Selective plasma oxidation of GaAs—a study of the interface properties

R. P.H. Chang

doi:10.7567/JJAPS.19S1.483

Selective plasma oxidation of GaAs—a study of the interface properties

R. P.H. Chang

Northwestern University

Research output: Contribution to journal › Article

Abstract

Studies by electron and photon spectroscopy show that plasma grown GaAs oxide possesses an excess amount elemental As at the oxide—GaAs interface. This amount has been found to be inversely proportional to the growth rate. The excess elemental As is deleterious to the electrical properties of MOS devices. A selective plasma oxidation process using fluorinated oxygen gas shows that the excess As at the interface can be greatly reduced. The resultant electrical properties are also improved.

Original language	English
Pages (from-to)	483-487
Number of pages	5
Journal	Japanese Journal of Applied Physics
Volume	19
DOIs	https://doi.org/10.7567/JJAPS.19S1.483
Publication status	Published - Jan 1980

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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Chang, R. P. H. (1980). Selective plasma oxidation of GaAs—a study of the interface properties. Japanese Journal of Applied Physics, 19, 483-487. https://doi.org/10.7567/JJAPS.19S1.483

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