Selective-area atomic layer epitaxy growth of ZnO features on soft lithography-patterned substrates

M. Yan, Y. Koide, J. R. Babcock, P. R. Markworth, J. A. Belot, Tobin J Marks, Robert P. H. Chang

Research output: Contribution to journalArticle

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Abstract

Templated ZnO thin-film growth from the vapor phase is achieved on docosyltrichlorosilane-patterned Si substrates using atomic layer epitaxy (ALE) combined with soft lithography. Patterned hydrophobic self-assembled monolayers (SAMs) are first transferred to single-crystal Si surfaces by hot microcontact printing. Using diethylzinc and water as ALE precursors, crystalline ZnO layers are then grown selectively on the SAM-free surface regions where native hydroxy groups nucleate growth from the vapor phase. High-resolution ZnO patterns with 1.0-40 μm feature sizes are readily achieved, demonstrating that soft lithography combined with ALE is a simple and promising methodology for selective area in situ vapor phase fabrication of patterned oxide thin films.

Original languageEnglish
Pages (from-to)1709-1711
Number of pages3
JournalApplied Physics Letters
Volume79
Issue number11
DOIs
Publication statusPublished - Sep 10 2001

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atomic layer epitaxy
lithography
vapor phases
thin films
crystal surfaces
printing
methodology
fabrication
oxides
high resolution
single crystals
water

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Selective-area atomic layer epitaxy growth of ZnO features on soft lithography-patterned substrates. / Yan, M.; Koide, Y.; Babcock, J. R.; Markworth, P. R.; Belot, J. A.; Marks, Tobin J; Chang, Robert P. H.

In: Applied Physics Letters, Vol. 79, No. 11, 10.09.2001, p. 1709-1711.

Research output: Contribution to journalArticle

Yan, M. ; Koide, Y. ; Babcock, J. R. ; Markworth, P. R. ; Belot, J. A. ; Marks, Tobin J ; Chang, Robert P. H. / Selective-area atomic layer epitaxy growth of ZnO features on soft lithography-patterned substrates. In: Applied Physics Letters. 2001 ; Vol. 79, No. 11. pp. 1709-1711.
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