Abstract
Studies by electron and photon spectroscopy show that plasma grown GaAs oxide possesses an excess amount elemental As at the oxide—GaAs interface. This amount has been found to be inversely proportional to the growth rate. The excess elemental As is deleterious to the electrical properties of MOS devices. A selective plasma oxidation process using fluorinated oxygen gas shows that the excess As at the interface can be greatly reduced. The resultant electrical properties are also improved.
| Original language | English |
|---|---|
| Pages (from-to) | 483-487 |
| Number of pages | 5 |
| Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
| Volume | 19 |
| DOIs | |
| Publication status | Published - 1980 |
Fingerprint
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)
Cite this
Selective plasma oxidation of GaAs—a study of the interface properties. / Chang, Robert P. H.
In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 19, 1980, p. 483-487.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Selective plasma oxidation of GaAs—a study of the interface properties
AU - Chang, Robert P. H.
PY - 1980
Y1 - 1980
N2 - Studies by electron and photon spectroscopy show that plasma grown GaAs oxide possesses an excess amount elemental As at the oxide—GaAs interface. This amount has been found to be inversely proportional to the growth rate. The excess elemental As is deleterious to the electrical properties of MOS devices. A selective plasma oxidation process using fluorinated oxygen gas shows that the excess As at the interface can be greatly reduced. The resultant electrical properties are also improved.
AB - Studies by electron and photon spectroscopy show that plasma grown GaAs oxide possesses an excess amount elemental As at the oxide—GaAs interface. This amount has been found to be inversely proportional to the growth rate. The excess elemental As is deleterious to the electrical properties of MOS devices. A selective plasma oxidation process using fluorinated oxygen gas shows that the excess As at the interface can be greatly reduced. The resultant electrical properties are also improved.
UR - http://www.scopus.com/inward/record.url?scp=84956253006&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84956253006&partnerID=8YFLogxK
U2 - 10.7567/JJAPS.19S1.483
DO - 10.7567/JJAPS.19S1.483
M3 - Article
AN - SCOPUS:84956253006
VL - 19
SP - 483
EP - 487
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
ER -