Abstract
Studies by electron and photon spectroscopy show that plasma grown GaAs oxide possesses an excess amount elemental As at the oxide - GaAs interface. This amount has been found to be inversely proportional to the growth rate. The excess elemental As is deleterious to the electrical properties of MOS devices. A selective plasma oxidation process using fluorinated oxygen gas shows that the excess As at the interface can be greatly reduced. The resultant electrical properties are also improved.
| Original language | English |
|---|---|
| Title of host publication | Proceedings of the Conference on Solid State Devices |
| Publisher | Jpn J of Appl Phys (v 19 Suppl 1 |
| Pages | 483-448 |
| Number of pages | 36 |
| Publication status | Published - 1980 |
ASJC Scopus subject areas
- Engineering(all)