Selective plasma oxidation of GaAs—a study of the interface properties

Research output: Contribution to journalArticle

Abstract

Studies by electron and photon spectroscopy show that plasma grown GaAs oxide possesses an excess amount elemental As at the oxide—GaAs interface. This amount has been found to be inversely proportional to the growth rate. The excess elemental As is deleterious to the electrical properties of MOS devices. A selective plasma oxidation process using fluorinated oxygen gas shows that the excess As at the interface can be greatly reduced. The resultant electrical properties are also improved.

Original languageEnglish
Pages (from-to)483-487
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume19
DOIs
Publication statusPublished - 1980

Fingerprint

Electric properties
electrical properties
Plasmas
Oxidation
oxidation
MOS devices
electron spectroscopy
Photons
Spectroscopy
Oxides
Oxygen
oxides
Electrons
photons
oxygen
Gases
gases
spectroscopy

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

@article{4e73570d45d747b08524531f1dd21e79,
title = "Selective plasma oxidation of GaAs—a study of the interface properties",
abstract = "Studies by electron and photon spectroscopy show that plasma grown GaAs oxide possesses an excess amount elemental As at the oxide—GaAs interface. This amount has been found to be inversely proportional to the growth rate. The excess elemental As is deleterious to the electrical properties of MOS devices. A selective plasma oxidation process using fluorinated oxygen gas shows that the excess As at the interface can be greatly reduced. The resultant electrical properties are also improved.",
author = "Chang, {Robert P. H.}",
year = "1980",
doi = "10.7567/JJAPS.19S1.483",
language = "English",
volume = "19",
pages = "483--487",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",

}

TY - JOUR

T1 - Selective plasma oxidation of GaAs—a study of the interface properties

AU - Chang, Robert P. H.

PY - 1980

Y1 - 1980

N2 - Studies by electron and photon spectroscopy show that plasma grown GaAs oxide possesses an excess amount elemental As at the oxide—GaAs interface. This amount has been found to be inversely proportional to the growth rate. The excess elemental As is deleterious to the electrical properties of MOS devices. A selective plasma oxidation process using fluorinated oxygen gas shows that the excess As at the interface can be greatly reduced. The resultant electrical properties are also improved.

AB - Studies by electron and photon spectroscopy show that plasma grown GaAs oxide possesses an excess amount elemental As at the oxide—GaAs interface. This amount has been found to be inversely proportional to the growth rate. The excess elemental As is deleterious to the electrical properties of MOS devices. A selective plasma oxidation process using fluorinated oxygen gas shows that the excess As at the interface can be greatly reduced. The resultant electrical properties are also improved.

UR - http://www.scopus.com/inward/record.url?scp=84956253006&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84956253006&partnerID=8YFLogxK

U2 - 10.7567/JJAPS.19S1.483

DO - 10.7567/JJAPS.19S1.483

M3 - Article

VL - 19

SP - 483

EP - 487

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

ER -