient indicate that: (i) as-grown N-doped CVD diamond shows p-type conduction, (ii) once it is oxidized, it presents n-type electrical conduction with carrier concentrations of about 1018 cm-3. The results suggest the presence of competing bipolar transport between the surface and the bulk in CVD diamond.

Original languageEnglish
Pages (from-to)457-461
Number of pages5
JournalPhysica Status Solidi (A) Applied Research
Volume193
Issue number3
DOIs
Publication statusPublished - Oct 1 2002
Event7th International Workshop on Surface and Bulk Defects in CVD Diamond Films (SBDD) - Diepenbeek-Hassels, Belgium
Duration: Mar 13 2002Mar 15 2002

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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