Abstract
Templated ZnO thin-film growth from the vapor phase is achieved on docosyltrichlorosilane-patterned Si substrates using atomic layer epitaxy (ALE) combined with soft lithography. Patterned hydrophobic self-assembled monolayers (SAMs) are first transferred to single-crystal Si surfaces by hot microcontact printing. Using diethylzinc and water as ALE precursors, crystalline ZnO layers are then grown selectively on the SAM-free surface regions where native hydroxy groups nucleate growth from the vapor phase. High-resolution ZnO patterns with 1.0-40 μm feature sizes are readily achieved, demonstrating that soft lithography combined with ALE is a simple and promising methodology for selective area in situ vapor phase fabrication of patterned oxide thin films.
| Original language | English |
|---|---|
| Pages (from-to) | 1709-1711 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 79 |
| Issue number | 11 |
| DOIs | |
| Publication status | Published - Sep 10 2001 |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
Selective-area atomic layer epitaxy growth of ZnO features on soft lithography-patterned substrates. / Yan, M.; Koide, Y.; Babcock, J. R.; Markworth, P. R.; Belot, J. A.; Marks, Tobin J; Chang, Robert P. H.
In: Applied Physics Letters, Vol. 79, No. 11, 10.09.2001, p. 1709-1711.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Selective-area atomic layer epitaxy growth of ZnO features on soft lithography-patterned substrates
AU - Yan, M.
AU - Koide, Y.
AU - Babcock, J. R.
AU - Markworth, P. R.
AU - Belot, J. A.
AU - Marks, Tobin J
AU - Chang, Robert P. H.
PY - 2001/9/10
Y1 - 2001/9/10
N2 - Templated ZnO thin-film growth from the vapor phase is achieved on docosyltrichlorosilane-patterned Si substrates using atomic layer epitaxy (ALE) combined with soft lithography. Patterned hydrophobic self-assembled monolayers (SAMs) are first transferred to single-crystal Si surfaces by hot microcontact printing. Using diethylzinc and water as ALE precursors, crystalline ZnO layers are then grown selectively on the SAM-free surface regions where native hydroxy groups nucleate growth from the vapor phase. High-resolution ZnO patterns with 1.0-40 μm feature sizes are readily achieved, demonstrating that soft lithography combined with ALE is a simple and promising methodology for selective area in situ vapor phase fabrication of patterned oxide thin films.
AB - Templated ZnO thin-film growth from the vapor phase is achieved on docosyltrichlorosilane-patterned Si substrates using atomic layer epitaxy (ALE) combined with soft lithography. Patterned hydrophobic self-assembled monolayers (SAMs) are first transferred to single-crystal Si surfaces by hot microcontact printing. Using diethylzinc and water as ALE precursors, crystalline ZnO layers are then grown selectively on the SAM-free surface regions where native hydroxy groups nucleate growth from the vapor phase. High-resolution ZnO patterns with 1.0-40 μm feature sizes are readily achieved, demonstrating that soft lithography combined with ALE is a simple and promising methodology for selective area in situ vapor phase fabrication of patterned oxide thin films.
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U2 - 10.1063/1.1402959
DO - 10.1063/1.1402959
M3 - Article
VL - 79
SP - 1709
EP - 1711
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 11
ER -