SELECTIVE PLASMA OXIDATION OF GaAs - A STUDY OF THE INTERFACE PROPERTIES.

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Abstract

Studies by electron and photon spectroscopy show that plasma grown GaAs oxide possesses an excess amount elemental As at the oxide - GaAs interface. This amount has been found to be inversely proportional to the growth rate. The excess elemental As is deleterious to the electrical properties of MOS devices. A selective plasma oxidation process using fluorinated oxygen gas shows that the excess As at the interface can be greatly reduced. The resultant electrical properties are also improved.

Original languageEnglish
Title of host publicationProceedings of the Conference on Solid State Devices
PublisherJpn J of Appl Phys (v 19 Suppl 1
Pages483-448
Number of pages36
Publication statusPublished - 1980

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ASJC Scopus subject areas

  • Engineering(all)

Cite this

Chang, R. P. H. (1980). SELECTIVE PLASMA OXIDATION OF GaAs - A STUDY OF THE INTERFACE PROPERTIES. In Proceedings of the Conference on Solid State Devices (pp. 483-448). Jpn J of Appl Phys (v 19 Suppl 1.