Seebeck measurements of N-doped diamond thin film

R. Horiuchi, K. Okano, N. Rupesinghe, Manish Chhowalla, G. A J Amaratunga

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

It was reported that although nitrogen (N) forms either 1.7 or 4.0 eV deep level donor in diamond, these levels do not contribute to the electrical conduction at room temperature. It was also reported that hydrogen (H)-termination of diamond surfaces results in the p-type electrical conduction in CVD diamond, and that this conduction can be diminished by subsequent oxygen (O) treatment. In this paper, the conduction type of N-doped CVD diamond studied through thermoelectric measurements is presented. The measurements of the Seebeck coefficient indicate that: (i) as-grown N-doped CVD diamond shows p-type conduction, (ii) once it is oxidized, it presents n-type electrical conduction with carrier concentrations of about 1018 cm-3. The results suggest the presence of competing bipolar transport between the surface and the bulk in CVD diamond.

Original languageEnglish
Pages (from-to)457-461
Number of pages5
JournalPhysica Status Solidi (A) Applied Research
Volume193
Issue number3
DOIs
Publication statusPublished - Oct 2002

Fingerprint

Diamond
Diamond films
Diamonds
diamonds
conduction
Thin films
Chemical vapor deposition
thin films
vapor deposition
Hydrogen
Seebeck coefficient
Seebeck effect
Carrier concentration
Nitrogen
Oxygen
nitrogen
room temperature
oxygen
hydrogen

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

Seebeck measurements of N-doped diamond thin film. / Horiuchi, R.; Okano, K.; Rupesinghe, N.; Chhowalla, Manish; Amaratunga, G. A J.

In: Physica Status Solidi (A) Applied Research, Vol. 193, No. 3, 10.2002, p. 457-461.

Research output: Contribution to journalArticle

Horiuchi, R. ; Okano, K. ; Rupesinghe, N. ; Chhowalla, Manish ; Amaratunga, G. A J. / Seebeck measurements of N-doped diamond thin film. In: Physica Status Solidi (A) Applied Research. 2002 ; Vol. 193, No. 3. pp. 457-461.
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