Abstract
Templated ZnO thin-film growth from the vapor phase is achieved on docosyltrichlorosilane-patterned Si substrates using atomic layer epitaxy (ALE) combined with soft lithography. Patterned hydrophobic self-assembled monolayers (SAMs) are first transferred to single-crystal Si surfaces by hot microcontact printing. Using diethylzinc and water as ALE precursors, crystalline ZnO layers are then grown selectively on the SAM-free surface regions where native hydroxy groups nucleate growth from the vapor phase. High-resolution ZnO patterns with 1.0-40 μm feature sizes are readily achieved, demonstrating that soft lithography combined with ALE is a simple and promising methodology for selective area in situ vapor phase fabrication of patterned oxide thin films.
Original language | English |
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Pages (from-to) | 1709-1711 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 79 |
Issue number | 11 |
DOIs | |
Publication status | Published - Sep 10 2001 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)